Patents by Inventor Agus Sofian Tjandra
Agus Sofian Tjandra has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230407471Abstract: The present disclosure generally provides methods of providing at least metastable radical molecular species and/or radical atomic species to a processing volume of a process chamber during an electronic device fabrication process, and apparatus related thereto. In one embodiment, the apparatus is a gas injection assembly disposed between a remote plasma source and a process chamber. The gas injection assembly includes a body, a dielectric liner disposed in the body that defines a gas mixing volume, a first flange to couple the gas injection assembly to a process chamber, and a second flange to couple the gas injection assembly to the remote plasma source. The gas injection assembly further includes one or more gas injection ports formed through the body and the liner.Type: ApplicationFiled: June 2, 2023Publication date: December 21, 2023Inventors: Vishwas Kumar PANDEY, Eric Kihara SHONO, Kartik SHAH, Christopher S. OLSEN, Agus Sofian TJANDRA, Tobin KAUFMAN-OSBORN, Taewan KIM, Hansel LO
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Patent number: 11732355Abstract: The present disclosure generally provides methods of providing at least metastable radical molecular species and/or radical atomic species to a processing volume of a process chamber during an electronic device fabrication process, and apparatus related thereto. In one embodiment, the apparatus is a gas injection assembly disposed between a remote plasma source and a process chamber. The gas injection assembly includes a body, a dielectric liner disposed in the body that defines a gas mixing volume, a first flange to couple the gas injection assembly to a process chamber, and a second flange to couple the gas injection assembly to the remote plasma source. The gas injection assembly further includes one or more gas injection ports formed through the body and the liner.Type: GrantFiled: October 24, 2019Date of Patent: August 22, 2023Assignee: Applied Materials, Inc.Inventors: Vishwas Kumar Pandey, Eric Kihara Shono, Kartik Shah, Christopher S. Olsen, Agus Sofian Tjandra, Tobin Kaufman-Osborn, Taewan Kim, Hansel Lo
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Patent number: 11697875Abstract: The present disclosure generally provides methods of providing at least metastable radical molecular species and/or radical atomic species to a processing volume of a process chamber during an electronic device fabrication process, and apparatus related thereto. In one embodiment, the apparatus is a gas injection assembly disposed between a remote plasma source and a process chamber. The gas injection assembly includes a body, a dielectric liner disposed in the body that defines a gas mixing volume, a first flange to couple the gas injection assembly to a process chamber, and a second flange to couple the gas injection assembly to the remote plasma source. The gas injection assembly further includes one or more gas injection ports formed through the body and the liner.Type: GrantFiled: October 24, 2019Date of Patent: July 11, 2023Assignee: Applied Materials, Inc.Inventors: Vishwas Kumar Pandey, Eric Kihara Shono, Kartik Shah, Christopher S. Olsen, Agus Sofian Tjandra, Tobin Kaufman-Osborn, Taewan Kim, Hansel Lo
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Patent number: 11615944Abstract: Embodiments of the present disclosure generally relate to a process chamber for conformal oxidation of high aspect ratio structures. The process chamber includes a liner assembly located in a first side of a chamber body and two pumping ports located in a substrate support portion adjacent a second side of the chamber body opposite the first side. The liner assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the process chamber. The liner assembly may be fabricated from quartz minimize interaction with process gases, such as radicals. The liner assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux. The two pumping ports can be individually controlled to tune the flow of the radicals through the processing region of the process chamber.Type: GrantFiled: March 27, 2018Date of Patent: March 28, 2023Assignee: Applied Materials, Inc.Inventors: Christopher S. Olsen, Eric Kihara Shono, Lara Hawrylchak, Agus Sofian Tjandra, Chaitanya A. Prasad, Sairaju Tallavarjula
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Patent number: 11501945Abstract: In one example, a chamber inlet assembly includes a chamber inlet, an outer coupling for a delivery line, and an inner coupling for a processing region of a processing chamber. The inner coupling and the outer coupling are on inner and outer ends, respectively, of the chamber inlet, wherein a cross-sectional area of the inner coupling is larger than a cross-sectional area of the outer coupling. The chamber inlet assembly also includes a longitudinal profile including the inner and outer ends and a first side and a second side, the first and second sides being on opposite sides of the chamber inlet, wherein a shape of the longitudinal profile comprises at least one of triangular, modified triangular, trapezoidal, modified trapezoidal, rectangular, modified rectangular, rhomboidal, and modified rhomboidal. The chamber inlet assembly also includes cassette including the chamber inlet and configured to set into a side wall of the processing chamber.Type: GrantFiled: November 23, 2020Date of Patent: November 15, 2022Assignee: Applied Materials, Inc.Inventors: Eric Kihara Shono, Vishwas Kumar Pandey, Christopher S. Olsen, Hansel Lo, Agus Sofian Tjandra, Taewan Kim, Tobin Kaufman-Osborn
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Patent number: 11501954Abstract: Embodiments of the present disclosure generally relate to a processing chamber for conformal oxidation of high aspect ratio structures. The processing chamber includes a chamber body with a first side and a second side opposite the first side, and a flow assembly disposed in the first side. The flow assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the processing chamber. The flow divider includes a crescent shaped first side, a top, and a bottom. The processing chamber also includes a distributed pumping structure located adjacent to the second side. The flow assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux.Type: GrantFiled: May 19, 2021Date of Patent: November 15, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Vishwas Kumar Pandey, Kartik Shah, Christopher S. Olsen, Agus Sofian Tjandra, Hansel Lo, Eric Kihara Shono, Hemantha Raju
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Patent number: 11268193Abstract: A gas injection apparatus for a thermal processing chamber includes a gas injector having an inlet at a first end and a port at a second end; and a plate having a first opening matching the port, one or more second openings, and at least one circuitous flow path defined by the plate and fluidly connecting the first opening to the one or more second openings.Type: GrantFiled: June 22, 2020Date of Patent: March 8, 2022Assignee: Applied Materials, Inc.Inventors: Lara Hawrylchak, Agus Sofian Tjandra, Emre Cuvalci
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Publication number: 20210272776Abstract: Embodiments of the present disclosure generally relate to a processing chamber for conformal oxidation of high aspect ratio structures. The processing chamber includes a chamber body with a first side and a second side opposite the first side, and a flow assembly disposed in the first side. The flow assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the processing chamber. The flow divider includes a crescent shaped first side, a top, and a bottom. The processing chamber also includes a distributed pumping structure located adjacent to the second side. The flow assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux.Type: ApplicationFiled: May 19, 2021Publication date: September 2, 2021Inventors: Vishwas Kumar PANDEY, Kartik Bhupendra SHAH, Christopher S. OLSEN, Agus Sofian TJANDRA, Hansel LO, Eric Kihara SHONO, Hemantha RAJU
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Patent number: 11091835Abstract: Implementations of the present disclosure provide apparatus and method for improving gas distribution during thermal processing. One implementation of the present disclosure provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support has a substrate supporting surface, a gas source assembly coupled to an inlet of the chamber body, an exhaust assembly coupled to an outlet of the chamber body, and a side gas assembly coupled to a sidewall of the chamber body, wherein the side gas assembly comprises a gas inlet pointed in a direction that is tangential to the edge of the substrate supporting surface, and wherein the gas inlet, the inlet of the chamber body, and the outlet of the chamber body are angularly offset at about 90° with respect to each other, and the gas inlet, the inlet of the chamber body, and the outlet of the chamber body are intersected by a common plane.Type: GrantFiled: April 15, 2019Date of Patent: August 17, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Agus Sofian Tjandra, Martin John Ripley
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Patent number: 11049696Abstract: Embodiments of the present disclosure generally relate to a processing chamber for conformal oxidation of high aspect ratio structures. The processing chamber includes a chamber body with a first side and a second side opposite the first side, and a flow assembly disposed in the first side. The flow assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the processing chamber. The flow divider includes a crescent shaped first side, a top, and a bottom. The processing chamber also includes a distributed pumping structure located adjacent to the second side. The flow assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux.Type: GrantFiled: March 19, 2020Date of Patent: June 29, 2021Assignee: Applied Materials, Inc.Inventors: Vishwas Kumar Pandey, Kartik Shah, Christopher S. Olsen, Agus Sofian Tjandra, Hansel Lo, Eric Kihara Shono, Hemantha Raju
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Publication number: 20210074505Abstract: In one example, a chamber inlet assembly includes a chamber inlet, an outer coupling for a delivery line, and an inner coupling for a processing region of a processing chamber. The inner coupling and the outer coupling are on inner and outer ends, respectively, of the chamber inlet, wherein a cross-sectional area of the inner coupling is larger than a cross-sectional area of the outer coupling. The chamber inlet assembly also includes a longitudinal profile including the inner and outer ends and a first side and a second side, the first and second sides being on opposite sides of the chamber inlet, wherein a shape of the longitudinal profile comprises at least one of triangular, modified triangular, trapezoidal, modified trapezoidal, rectangular, modified rectangular, rhomboidal, and modified rhomboidal. The chamber inlet assembly also includes cassette including the chamber inlet and configured to set into a side wall of the processing chamber.Type: ApplicationFiled: November 23, 2020Publication date: March 11, 2021Inventors: Eric Kihara SHONO, Vishwas Kumar PANDEY, Christopher S. OLSEN, Hansel LO, Agus Sofian TJANDRA, Taewan KIM, Tobin KAUFMAN-OSBORN
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Publication number: 20210040612Abstract: A gas injection apparatus for a thermal processing chamber includes a gas injector having an inlet at a first end and a port at a second end; and a plate having a first opening matching the port, one or more second openings, and at least one circuitous flow path defined by the plate and fluidly connecting the first opening to the one or more second openings.Type: ApplicationFiled: June 22, 2020Publication date: February 11, 2021Inventors: Lara HAWRYLCHAK, Agus Sofian TJANDRA, Emre CUVALCI
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Patent number: 10847337Abstract: In one example, a chamber inlet assembly includes a chamber inlet, an outer coupling for a delivery line, and an inner coupling for a processing region of a processing chamber. The inner coupling and the outer coupling are on inner and outer ends, respectively, of the chamber inlet, wherein a cross-sectional area of the inner coupling is larger than a cross-sectional area of the outer coupling. The chamber inlet assembly also includes a longitudinal profile including the inner and outer ends and a first side and a second side, the first and second sides being on opposite sides of the chamber inlet, wherein a shape of the longitudinal profile comprises at least one of triangular, modified triangular, trapezoidal, modified trapezoidal, rectangular, modified rectangular, rhomboidal, and modified rhomboidal. The chamber inlet assembly also includes cassette including the chamber inlet and configured to set into a side wall of the processing chamber.Type: GrantFiled: January 15, 2019Date of Patent: November 24, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Eric Kihara Shono, Vishwas Kumar Pandey, Christopher S. Olsen, Hansel Lo, Agus Sofian Tjandra, Taewan Kim, Tobin Kaufman-Osborn
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Publication number: 20200219703Abstract: Embodiments of the present disclosure generally relate to a processing chamber for conformal oxidation of high aspect ratio structures. The processing chamber includes a chamber body with a first side and a second side opposite the first side, and a flow assembly disposed in the first side. The flow assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the processing chamber. The flow divider includes a crescent shaped first side, a top, and a bottom. The processing chamber also includes a distributed pumping structure located adjacent to the second side. The flow assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux.Type: ApplicationFiled: March 19, 2020Publication date: July 9, 2020Inventors: Vishwas Kumar PANDEY, Kartik SHAH, Christopher S. OLSEN, Agus Sofian TJANDRA, Hansel LO, Eric Kihara SHONO, Hemantha RAJU
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Publication number: 20200199748Abstract: The present disclosure generally provides methods of providing at least metastable radical molecular species and/or radical atomic species to a processing volume of a process chamber during an electronic device fabrication process, and apparatus related thereto. In one embodiment, the apparatus is a gas injection assembly disposed between a remote plasma source and a process chamber. The gas injection assembly includes a body, a dielectric liner disposed in the body that defines a gas mixing volume, a first flange to couple the gas injection assembly to a process chamber, and a second flange to couple the gas injection assembly to the remote plasma source. The gas injection assembly further includes one or more gas injection ports formed through the body and the liner.Type: ApplicationFiled: October 24, 2019Publication date: June 25, 2020Inventors: Vishwas Kumar PANDEY, Eric Kihara SHONO, Kartik SHAH, Christopher S. OLSEN, Agus Sofian TJANDRA, Tobin KAUFMAN-OSBORN, Taewan KIM, Hansel LO
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Patent number: 10689757Abstract: A gas injection apparatus for a thermal processing chamber includes a gas injector having an inlet at a first end and a port at a second end; and a plate having a first opening matching the port, one or more second openings, and at least one circuitous flow path defined by the plate and fluidly connecting the first opening to the one or more second openings.Type: GrantFiled: December 29, 2017Date of Patent: June 23, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Lara Hawrylchak, Agus Sofian Tjandra, Emre Cuvalci
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Patent number: 10636626Abstract: Embodiments of the present disclosure generally relate to a processing chamber for conformal oxidation of high aspect ratio structures. The processing chamber includes a chamber body with a first side and a second side opposite the first side, and a flow assembly disposed in the first side. The flow assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the processing chamber. The flow divider includes a crescent shaped first side, a top, and a bottom. The processing chamber also includes a distributed pumping structure located adjacent to the second side. The flow assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux.Type: GrantFiled: December 21, 2018Date of Patent: April 28, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Vishwas Kumar Pandey, Kartik Shah, Christopher S. Olsen, Agus Sofian Tjandra, Hansel Lo, Eric Kihara Shono, Hemantha Raju
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Patent number: 10600641Abstract: Implementations described herein relate to selective oxidation processes for semiconductor device manufacturing. In one implementation, the process includes delivering a substrate having a semiconductor device comprising at least a silicon material and a silicon germanium material formed thereon to a process chamber. Process variables are determined based upon the germanium concentration of the silicon germanium material and a desired oxide thickness and a selective oxidation process is performed utilizing the determined process variables.Type: GrantFiled: July 6, 2018Date of Patent: March 24, 2020Assignee: APPLIED MATERIALS, INC.Inventor: Agus Sofian Tjandra
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Patent number: D924825Type: GrantFiled: January 24, 2018Date of Patent: July 13, 2021Assignee: Applied Materials, Inc.Inventors: Eric Kihara Shono, Vishwas Kumar Pandey, Christopher S. Olsen, Hansel Lo, Agus Sofian Tjandra, Taewan Kim, Tobin Kaufman-Osborn
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Patent number: D1023987Type: GrantFiled: June 7, 2021Date of Patent: April 23, 2024Assignee: Applied Materials, Inc.Inventors: Eric Kihara Shono, Vishwas Kumar Pandey, Christopher S. Olsen, Hansel Lo, Agus Sofian Tjandra, Taewan Kim, Tobin Kaufman-Osborn