Abstract: It is known to bring the surface into the inverted state in CCD imaging devices with buried channels during the integration period in order to keep the dark current low (All Gates Pinning). A desired potential profile, with wells in which the charge is integrated bounded by potential barriers, is obtained through, e.g. a doping profile in the channel. Line-shaped constrictions in the thickness or the doping concentration of the well enable charge-reset and function also as an anti-blooming barrier. In a charge coupled device according to the invention, the line-shaped constrictions in the thickness or the doping concentration of the second layer run perpendicular to the length direction of the channel and parallel to the gates and at least one line shaped constriction is positioned below each series of gates. In this way, an increased charge storage capacity and optical sensitivity are obtained while electronic shutter functionality is maintained.