Patents by Inventor Ah Ra Jo

Ah Ra Jo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210398930
    Abstract: A semiconductor device includes a low-density substrate, a high-density patch positioned inside a cavity in the low-density substrate, a first semiconductor die, and a second semiconductor die. The first semiconductor dies includes high-density bumps and low-density bumps. The second semiconductor die includes high-density bumps and low-density bumps. The high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch. The low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.
    Type: Application
    Filed: May 24, 2021
    Publication date: December 23, 2021
    Inventors: Jae Hun Bae, Won Chul Do, Min Yoo, Young Rae Kim, Min Hwa Chang, Dong Hyun Kim, Ah Ra Jo, Seok Geun Ahn
  • Patent number: 11018107
    Abstract: A semiconductor device includes a low-density substrate, a high-density patch positioned inside a cavity in the low-density substrate, a first semiconductor die, and a second semiconductor die. The first semiconductor dies includes high-density bumps and low-density bumps. The second semiconductor die includes high-density bumps and low-density bumps. The high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch. The low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.
    Type: Grant
    Filed: May 20, 2019
    Date of Patent: May 25, 2021
    Assignee: Amkor Technology Singapore Holding Pte. Ltd.
    Inventors: Jae Hun Bae, Won Chul Do, Min Yoo, Young Rae Kim, Min Hwa Chang, Dong Hyun Kim, Ah Ra Jo, Seok Geun Ahn
  • Publication number: 20200051944
    Abstract: A semiconductor device includes a low-density substrate, a high-density patch positioned inside a cavity in the low-density substrate, a first semiconductor die, and a second semiconductor die. The first semiconductor dies includes high-density bumps and low-density bumps. The second semiconductor die includes high-density bumps and low-density bumps. The high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch. The low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.
    Type: Application
    Filed: May 20, 2019
    Publication date: February 13, 2020
    Inventors: Jae Hun Bae, Won Chul Do, Min Yoo, Young Rae Kim, Min Hwa Chang, Dong Hyun Kim, Ah Ra Jo, Seok Geun Ahn
  • Patent number: 10340244
    Abstract: A semiconductor device includes a low-density substrate, a high-density patch positioned inside a cavity in the low-density substrate, a first semiconductor die, and a second semiconductor die. The first semiconductor dies includes high-density bumps and low-density bumps. The second semiconductor die includes high-density bumps and low-density bumps. The high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch. The low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.
    Type: Grant
    Filed: December 19, 2017
    Date of Patent: July 2, 2019
    Assignee: AMKOR TECHNOLOGY, INC.
    Inventors: Jae Hun Bae, Won Chul Do, Min Yoo, Young Rae Kim, Min Hwa Chang, Dong Hyun Kim, Ah Ra Jo, Seok Geun Ahn
  • Publication number: 20180211929
    Abstract: A semiconductor device includes a low-density substrate, a high-density patch positioned inside a cavity in the low-density substrate, a first semiconductor die, and a second semiconductor die. The first semiconductor dies includes high-density bumps and low-density bumps. The second semiconductor die includes high-density bumps and low-density bumps. The high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch. The low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.
    Type: Application
    Filed: December 19, 2017
    Publication date: July 26, 2018
    Inventors: Jae Hun Bae, Won Chul Do, Min Yoo, Young Rae Kim, Min Hwa Chang, Dong Hyun Kim, Ah Ra Jo, Seok Geun Ahn