Abstract: A power tool has a housing. The housing includes a battery pack attachment area. The battery pack attachment area comprises a battery pack insertion direction, a battery pack insertion opening and an end portion opposite from the battery pack insertion opening in the battery pack insertion direction. The end portion extends across the battery pack insertion direction and has at least one first contact surface for a forward portion of an inserted battery pack. Battery pack guide sections extend parallel to the battery pack insertion direction between the battery pack insertion opening and the end portion and that are spaced apart from each other. The battery pack attachment area comprises an insert which extends along the end portion and includes the at least first contact surface.

Abstract: A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side. The first and second bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is disposed in the semiconductor body. The MOS transistor is coupled between a collector region and an emitter region of the second bipolar transistor. The MOS transistor has a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.

Abstract: A power tool system comprises a power tool and a dust collection attachment. The dust collection attachment comprises an attachment portion mounted on the power tool and a dust collection tube extending alongside the attachment portion. The dust collection attachment comprises a tab configured to retain the dust collection attachment on the power tool and arranged on the dust collection tube. The power tool comprises a pocket in which the tab is located.

Abstract: A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side. The first and second bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is disposed in the semiconductor body. The MOS transistor is coupled between a collector region and an emitter region of the second bipolar transistor. The MOS transistor has a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.

Abstract: A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side. The first and second bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is disposed in the semiconductor body. The MOS transistor is coupled between a collector region and an emitter region of the second bipolar transistor. The MOS transistor has a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.

Abstract: A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side. The first and second bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is disposed in the semiconductor body. The MOS transistor is coupled between a collector region and an emitter region of the second bipolar transistor. The MOS transistor has a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.

Abstract: An electronic device includes a thyristor having an anode, a cathode, a first bipolar transistor disposed on the anode side. A second bipolar transistor is disposed on the cathode side. These two bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is coupled between the collector region and the emitter region of the second bipolar transistor. The transistor has a gate region connected to the cathode via a resistive semiconductor region incorporating at least a part of the base region of the second bipolar transistor.

Abstract: A power tool includes a housing in which a motor is supported and an output shaft coupled to the motor that extends from the housing. A tool holder is secured to the end portion of the output shaft which is configured to releasably retain an accessory tool. The power tool includes an accessory change tool having a driver portion and a handle portion. The driver portion is used to install and remove the accessory change tool from the tool holder. The handle portion and the driver portion are configured to pivot into a folded position at which the handle portion is located adjacent the driver portion. A retainer assembly is incorporated into the housing that is configured to releasably retain the accessory change tool on the housing with the accessory change tool in the folded configuration.

Abstract: An electronic device includes a thyristor having an anode, a cathode, a first bipolar transistor disposed on the anode side. A second bipolar transistor is disposed on the cathode side. These two bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is coupled between the collector region and the emitter region of the second bipolar transistor. The transistor has a gate region connected to the cathode via a resistive semiconductor region incorporating at least a part of the base region of the second bipolar transistor.

Abstract: An electronic device includes a thyristor having an anode, a cathode, a first bipolar transistor disposed on the anode side. A second bipolar transistor is disposed on the cathode side. These two bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is coupled between the collector region and the emitter region of the second bipolar transistor. The transistor has a gate region connected to the cathode via a resistive semiconductor region incorporating at least a part of the base region of the second bipolar transistor.

Abstract: An electronic device includes a thyristor having an anode, a cathode, a first bipolar transistor disposed on the anode side. A second bipolar transistor is disposed on the cathode side. These two bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is coupled between the collector region and the emitter region of the second bipolar transistor. The transistor has a gate region connected to the cathode via a resistive semiconductor region incorporating at least a part of the base region of the second bipolar transistor.

Abstract: A power tool includes a housing in which a motor is supported and an output shaft coupled to the motor that extends from the housing. A tool holder is secured to the end portion of the output shaft which is configured to releasably retain an accessory tool. The power tool includes an accessory change tool having a driver portion and a handle portion. The driver portion is used to install and remove the accessory change tool from the tool holder. The handle portion and the driver portion are configured to pivot into a folded position at which the handle portion is located adjacent the driver portion. A retainer assembly is incorporated into the housing that is configured to releasably retain the accessory change tool on the housing with the accessory change tool in the folded configuration.

Abstract: A method for manufacturing integrated circuits is provided in which monocrystalline silicon islets are formed completely isolated from the substrate itself made from monocrystalline silicon, by a thick oxide layer.This thick oxide layer is formed in the following way: silicon islets are formed whose top and sides are protected with silicon nitride. Then the silicon is etched isotropically, which hollows out deeply under the islets. Thick oxidization then makes up the whole of the silicon under the islets.Thus isolated silicon islets are obtained of the same crystalline quality as the substrate.