Patents by Inventor Ahmed Maarouf

Ahmed Maarouf has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9177688
    Abstract: A nanotube-graphene hybrid film and method for forming a cleaned nanotube-graphene hybrid film. The method includes depositing nanotube film over a substrate to produce a layer of nanotube film, removing impurities from a surface of the layer of nanotube film not contacting the substrate to produce a cleaned layer of nanotube film, depositing a layer of graphene over the cleaned layer of nanotube film to produce a nanotube-graphene hybrid film, and removing impurities from a surface of the nanotube-graphene hybrid film to produce a cleaned nanotube-graphene hybrid film, wherein the hybrid film has improved electrical performance. Another method includes depositing nanotube film over a metal foil to produce a layer of nanotube film, placing the metal foil with as-deposited nanotube film in a chemical vapor deposition furnace to grow graphene on the nanotube film to form a nanotube-graphene hybrid film, and transferring the nanotube-graphene hybrid film over a substrate.
    Type: Grant
    Filed: November 22, 2011
    Date of Patent: November 3, 2015
    Assignees: International Business Machines Corporation, Egypt Nanotechnology Center
    Inventors: Ageeth A. Bol, Bhupesh Chandra, Amal Kasry, Ahmed Maarouf, Glenn J. Martyna, George S. Tulevski
  • Publication number: 20150279677
    Abstract: An apparatus and method for forming a patterned graphene layer on a substrate. One such method includes forming at least one patterned structure on a substrate; applying a layer of graphene on top of the at least one patterned structure on the substrate; heating the layer of graphene on top of the at least one patterned structure to remove one or more graphene regions proximate to the at least one patterned structure; and removing the at least one patterned structure to produce a patterned graphene layer on the substrate, wherein the patterned graphene layer on the substrate provides carrier mobility for electronic devices.
    Type: Application
    Filed: April 29, 2015
    Publication date: October 1, 2015
    Inventors: Ali Afzali-Ardakani, Ahmed Maarouf, Glenn J. Martyna, Katherine Saenger
  • Publication number: 20150276726
    Abstract: A graphene nanomesh based charge sensor and method for producing a graphene nanomesh based charge sensor. A graphene nanomesh based charge sensor includes a graphene nanomesh with a patterned array of multiple holes created by generating multiple holes in graphene in a periodic way, wherein: an edge of each of the multiple holes of the graphene nanomesh is passivated; and the passivated edge of each of the multiple holes of the graphene nanomesh is functionalized with a chemical compound that facilitates chemical binding of a receptor of a target molecule to the edge of one or more of the multiple holes, allowing the target molecule to bind to the receptor, causing a charge to be transferred to the graphene nanomesh to produce a graphene nanomesh based charge sensor for the target molecule.
    Type: Application
    Filed: April 29, 2015
    Publication date: October 1, 2015
    Inventors: Ali Afzali-Ardakani, Shu-jen Han, Amal Kasry, Ahmed Maarouf, Glenn J. Martyna, Razvan Nistor, Hsinyu Tsai
  • Patent number: 9142471
    Abstract: A doped, passivated graphene nanomesh includes a graphene nanomesh, a plurality of nanoholes formed in a graphene sheet, and a plurality of carbon atoms which are formed adjacent to the plurality of nanoholes; a passivating element bonded to the plurality of carbon atoms; and a dopant bonded to the passivating element, the dopant comprising one of an electron-donating element for making the graphene nanomesh an n-doped graphene nanomesh, and an electron-accepting element for making the graphene nanomesh a p-doped graphene nanomesh.
    Type: Grant
    Filed: November 14, 2014
    Date of Patent: September 22, 2015
    Assignees: International Business Machines Incorporated, Egypt Nanotechnology Center
    Inventors: Ahmed Abou-Kandil, Ahmed Maarouf, Glenn John Martyna, Hisham Mohamed, Dennis M. Newns
  • Publication number: 20150235730
    Abstract: Structures and methods for forming a patterned graphene layer on a substrate. One such method includes forming at least one patterned structure of a carbide-forming metal or metal-containing alloy on a substrate, applying a layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy on the substrate, heating the layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy in an environment to remove graphene regions proximate to the at least one patterned structure of a carbide-forming metal or metal-containing alloy, and removing the at least one patterned structure of a carbide-forming metal or metal-containing alloy to produce a patterned graphene layer on the substrate, wherein the patterned graphene layer on the substrate provides carrier mobility for electronic devices.
    Type: Application
    Filed: April 29, 2015
    Publication date: August 20, 2015
    Inventors: Ali Afzali-Ardakani, Ahmed Maarouf, Glenn J. Martyna, Katherine Saenger
  • Publication number: 20150233900
    Abstract: A graphene nanomesh based charge sensor and method for producing a graphene nanomesh based charge sensor. The method includes generating multiple holes in graphene to create a graphene nanomesh with a patterned array of multiple holes; passivating an edge of each of the multiple holes of the graphene nanomesh to allow for functionalization of the graphene nanomesh; and functionalizing the passivated edge of each of the multiple holes of the graphene nanomesh with a chemical compound that facilitates chemical binding of a receptor of a target molecule to the edge of one or more of the multiple holes, wherein the receptor is a molecule that chemically binds to the target molecule, irrespective of the size of the target molecule.
    Type: Application
    Filed: April 29, 2015
    Publication date: August 20, 2015
    Inventors: Ali Afzali-Ardakani, Shu-jen Han, Amal Kasry, Ahmed Maarouf, Glenn J. Martyna, Razvan Nistor, Hsinyu Tsai
  • Patent number: 9102118
    Abstract: An apparatus and method for forming a patterned graphene layer on a substrate. One such method includes forming at least one patterned structure of a carbide-forming metal or metal-containing alloy on a substrate, applying a layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy on the substrate, heating the layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy in an environment to remove graphene regions proximate to the at least one patterned structure of a carbide-forming metal or metal-containing alloy, and removing the at least one patterned structure of a carbide-forming metal or metal-containing alloy to produce a patterned graphene layer on the substrate, wherein the patterned graphene layer on the substrate provides carrier mobility for electronic devices.
    Type: Grant
    Filed: December 5, 2011
    Date of Patent: August 11, 2015
    Assignees: International Business Machines Corporation, Egypt Nanotechnology Center (EGNC)
    Inventors: Ali Afzali-Ardakani, Ahmed Maarouf, Glenn J. Martyna, Katherine Saenger
  • Patent number: 9102540
    Abstract: A graphene nanomesh based charge sensor and method for producing a graphene nanomesh based charge sensor. The method includes generating multiple holes in graphene in a periodic way to create a graphene nanomesh with a patterned array of multiple holes, passivating an edge of each of the multiple holes of the graphene nanomesh to allow for functionalization of the graphene nanomesh, and functionalizing the passivated edge of each of the multiple holes of the graphene nanomesh with a chemical compound that facilitates chemical binding of a receptor of a target molecule to the edge of one or more of the multiple holes, allowing the target molecule to bind to the receptor, causing a charge to be transferred to the graphene nanomesh to produce a graphene nanomesh based charge sensor for the target molecule.
    Type: Grant
    Filed: December 2, 2011
    Date of Patent: August 11, 2015
    Assignees: International Business Machines Corporation, Egypt Nanotechnology Center (EGNC)
    Inventors: Ali Afzali-Ardakani, Shu-jen Han, Amal Kasry, Ahmed Maarouf, Glenn J. Martyna, Razvan Nistor, Hsinyu Tsai
  • Publication number: 20150069305
    Abstract: A doped, passivated graphene nanomesh includes a graphene nanomesh, a plurality of nanoholes formed in a graphene sheet, and a plurality of carbon atoms which are formed adjacent to the plurality of nanoholes; a passivating element bonded to the plurality of carbon atoms; and a dopant bonded to the passivating element, the dopant comprising one of an electron-donating element for making the graphene nanomesh an n-doped graphene nanomesh, and an electron-accepting element for making the graphene nanomesh a p-doped graphene nanomesh.
    Type: Application
    Filed: November 14, 2014
    Publication date: March 12, 2015
    Inventors: Ahmed Abou-Kandil, Ahmed Maarouf, Glenn John Martyna, Hisham Mohamed, Dennis M. Newns
  • Patent number: 8900538
    Abstract: A method of making a semiconductor device, includes providing a graphene sheet, creating a plurality of nanoholes in the graphene sheet to form a graphene nanomesh, the graphene nanomesh including a plurality of carbon atoms which are formed adjacent to the plurality of nanoholes, passivating a dangling bond on the plurality of carbon atoms by bonding a passivating element to the plurality of carbon atoms, and doping the passivated graphene nanomesh by bonding a dopant to the passivating element.
    Type: Grant
    Filed: July 31, 2011
    Date of Patent: December 2, 2014
    Assignees: International Business Machines Corporation, Egypt Nanotechnology Center
    Inventors: Ahmed Abou-Kandil, Ahmed Maarouf, Glenn J. Martyna, Hisham Mohamed, Dennis M. Newns
  • Patent number: 8835686
    Abstract: A method, an apparatus and an article of manufacture for attracting charged nanoparticles using a graphene nanomesh. The method includes creating a graphene nanomesh by generating multiple holes in graphene, wherein each of the multiple holes is of a size appropriate to a targeted charged nanoparticle, selectively passivating the multiple holes of the graphene nanomesh to form a charged ring in the graphene nanomesh by treating the graphene nanomesh with chemistry yielding a trap with an opposite charge to that of the targeted nanoparticle, and electrostatically attracting the target charged nanoparticle to the oppositely charged ring to facilitate docking of the charged nanoparticle to the graphene nanomesh.
    Type: Grant
    Filed: November 22, 2011
    Date of Patent: September 16, 2014
    Assignee: International Business Machines Corporation
    Inventors: Ali Afzali-Ardakani, Ahmed Maarouf, Glenn J. Martyna
  • Patent number: 8834967
    Abstract: A method of reducing the diameter of pores formed in a graphene sheet includes forming at least one pore having a first diameter in the graphene sheet such that the at least one pore is surrounded by passivated edges of the graphene sheet. The method further includes chemically reacting the passivated edges with a chemical compound. The method further includes forming a molecular brush at the passivated edges in response to the chemical reaction to define a second diameter that is less than the initial diameter of the at least one pore.
    Type: Grant
    Filed: August 14, 2013
    Date of Patent: September 16, 2014
    Assignee: International Business Machines Corporation
    Inventors: Ali Afzali-Ardakani, Ahmed A. Maarouf, Glenn J. Martyna
  • Publication number: 20140203467
    Abstract: A method of reducing the diameter of pores formed in a graphene sheet includes forming at least one pore having a first diameter in the graphene sheet such that the at least one pore is surrounded by passivated edges of the graphene sheet. The method further includes chemically reacting the passivated edges with a chemical compound. The method further includes forming a molecular brush at the passivated edges in response to the chemical reaction to define a second diameter that is less than the initial diameter of the at least one pore.
    Type: Application
    Filed: August 14, 2013
    Publication date: July 24, 2014
    Applicant: International Business Machines Corporation
    Inventors: Ali Afzali-Ardakani, Ahmed A. Maarouf, Glenn J. Martyna
  • Publication number: 20140205796
    Abstract: A graphene nanomesh includes a graphene sheet having a plurality of pores formed therethrough. Each pore has a first diameter defined by an inner edge of the graphene sheet. A plurality of passivation elements are bonded to the inner edge of each pore. The plurality of passivation elements defines a second diameter that is less than the first diameter to decrease an overall diameter of at least one pore among the plurality of pores.
    Type: Application
    Filed: January 18, 2013
    Publication date: July 24, 2014
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Ali Afzali-Ardakani, Ahmed A. Maarouf, Glenn J. Martyna
  • Publication number: 20130164882
    Abstract: Disclosed is a method which includes forming a bottom metallic electrode on an insulating substrate; forming a semiconductor junction on the metallic electrode; forming a transparent conducting overlayer in contact with the semiconductor junction; and forming a metallic layer in contact with the transparent conducting overlayer, wherein the metallic layer is formed by a plating process. The plating process may be an electroplating process or an electroless plating process. The transparent conducting overlayer may be carbon nanotubes or graphene. The semiconductor junction may be a p-i-n semiconductor junction, a p-n semiconductor junction, an n-p semiconductor junction or an n-i-p semiconductor junction.
    Type: Application
    Filed: December 23, 2011
    Publication date: June 27, 2013
    Applicant: International Business Machines Corporation
    Inventors: Ali Afzali-Ardakani, Ageeth A. Bol, Mostafa M. EI-Ashry, Amal Kasry, Ahmed Maarouf, Glenn J. Martyna, Dennis M. Newns, Razvan Nistor, George S. Tulevski
  • Publication number: 20130143769
    Abstract: A graphene nanomesh based charge sensor and method for producing a graphene nanomesh based charge sensor. The method includes generating multiple holes in graphene in a periodic way to create a graphene nanomesh with a patterned array of multiple holes, passivating an edge of each of the multiple holes of the graphene nanomesh to allow for functionalization of the graphene nanomesh, and functionalizing the passivated edge of each of the multiple holes of the graphene nanomesh with a chemical compound that facilitates chemical binding of a receptor of a target molecule to the edge of one or more of the multiple holes, allowing the target molecule to bind to the receptor, causing a charge to be transferred to the graphene nanomesh to produce a graphene nanomesh based charge sensor for the target molecule.
    Type: Application
    Filed: December 2, 2011
    Publication date: June 6, 2013
    Applicants: EGYPT NANOTECHNOLOGY CENTER (EGNC), INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Ali Afzali-Ardakani, Shu-jen Han, Amal Kasry, Ahmed Maarouf, Glenn J. Martyna, Razvan Nistor, Hsinyu Tsai
  • Publication number: 20130143000
    Abstract: An apparatus and method for forming a patterned graphene layer on a substrate. One such method includes forming at least one patterned structure of a carbide-forming metal or metal-containing alloy on a substrate, applying a layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy on the substrate, heating the layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy in an environment to remove graphene regions proximate to the at least one patterned structure of a carbide-forming metal or metal-containing alloy, and removing the at least one patterned structure of a carbide-forming metal or metal-containing alloy to produce a patterned graphene layer on the substrate, wherein the patterned graphene layer on the substrate provides carrier mobility for electronic devices.
    Type: Application
    Filed: December 5, 2011
    Publication date: June 6, 2013
    Applicants: EGYPT NANOTECHNOLOGY CENTER (EGNC), INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Ali Afzali-Ardakani, Ahmed Maarouf, Glenn J. Martyna, Katherine Saenger
  • Publication number: 20130131383
    Abstract: A method, an apparatus and an article of manufacture for attracting charged nanoparticles using a graphene nanomesh. The method includes creating a graphene nanomesh by generating multiple holes in graphene, wherein each of the multiple holes is of a size appropriate to a targeted charged nanoparticle, selectively passivating the multiple holes of the graphene nanomesh to form a charged ring in the graphene nanomesh by treating the graphene nanomesh with chemistry yielding a trap with an opposite charge to that of the targeted nanoparticle, and electrostatically attracting the target charged nanoparticle to the oppositely charged ring to facilitate docking of the charged nanoparticle to the graphene nanomesh.
    Type: Application
    Filed: November 22, 2011
    Publication date: May 23, 2013
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Ali Afzali-Ardakani, Ahmed Maarouf, Glenn J. Martyna
  • Publication number: 20130130037
    Abstract: A nanotube-graphene hybrid film and method for forming a cleaned nanotube-graphene hybrid film. The method includes depositing nanotube film over a substrate to produce a layer of nanotube film, removing impurities from a surface of the layer of nanotube film not contacting the substrate to produce a cleaned layer of nanotube film, depositing a layer of graphene over the cleaned layer of nanotube film to produce a nanotube-graphene hybrid film, and removing impurities from a surface of the nanotube-graphene hybrid film to produce a cleaned nanotube-graphene hybrid film, wherein the hybrid film has improved electrical performance. Another method includes depositing nanotube film over a metal foil to produce a layer of nanotube film, placing the metal foil with as-deposited nanotube film in a chemical vapor deposition furnace to grow graphene on the nanotube film to form a nanotube-graphene hybrid film, and transferring the nanotube-graphene hybrid film over a substrate.
    Type: Application
    Filed: November 22, 2011
    Publication date: May 23, 2013
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Ageeth A. Bol, Bhupesh Chandra, Amal Kasry, Ahmed Maarouf, Glenn J. Martyna, George S. Tulevski
  • Publication number: 20130028823
    Abstract: A method of making a semiconductor device, includes providing a graphene sheet, creating a plurality of nanoholes in the graphene sheet to form a graphene nanomesh, the graphene nanomesh including a plurality of carbon atoms which are formed adjacent to the plurality of nanoholes, passivating a dangling bond on the plurality of carbon atoms by bonding a passivating element to the plurality of carbon atoms, and doping the passivated graphene nanomesh by bonding a dopant to the passivating element.
    Type: Application
    Filed: July 31, 2011
    Publication date: January 31, 2013
    Applicants: Egypt Nanotechnology Center, International Business Machines Corporation
    Inventors: Ahmed Abou-Kandil, Ahmed Maarouf, Glenn J. Martyna, Hisham Mohamed, Dennis M. Newns