Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an eFuse and gate structure on a triple-well and methods of manufacture. The structure includes: a substrate comprising a bounded region; a gate structure formed within the bounded region; and an eFuse formed within the bounded region and electrically connected to the gate structure.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an eFuse and gate structure on a triple-well and methods of manufacture. The structure includes: a substrate comprising a bounded region; a gate structure formed within the bounded region; and an eFuse formed within the bounded region and electrically connected to the gate structure.

Abstract: The present disclosure relates to an electrostatic discharge (ESD) clamp and, more particularly, to an ESD clamp with reduced off-state power consumption. The structure includes: one or more inverters connected to a timing circuit; a first transistor receiving an output signal from a last of the one or more inverters and an output signal from the timing circuit; a second transistor with its gate connected to the first transistor, in series; and a voltage node providing a separate voltage to a gate of the second transistor.

Abstract: The present disclosure relates to an electrostatic discharge (ESD) clamp and, more particularly, to an ESD clamp with reduced off-state power consumption. The structure includes: one or more inverters connected to a timing circuit; a first transistor receiving an output signal from a last of the one or more inverters and an output signal from the timing circuit; a second transistor with its gate connected to the first transistor, in series; and a voltage node providing a separate voltage to a gate of the second transistor.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge (ESD) protection structures for eFuses. The structure includes an electrostatic discharge (ESD) protection structure operatively coupled to an eFuse, which is structured to prevent unintentional programming of the eFuse due to an ESD event originating at a source.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge (ESD) protection structures for eFuses. The structure includes an electrostatic discharge (ESD) protection structure operatively coupled to an eFuse, which is structured to prevent unintentional programming of the eFuse due to an ESD event originating at a source.

Abstract: A design structure for systems for switching a displayed signal for a display between a plurality of signals are disclosed. In one embodiment, the design structure is embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, and includes: a system for switching a displayed signal for a display between a plurality of signals, the system including: a microcontroller; a chooser for setting a primary signal from a plurality of program-variable signals; a monitor tuner coupled to the microcontroller for tuning the primary signal during switching of the displayed signal from the primary signal to a secondary signal; a detector coupled to the monitor tuner and the microcontroller for detecting a predetermined condition in the primary signal; and a selector coupled to the microcontroller for switching the displayed signal from the secondary signal to the primary signal upon occurrence of the predetermined condition.

Abstract: Systems for switching a displayed signal for a display between a plurality of signals are disclosed. In one embodiment, the system includes a microcontroller; a chooser for choosing a primary signal from a plurality of program-variable signals at the microcontroller; a monitor tuner coupled to the microcontroller for tuning the primary signal during switching of the displayed signal from the primary signal to a secondary signal; a detector coupled to the monitor tuner and the microcontroller for detecting a predetermined condition in the primary signal; and a selector coupled to the microcontroller for switching the displayed signal from the secondary signal to the primary signal upon occurrence of the predetermined condition. A user can switch between signals such as television channels or other dedicated functions without the risk of missing a portion of the program material.

Abstract: A design structure for systems for switching a displayed signal for a display between a plurality of signals are disclosed. In one embodiment, the design structure is embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, and includes: a system for switching a displayed signal for a display between a plurality of signals, the system including: a microcontroller; a chooser for setting a primary signal from a plurality of program-variable signals; a monitor tuner coupled to the microcontroller for tuning the primary signal during switching of the displayed signal from the primary signal to a secondary signal; a detector coupled to the monitor tuner and the microcontroller for detecting a predetermined condition in the primary signal; and a selector coupled to the microcontroller for switching the displayed signal from the secondary signal to the primary signal upon occurrence of the predetermined condition.