Agnès Tallet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
Abstract: This dosimeter comprises: a transducer material capable, when it is excited by a secondary ionizing radiation, of generating photons or electric charges, an amplifying layer capable, in response to its excitation by the primary ionizing radiation, of generating the secondary ionizing radiation. This amplifying layer comprises a first and a second amplifying sublayer stacked on top of one another. The first and the second amplifying sublayers are composed of at least 70%, by weight, respectively, of at least one first and one second material, the atomic numbers of which are greater than or equal to 29. The atomic number of the first material being less than the atomic number of the second material. The first sublayer is interposed between the second sublayer and the transducer material.
Type:
Grant
Filed:
September 1, 2020
Date of Patent:
February 27, 2024
Assignees:
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, UNIVERSITÉ D'AIX-MARSEILLE, INSTITUT JEAN PAOLI & IRENE CALMETTES CENTRE REGIONAL DE LUTTE CONTRE LE CANCER
Abstract: This dosimeter comprises: a transducer material capable, when it is excited by a secondary ionizing radiation, of generating photons or electric charges, an amplifying layer capable, in response to its excitation by the primary ionizing radiation, of generating the secondary ionizing radiation. This amplifying layer comprises a first and a second amplifying sublayer stacked on top of one another. The first and the second amplifying sublayers are composed of at least 70%, by weight, respectively, of at least one first and one second material, the atomic numbers of which are greater than or equal to 29. The atomic number of the first material being less than the atomic number of the second material. The first sublayer is interposed between the second sublayer and the transducer material.