Patents by Inventor Agus Setiawan

Agus Setiawan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for producing GaN substrate
    Patent number: 7479188
    Abstract: A process for producing an inexpensive large high-quality GaN substrate which comprises forming a MgO buffer layer on a high-quality substrate, generating a ZnO layer on the MgO buffer layer while performing polarity control, growing a GaN layer on the ZnO layer while performing polarity control, and melting the ZnO layer, thereby producing a GaN substrate.
    Type: Grant
    Filed: March 19, 2004
    Date of Patent: January 20, 2009
    Assignee: Tohoku Techno Arch Co., Ltd.
    Inventors: Takafumi Yao, Takuma Suzuki, Hang-ju Ko, Agus Setiawan
  • Process for producing gan substrate
    Publication number: 20060252164
    Abstract: A process for producing an inexpensive large high-quality GaN substrate which comprises forming a MgO buffer layer on a high-quality substrate, generating a ZnO layer on the MgO buffer layer while performing polarity control, growing a GaN layer on the ZnO layer while performing polarity control, and melting the ZnO layer, thereby producing a GaN substrate.
    Type: Application
    Filed: March 19, 2004
    Publication date: November 9, 2006
    Inventors: Takafumi Yao, Takuma Suzuki, Hang-ju Ko, Agus Setiawan