Abstract: Methods and apparatus of engineered dielectric profile for high aspect-ratio (AR) 3D NAND structures. The 3D NAND structures comprise a semiconductor structure having multiple stacked memory tiers comprising 2D arrays of memory cells that are charged using vertical structures formed in the semiconductor structure. The memory tiers comprise wordline layers interposed between isolation layers. The vertical structures, such as memory holes or trenches, have a dielectric (e.g., a tunnel dielectric) formed along sidewalls of holes or trenches having a cross-section profile where a thickness of the dielectric at a bottom wordline layer is thicker than the dielectric thickness for at least a portion of wordline layers above the bottom wordline layer. In one example, formation of the tunnel dielectric employs a sandwich design of engineered profile method in which a selective deposition of dielectric is deposited at the bottom sections of the vertical structures while the rest of the structure is un-altered.

Abstract: Systems, apparatuses, and methods may provide for technology that gap-fills stairwells for memory devices. The memory device is manufactured by forming a liner film on a trench of a stairwell layer of the memory device; depositing a doped silicon dioxide film on the liner film, wherein doping of the doped silicon dioxide film is performed during the deposition; and performing a pressurized and steamed anneal on the doped silicon dioxide film deposited on the liner film to form a reflowed doped silicon dioxide film.

Abstract: Methods and apparatus for improving selective oxidation against metals in a process chamber are provided herein. In some embodiments, a method of oxidizing a first surface of a substrate disposed in a process chamber having a processing volume defined by one or more chamber walls may include exposing the substrate to an oxidizing gas to oxidize the first surface; and actively heating at least one of the one or more chamber walls to increase a temperature of the one or more chamber walls to a first temperature of at least the dew point of water while exposing the substrate to the oxidizing gas.

Abstract: Methods and apparatus for improving selective oxidation against metals in a process chamber are provided herein. In some embodiments, a method of oxidizing a first surface of a substrate disposed in a process chamber having a processing volume defined by one or more chamber walls may include exposing the substrate to an oxidizing gas to oxidize the first surface; and actively heating at least one of the one or more chamber walls to increase a temperature of the one or more chamber walls to a first temperature of at least the dew point of water while exposing the substrate to the oxidizing gas.

Abstract: Methods and apparatus for improving selective oxidation against metals in a process chamber are provided herein. In some embodiments, a method of oxidizing a first surface of a substrate disposed in a process chamber having a processing volume defined by one or more chamber walls may include exposing the substrate to an oxidizing gas to oxidize the first surface; and actively heating at least one of the one or more chamber walls to increase a temperature of the one or more chamber walls to a first temperature of at least the dew point of water while exposing the substrate to the oxidizing gas.

Abstract: Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.

Abstract: Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.

Abstract: Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.

Abstract: Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.

Abstract: A thermal processing chamber includes a substrate support rotating about a center axis and a lamphead of plural lamps in an array having a predetermined difference in radiance pattern between them. The radiance pattern includes a variation in diffuseness or collimation. In one embodiment, the center lines of all of the lamps are disposed away from the center axis. The array can be an hexagonal array, in which the center axis is located at a predetermined position between neighboring lamps.

Abstract: A semiconductor wafer processing system including a factory interface operating at atmospheric pressure and mounting plural wafer cassettes and plural wafer processing chambers connected to the factory interface through respective slit valves. A robot in the factory interface can transfer wafers between the cassettes and the processing chambers. At least one of the processing chambers can operate at reduced pressure The processing chamber may be a rapid thermal processing chamber including an array of lamps irradiating a processing volume through a window. The lamphead is vacuum pumped to a pressure approximating that in the processing volume. A multi-step process may be performed with different pressures. The invention also includes a wafer access port of a thermal processing chamber which can flow an inert gas in outside of the slit valve to thereby form a gas curtain outside of the opened slit to prevent the out flow of toxic processing gases.

Abstract: A thermal processing chamber includes a substrate support rotating about a center axis and a lamphead of plural lamps in an array having a predetermined difference in radiance pattern between them. The radiance pattern includes a variation in diffuseness or collimation. In one embodiment, the center lines of all of the lamps are disposed away from the center axis. The array can be an hexagonal array, in which the center axis is located at a predetermined position between neighboring lamps.