Abstract: A method for measuring electrical quantities in an electrical system includes obtaining a first set of known electrical outputs of an electrical quantity sensor at a first temperature. The method also includes obtaining a second set of known electrical outputs of the electrical quantity sensor at a second temperature that is different from the first temperature. The method further includes measuring an operational temperature of one or more locations in the electrical system. The method still further includes computing a pair of reference electrical output values corresponding to the measured operational temperature in accordance with the first set of known electrical outputs at the first temperature and the second set of known electrical outputs at the second temperature.

Abstract: A resistor ladder comprising identical resistors is disposed electrically in parallel with a multicell battery to calibrate voltage-controlled oscillators or analog-to-digital convertors for voltage balancing the battery cells in the multicell battery. Switches in a first state provide the voltage across each resistor as inputs to the VCOs or ADCs. The number of oscillations of the output signal of each VCO or ADC over a predetermined time period are compared to determine an offset error. Switches in a second state provide the voltage across each battery cell as inputs to the VCOs or ADCs. The battery cells with a higher relative voltage can be discharged until they are balanced. Some aspects describe temperature-adjusted and interpolated determinations of electrical quantities in the cells such as voltage and/or current.

Abstract: A resistor ladder comprising identical resistors is disposed electrically in parallel with a multicell battery to calibrate voltage-controlled oscillators or analog-to-digital convertors for voltage balancing the battery cells in the multicell battery. Switches in a first state provide the voltage across each resistor as inputs to the VCOs or ADCs. The number of oscillations of the output signal of each VCO or ADC over a predetermined time period are compared to determine an offset error. Switches in a second state provide the voltage across each battery cell as inputs to the VCOs or ADCs. The battery cells with a higher relative voltage can be discharged until they are balanced. Some aspects describe temperature-adjusted and interpolated determinations of electrical quantities in the cells such as voltage and/or current.

Abstract: A resistor ladder comprising identical resistors is disposed electrically in parallel with a multicell battery to calibrate voltage-controlled oscillators or analog-to-digital converters for voltage balancing the battery cells in the multicell battery. Switches in a first state provide the voltage across each resistor as inputs to the VCOs or ADCs. The number of oscillations of the output signal of each VCO or ADC over a predetermined time period are compared to determine an offset error. Switches in a second state provide the voltage across each battery cell as inputs to the VCOs or ADCs. The battery cells with a higher relative voltage can be discharged until they are balanced. Some aspects describe temperature-adjusted and interpolated determinations of electrical quantities in the cells such as voltage and/or current.

Abstract: In some general aspects, an apparatus may include a first semiconductor die, a second semiconductor die, and a capacitive isolation circuit being coupled to the first semiconductor die and the second semiconductor die. The capacitive isolation circuit may be disposed outside of the first semiconductor die and the second semiconductor die. The first semiconductor die, the second semiconductor die, and the capacitive circuit may be included in a molding of a semiconductor package.

Abstract: Techniques for forming a wafer level package device are disclosed. In one or more embodiments, the techniques include forming a wafer level lead frame on a carrier wafer and electrically connecting the wafer level lead frame to an active semiconductor wafer. The carrier wafer and the active semiconductor wafer have at least substantially the same coefficients of thermal expansion. The carrier wafer can be removed from the wafer level package device, and a number of connectors can be formed on the wafer level package device. The wafer level package device can be singulated to form chip packages, such as DFN or QFN packages.

Abstract: A resistor ladder comprising identical resistors is disposed electrically in parallel with a multicell battery to calibrate voltage-controlled oscillators or analog-to-digital convertors for voltage balancing the battery cells in the multicell battery. Switches in a first state provide the voltage across each resistor as inputs to the VCOs or ADCs. The number of oscillations of the output signal of each VCO or ADC over a predetermined time period are compared to determine an offset error. Switches in a second state provide the voltage across each battery cell as inputs to the VCOs or ADCs. The battery cells with a higher relative voltage can be discharged until they are balanced. Some aspects describe temperature-adjusted and interpolated determinations of electrical quantities in the cells such as voltage and/or current.

Abstract: In some general aspects, an apparatus may include a first semiconductor die, a second semiconductor die, and a capacitive isolation circuit being coupled to the first semiconductor die and the second semiconductor die. The capacitive isolation circuit may be disposed outside of the first semiconductor die and the second semiconductor die. The first semiconductor die, the second semiconductor die, and the capacitive circuit may be included in a molding of a semiconductor package.

Abstract: In some general aspects, an apparatus may include a first semiconductor die, a second semiconductor die, and a capacitive isolation circuit being coupled to the first semiconductor die and the second semiconductor die. The capacitive isolation circuit may be disposed outside of the first semiconductor die and the second semiconductor die. The first semiconductor die, the second semiconductor die, and the capacitive circuit may be included in a molding of a semiconductor package.

Abstract: Semiconductor package device, such as wafer-level package semiconductor devices, are described that have pillars for providing electrical interconnectivity. In an implementation, the wafer-level package devices include an integrated circuit chip having at least one pillar formed over the integrated circuit chip. The pillar is configured to provide electrical interconnectivity with the integrated circuit chip. The wafer-level package device also includes an encapsulation structure configured to support the pillar.

Abstract: In some general aspects, an apparatus may include a first semiconductor die, a second semiconductor die, and a capacitive isolation circuit being coupled to the first semiconductor die and the second semiconductor die. The capacitive isolation circuit may be disposed outside of the first semiconductor die and the second semiconductor die. The first semiconductor die, the second semiconductor die, and the capacitive circuit may be included in a molding of a semiconductor package.

Abstract: Semiconductor package device, such as wafer-level package semiconductor devices, are described that have pillars for providing electrical interconnectivity. In an implementation, the wafer-level package devices include an integrated circuit chip having at least one pillar formed over the integrated circuit chip. The pillar is configured to provide electrical interconnectivity with the integrated circuit chip. The wafer-level package device also includes an encapsulation structure configured to support the pillar.

Abstract: In one general aspect, a method can include forming a redistribution layer on a substrate using a first electroplating process, and forming a conductive pillar on the redistribution layer using a second electroplating process. The method can include coupling a semiconductor die to the redistribution layer, and can include forming a molding layer encapsulating at least a portion of the redistribution layer and at least a portion of the conductive pillar.

Abstract: Semiconductor package device, such as wafer-level package semiconductor devices, are described that have pillars for providing electrical interconnectivity. In an implementation, the wafer-level package devices include an integrated circuit chip having at least one pillar formed over the integrated circuit chip. The pillar is configured to provide electrical interconnectivity with the integrated circuit chip. The wafer-level package device also includes an encapsulation structure configured to support the pillar.

Abstract: A MOSFET power chip includes a first vertical MOSFET and a second vertical MOSFET. The first vertical MOSFET includes a semiconductor body having a first surface defining a source and a second surface defining a drain and a gate structure formed in the semiconductor body near the second surface. A via is formed within the semiconductor body and is substantially perpendicular to the first surface and the second surface. The via has a first end electrically coupled to the first surface and a second end electrically coupled to the gate structure. The second vertical MOSFET includes a semiconductor body having a first surface defining a source, a second surface defining a drain and a gate structure formed in the semiconductor body near the first surface.

Abstract: A MOSFET power chip includes a first vertical MOSFET and a second vertical MOSFET. The first vertical MOSFET includes a semiconductor body having a first surface defining a source and a second surface defining a drain and a gate structure formed in the semiconductor body near the second surface. A via is formed within the semiconductor body and is substantially perpendicular to the first surface and the second surface. The via has a first end electrically coupled to the first surface and a second end electrically coupled to the gate structure. The second vertical MOSFET includes a semiconductor body having a first surface defining a source, a second surface defining a drain and a gate structure formed in the semiconductor body near the first surface.

Abstract: In an embodiment, set forth by way of example and not limitation, a MOSFET power chip includes a first vertical MOSFET and a second vertical MOSFET. The first vertical MOSFET includes a semiconductor body having a first surface defining a source and a second surface defining a drain and a gate structure formed in the semiconductor body near the second surface. A via is formed within the semiconductor body and is substantially perpendicular to the first surface and the second surface. The via has a first end electrically coupled to the first surface and a second end electrically coupled to the gate structure. The second vertical MOSFET includes a semiconductor body having a first surface defining a source, a second surface defining a drain and a gate structure formed in the semiconductor body near the first surface.

Abstract: In an embodiment, set forth by way of example and not limitation, a MOSFET power chip includes a first vertical MOSFET and a second vertical MOSFET. The first vertical MOSFET includes a semiconductor body having a first surface defining a source and a second surface defining a drain and a gate structure formed in the semiconductor body near the second surface. A via is formed within the semiconductor body and is substantially perpendicular to the first surface and the second surface. The via has a first end electrically coupled to the first surface and a second end electrically coupled to the gate structure. The second vertical MOSFET includes a semiconductor body having a first surface defining a source, a second surface defining a drain and a gate structure formed in the semiconductor body near the first surface.

Abstract: Integrated circuit packages incorporating an inductor and methods for their fabrication. The lead frame used in packaging the integrated circuit includes a first area for receiving the integrated circuit, and a second area having a plurality of connections from one side to the other side of the lead frame, thereby forming coil segments. After mounting the integrated circuit and wire bonding its connections, the lead frame is placed on a ferrite plate, the assembly is encapsulated in resin, and the leads trimmed and bent. Mounting of the packaged integrated circuit on a properly prepared printed circuit interconnects the coil segments in the package to coil segments on the printed circuit, thereby forming a single, multi-turn coil around the ferrite plate. Various embodiments are disclosed.

Abstract: In an embodiment, set forth by way of example and not limitation, a MOSFET power chip includes a first vertical MOSFET and a second vertical MOSFET. The first vertical MOSFET includes a semiconductor body having a first surface defining a source and a second surface defining a drain and a gate structure formed in the semiconductor body near the second surface. A via is formed within the semiconductor body and is substantially perpendicular to the first surface and the second surface. The via has a first end electrically coupled to the first surface and a second end electrically coupled to the gate structure. The second vertical MOSFET includes a semiconductor body having a first surface defining a source, a second surface defining a drain and a gate structure formed in the semiconductor body near the first surface.