Patents by Inventor Ahmad ZUBAIR

Ahmad ZUBAIR has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240213140
    Abstract: Structures having backside high voltage capacitors for front side GaN-based devices are described. In an example, an integrated circuit structure includes a front side structure including a GaN-based device layer, and one or more metallization layers above the GaN-based device layer. A backside structure is below and coupled to the GaN-based layer, the backside structure including metal layers and one or more alternating laterally-recessed metal insulator metal capacitors.
    Type: Application
    Filed: December 24, 2022
    Publication date: June 27, 2024
    Inventors: Han Wui THEN, Marko RADOSAVLJEVIC, Samuel James BADER, Ahmad ZUBAIR, Pratik KOIRALA, Michael S. BEUMER, Heli Chetanbhai VORA, Ibrahim BAN, Nityan NAIR, Thomas HOFF
  • Publication number: 20240213118
    Abstract: Gallium nitride (GaN) devices with through-silicon vias for integrated circuit technology are described. In an example, an integrated circuit structure includes a layer including gallium and nitrogen, the layer including gallium and nitrogen above a silicon substrate. A backside structure is below the silicon substrate and opposite the layer including gallium and nitrogen, the backside structure including conductive features and dielectric structures. The integrated circuit structure also includes a plurality of through-silicon via power bars having a staggered arrangement, individual ones of the through-silicon via power bars extending through the layer including gallium and nitrogen and through the silicon substrate to a corresponding one of the conductive features of the backside structure, and individual ones of the through-silicon via power bars having a tapered portion coupled to an essentially vertical portion.
    Type: Application
    Filed: December 24, 2022
    Publication date: June 27, 2024
    Inventors: Han Wui THEN, Marko RADOSAVLJEVIC, Heli Chetanbhai VORA, Samuel James BADER, Ahmad ZUBAIR, Thomas HOFF, Pratik KOIRALA, Michael S. BEUMER, Paul NORDEEN, Nityan NAIR
  • Publication number: 20240204091
    Abstract: Devices, transistor structures, systems, and techniques are described herein related to low aluminum concentration aluminum gallium nitride interlayers for group III-nitride enhancement mode transistors. The low aluminum concentration aluminum gallium nitride interlayer includes a lower aluminum concentration than a polarization layer of the transistor, such that the polarization layer induces a two-dimensional electron gas in a semiconductor layer of the transistor. The low aluminum concentration aluminum gallium nitride interlayer may be implemented as an etch stop layer, as a gate liner, or both.
    Type: Application
    Filed: December 19, 2022
    Publication date: June 20, 2024
    Applicant: Intel Corporation
    Inventors: Heli Vora, Marko Radosavljevic, Pratik Koirala, Han Wui Then, Michael Beumer, Ahmad Zubair, Samuel Bader
  • Publication number: 20240162105
    Abstract: A semiconductor device having an electric field management layer. The electric field management layer comprises a material with a relatively high dielectric constant that minimizes the risk of an electric field within the semiconductor device breaking down and damaging the semiconductor device.
    Type: Application
    Filed: March 29, 2022
    Publication date: May 16, 2024
    Applicant: Massachusetts Institute of Technology
    Inventors: Tomas Palacios, Ahmad Zubair, John Niroula
  • Publication number: 20240021725
    Abstract: Gallium nitride (GaN) transistors with lateral depletion for integrated circuit technology are described. In an example, an integrated circuit structure includes a layer including gallium and nitrogen above a silicon substrate, a gate structure over the layer including gallium and nitrogen, a source region on a first side of the gate structure, a drain region on a second side of the gate structure, and a source field plate laterally between the gate structure and the drain region, the source field plate laterally separated from the gate structure.
    Type: Application
    Filed: December 24, 2022
    Publication date: January 18, 2024
    Inventors: Han Wui THEN, Marko RADOSAVLJEVIC, Samuel James BADER, Pratik KOIRALA, Michael S. BEUMER, Heli Chetanbhai VORA, Ahmad ZUBAIR