Abstract: Apparatuses, methods, and systems for using a subthreshold voltage for mapping in memory are disclosed. An example apparatus includes a memory array including a plurality of memory cells each programmable to a first data state or a second data state, and circuitry coupled to the memory array and configured to encode an input vector comprising a first number of data states to be programmed to a first group of memory cells of a memory array, apply a subthreshold voltage to each of a second group of memory cells of the memory array, wherein the second group of memory cells is programmed to a weight vector comprising a second number of data states and wherein the subthreshold voltage is based upon the data states of the input vector, and map the input vector to a location in the memory array using the weight vector after applying the subthreshold voltage.

Abstract: Methods, systems, and devices for reading a multi-level memory cell are described. The memory cell may be configured to store three or more logic states. The memory device may apply a first read voltage to a memory cell to determine a logic state stored by the memory cell. The memory device may determine whether a first snapback event occurred and apply a second read voltage based on determining that the first snapback event failed to occur based on applying the first read voltage. The memory device may determine whether a second snapback event occurred and determine the logic state based on whether the first snapback event or the second snapback event occurred.

Abstract: A single memory chip including both memory and storage capabilities on the single chip and accompanying process for forming a memory array including both capabilities is disclosed. In particular, the single chip may incorporate the use of two different chalcogenide materials deposited thereon to implement the memory and storage capabilities. Chalcogenide materials provide flexibility on cell performance, such as by changing the chalcogenide material composition. For the single memory chip, one type of chalcogenide material may be utilized to create memory cells and another type of chalcogenide material may be utilized to create storage cells. The process for forming the memory array includes forming first and second openings in a starting structure and performing a series of etching and deposition steps on the structure to form the memory and storage cells using the two different chalcogenide compositions. The memory and storage cells are independently addressable via wordline and bitline selection.

Abstract: Methods, systems, and devices for cross point array architecture for multiple decks are described. A memory array may include multiple decks, such as six or eight decks. The memory array may also include sockets for coupling access lines with associated decoders. The sockets may be included in sub-blocks of the array. A sub-block may be configured to include sockets for multiple access lines. A socket may intersect an access line in the middle of the access line, or at an end of the access line. Sub-blocks containing sockets for an access line may be separated by a period based on the access line.

Abstract: Methods, systems, and devices for operating memory cell(s) are described. A resistance of a storage element included in a memory cell may be programmed by applying a voltage to the memory cell that causes ion movement within the storage element, where the storage element remains in a single phase and has different resistivity based on a location of the ions within the storage element. In some cases, multiple of such storage elements may be included in a memory cell, where ions within the storage elements respond differently to electric pulses, and a non-binary logic value may be stored in the memory cell by applying a series of voltages or currents to the memory cell.

Abstract: Methods, systems, and devices for techniques to manufacture ferroelectric memory devices are described. In some cases, a memory array may be manufactured using a self-aligned manufacturing technique. For example, a continuous layer of dielectric material may be formed over an assembly which includes an array of transistors coupling contacts on the surface of the assembly with a set of digit lines. In some cases, an array of cavities may be etched into the dielectric material, each cavity exposing a set of contacts. A set of bottom electrodes corresponding to the set of contacts may be formed on sidewalls in each cavity, for example by depositing a layer of electrode material and etching the electrode material using a variety of hard masks.

Abstract: Techniques are provided for programming a self-selecting memory cell that stores a first logic state. To program the memory cell, a pulse having a first polarity may be applied to the cell, which may result in the memory cell having a reduced threshold voltage. During a duration in which the threshold voltage of the memory cell may be reduced (e.g., during a selection time), a second pulse having a second polarity (e.g., a different polarity) may be applied to the memory cell. Applying the second pulse to the memory cell may result in the memory cell storing a second logic state different than the first logic state.

Abstract: Disclosed herein is a memory cell including a memory element and a selector device. Data may be stored in both the memory element and selector device. The memory cell may be programmed by applying write pulses having different polarities and magnitudes. Different polarities of the write pulses may program different logic states into the selector device. Different magnitudes of the write pulses may program different logic states into the memory element. The memory cell may be read by read pulses all having the same polarity. The logic state of the memory cell may be detected by observing different threshold voltages when the read pulses are applied. The different threshold voltages may be responsive to the different polarities and magnitudes of the write pulses.

Abstract: Methods, systems, and devices related to a multi-level self-selecting memory device are described. A self-selecting memory cell may store one or more bits of data represented by different threshold voltages of the self-selecting memory cell. A programming pulse may be varied to establish the different threshold voltages by modifying one or more durations during which a fixed level of voltage or fixed level of current is maintained across the self-selecting memory cell. The self-selecting memory cell may include a chalcogenide alloy. A non-uniform distribution of an element in the chalcogenide alloy may determine a particular threshold voltage of the self-selecting memory cell. The shape of the programming pulse may be configured to modify a distribution of the element in the chalcogenide alloy based on a desired logic state of the self-selecting memory cell.

Abstract: In an example, a memory array may include a plurality of first dielectric materials and a plurality of stacks, where each respective first dielectric material and each respective stack alternate, and where each respective stack comprises a first conductive material and a storage material. A second conductive material may pass through the plurality of first dielectric materials and the plurality of stacks. Each respective stack may further include a second dielectric material between the first conductive material and the second conductive material.

Abstract: Methods, systems, and devices related to techniques to access a self-selecting memory device are described. A self-selecting memory cell may store one or more bits of data represented by different threshold voltages of the self-selecting memory cell. A programming pulse may be varied to establish the different threshold voltages by modifying one or more time durations during which a fixed level of voltage or current is maintained across the self-selecting memory cell. The self-selecting memory cell may include a chalcogenide alloy. A non-uniform distribution of an element in the chalcogenide alloy may determine a particular threshold voltage of the self-selecting memory cell. The shape of the programming pulse may be configured to modify a distribution of the element in the chalcogenide alloy based on a desired logic state of the self-selecting memory cell.

Abstract: Methods, systems, and devices for programming enhancement in memory cells are described. An asymmetrically shaped memory cell may enhance ion crowding at or near a particular electrode, which may be leveraged for accurately reading a stored value of the memory cell. Programming the memory cell may cause elements within the cell to separate, resulting in ion migration towards a particular electrode. The migration may depend on the polarity of the cell and may create a high resistivity region and low resistivity region within the cell. The memory cell may be sensed by applying a voltage across the cell. The resulting current may then encounter the high resistivity region and low resistivity region, and the orientation of the regions may be representative of a first or a second logic state of the cell.

Abstract: Methods, systems, and devices for a vertical memory architecture are described. A memory device may include memory cells arranged in a three-dimensional vertical memory architecture. Each memory cell may include a storage element (e.g., a chalcogenide material), where a logic state may be programmed at the storage element based on a polarity of an applied voltage that exceeds a threshold voltage. The storage element may be coupled with a selection element and a conductive line. The selection element may be coupled with a bit line decoder and a word line decoder via vertical pillars. The selection element may selectively couple the storage element with the bit line decoder. In some examples, an activation voltage for the selection element may be less than a threshold voltage of the storage element.

Abstract: Methods, systems, and devices for techniques for operating a vertical memory architecture are described. A memory device may include memory cells arranged in a three-dimensional vertical memory architecture. Each memory cell may include a storage element (e.g., a chalcogenide material), where a logic state may be programmed at the storage element based on a polarity of an applied voltage that exceeds a threshold voltage. The storage element may be coupled with a selection element and a conductive line. The selection element may be coupled with a bit line decoder and a word line decoder via vertical pillars. The selection element may selectively couple the storage element with the bit line decoder. In some examples, an activation voltage for the selection element may be less than a threshold voltage of the storage element.

Abstract: Methods, systems, and devices for polarity-written cell architectures for a memory device are described. In an example, the described architectures may include memory cells that each include or are otherwise associated with a material configured to store one of a set of logic states based at least in part on a polarity of a write voltage applied to the material. Each of the memory cells may also include a cell selection component configured to selectively couple the material with an access line. In some examples, the material may include a chalcogenide, and the material may be configured to store each of the set of logic states in an amorphous state of the chalcogenide. In various examples, different logic states may be associated with different compositional distributions of the material of a respective memory cell, different threshold characteristics of the material of a respective memory cell, or other characteristics.

Abstract: The present disclosure includes three dimensional memory arrays. An embodiment includes a first plurality of conductive lines separated from one another by an insulation material, a second plurality of conductive lines arranged to extend substantially perpendicular to and pass through the first plurality of conductive lines and the insulation material, and a storage element material formed between the first and second plurality of conductive lines where the second plurality of conductive lines pass through the first plurality of conductive lines. The storage element material is between and in direct contact with a first portion of each respective one of the first plurality of conductive lines and a portion of a first one of the second plurality of conductive lines, and a second portion of each respective one of the first plurality of conductive lines and a portion of a second one of the second plurality of conductive lines.

Abstract: A memory cell design is disclosed. In an embodiment, the memory cell structure includes at least one memory bit layer stacked between top and bottom electrodes. The memory bit layer provides a storage element for a corresponding memory cell. One or more additional conductive layers may be included between the memory bit layer and either, or both, of the top or bottom electrodes to provide a better ohmic contact. In any case, a dielectric liner structure is provided on sidewalls of the memory bit layer. The liner structure includes a dielectric layer, and may also include a second dielectric layer on a first dielectric layer. Either or both first dielectric layer or second dielectric layer comprises a high-k dielectric material. As will be appreciated, the dielectric liner structure effectively protects the memory bit layer from lateral erosion and contamination during the etching of subsequent layers beneath the memory bit layer.

Abstract: Methods, systems, and devices for cross point array architecture for multiple decks are described. A memory array may include multiple decks, such as six or eight decks. The memory array may also include sockets for coupling access lines with associated decoders. The sockets may be included in sub-blocks of the array. A sub-block may be configured to include sockets for multiple access lines. A socket may intersect an access line in the middle of the access line, or at an end of the access line. Sub-blocks containing sockets for an access line may be separated by a period based on the access line.

Abstract: The present disclosure includes three dimensional memory arrays, and methods of processing the same. A number of embodiments include a plurality of conductive lines separated from one other by an insulation material, a plurality of conductive extensions arranged to extend substantially perpendicular to the plurality of conductive lines, and a storage element material formed around each respective one of the plurality of conductive extensions and having two different contacts with each respective one of the plurality of conductive lines, wherein the two different contacts with each respective one of the plurality of conductive lines are at two different ends of that respective conductive line.

Abstract: An example three-dimensional (3-D) memory array includes a first plurality of conductive lines separated from one other by an insulation material, a second plurality of conductive lines, and a plurality of pairs of conductive pillars arranged to extend substantially perpendicular to the first plurality of conductive lines and the second plurality of conductive lines. The conductive pillars of each respective pair are coupled to a same conductive line of the second plurality of conductive lines. A storage element material is formed partially around the conductive pillars of each respective pair.