Abstract: Semiconductive photoanodes formed of titanium dioxide (TiO.sub.2) are known for use in photoelectrochemical cells. They have been made by various techniques, including chemical vapor deposition, thermal oxidation or anodic oxidation of thin titanium foils, hot pressing of TiO.sub.2 powder, and plasma spraying. The present invention provides a method for the fabrication of TiO.sub.2 thick film photoanodes, which method is simple, inexpensive and suitable for mass production of large area plates. The method comprises screen printing a film of conductive material on a clean alumina substrate which is then heated to fuse the conductive material into a conductive layer. A first layer of TiO.sub.2 particles in an organic carrier is then screen-printed over the conductive layer, at least 10% of the TiO.sub.2 being of anatase form. The structure is then heated to burn off the organic carrier and to transform at least part of the TiO.sub.2 from anatase form to rutile form, this resulting in good adhesion of the TiO.