Patents by Inventor Ahmetserdar DEMIRAY

Ahmetserdar DEMIRAY has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetic storage device and memory system
    Patent number: 9984736
    Abstract: According to an embodiment, a magnetic storage device includes a first, second, and third magnetoresistive effect elements, and a controller. The second and third magnetoresistive effect elements are in proximity to the first magnetoresistive effect element. When the controller receives an command which is associated with an operation of writing a first data item to the first magnetoresistive effect element, the controller is configured to perform a first operation of writing the first data item to the first magnetoresistive effect element, and a second operation of writing a second data item different from the first data item to the second magnetoresistive effect element and the third magnetoresistive effect element.
    Type: Grant
    Filed: February 6, 2017
    Date of Patent: May 29, 2018
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Ahmetserdar Demiray, Masahiko Nakayama, Hiroshi Watanabe
  • MAGNETIC STORAGE DEVICE AND MEMORY SYSTEM
    Publication number: 20180053542
    Abstract: According to an embodiment, a magnetic storage device includes a first, second, and third magnetoresistive effect elements, and a controller. The second and third magnetoresistive effect elements are in proximity to the first magnetoresistive effect element. When the controller receives an command which is associated with an operation of writing a first data item to the first magnetoresistive effect element, the controller is configured to perform a first operation of writing the first data item to the first magnetoresistive effect element, and a second operation of writing a second data item different from the first data item to the second magnetoresistive effect element and the third magnetoresistive effect element.
    Type: Application
    Filed: February 6, 2017
    Publication date: February 22, 2018
    Applicant: Toshiba Memory Corporation
    Inventors: Ahmetserdar DEMIRAY, Masahiko NAKAYAMA, Hiroshi WATANABE