Patents by Inventor Ahmet Ozcan

Ahmet Ozcan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicide contact formation
    Patent number: 8404589
    Abstract: A method for forming a silicide contact includes depositing a metal layer on silicon such that the metal layer intermixes with the silicon to form an intermixed region on the silicon; removing an unintermixed portion of the metal layer from the intermixed region; and annealing the intermixed region to form a silicide contact on the silicon. A semiconductor device comprising a silicide contact located over a silicon layer of the semiconductor device, the silicide contact comprising nickel (Ni) and silicon (Si) and having Ni amount equivalent to a thickness of about 21 angstroms or less.
    Type: Grant
    Filed: April 6, 2010
    Date of Patent: March 26, 2013
    Assignees: International Business Machines Corporation, Globalfoundries Inc.
    Inventors: Andrew J. Kellock, Christian Lavoie, Ahmet Ozcan, Stephen Rossnagel, Bin Yang, Zhen Zhang, Yu Zhu, Stefan Zollner
  • Silicide Contact Formation
    Publication number: 20110241213
    Abstract: A method for forming a silicide contact includes depositing a metal layer on silicon such that the metal layer intermixes with the silicon to form an intermixed region on the silicon; removing an unintermixed portion of the metal layer from the intermixed region; and annealing the intermixed region to form a silicide contact on the silicon. A semiconductor device comprising a silicide contact located over a silicon layer of the semiconductor device, the silicide contact comprising nickel (Ni) and silicon (Si) and having Ni amount equivalent to a thickness of about 21 angstroms or less.
    Type: Application
    Filed: April 6, 2010
    Publication date: October 6, 2011
    Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION, GLOBAL FOUNDRIES INC.
    Inventors: Andrew J. Kellock, Christian Lavoie, Ahmet Ozcan, Stephen Rossnagel, Bin Yang, Zhen Zhang, Yu Zhu, Stefan Zollner
  • FORMING A CARBON CONTAINING LAYER TO FACILITATE SILICIDE STABILITY IN A SILICON GERMANIUM MATERIAL
    Publication number: 20110147809
    Abstract: A method includes forming a silicon germanium layer, forming a layer comprising carbon and silicon on a top surface of the silicon germanium layer, forming a metal layer above the layer comprising carbon and silicon, and performing a thermal treatment to convert at least the layer comprising carbon and silicon to form a metal silicide layer.
    Type: Application
    Filed: December 22, 2009
    Publication date: June 23, 2011
    Inventors: Bin Yang, Devendra Sadana, Christian Lavoie, Ahmet Ozcan