Patents by Inventor Ahmad CHAKER

Ahmad CHAKER has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming spacers of a transistor
    Patent number: 11393689
    Abstract: A method for forming spacers on a gate pattern includes deposition of a first dielectric layer having basal portions on an active layer and side portions of the edges of the pattern; anisotropic modification of only the basal portions of the first layer, so as to obtain modified basal portions; deposition of a second dielectric layer on the first layer, also having basal and side portions; anisotropic etching of only the basal portions of the second layer, so as to remove these basal portions while conserving the side portions; and removal of the modified basal portions while conserving the first and second non-modified side portions, by selective etching of the modified dielectric material vis-à-vis the non-modified dielectric material.
    Type: Grant
    Filed: July 10, 2020
    Date of Patent: July 19, 2022
    Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS), UNIVERSITE GRENOBLE ALPES
    Inventors: Nicolas Posseme, Marceline Bonvalot, Ahmad Chaker, Christophe Vallee
  • METHOD FOR FORMING SPACERS OF A TRANSISTOR
    Publication number: 20210013040
    Abstract: A method for forming spacers on a gate pattern includes deposition of a first dielectric layer having basal portions on an active layer and side portions of the edges of the pattern; anisotropic modification of only the basal portions of the first layer, so as to obtain modified basal portions; deposition of a second dielectric layer on the first layer, also having basal and side portions; anisotropic etching of only the basal portions of the second layer, so as to remove these basal portions while conserving the side portions; and removal of the modified basal portions while conserving the first and second non-modified side portions, by selective etching of the modified dielectric material vis-à-vis the non-modified dielectric material.
    Type: Application
    Filed: July 10, 2020
    Publication date: January 14, 2021
    Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS), UNIVERSITE GRENOBLE ALPES
    Inventors: Nicolas POSSEME, Marceline BONVALOT, Ahmad CHAKER, Christophe VALLEE