Patents by Inventor Ahn N. Vu

Ahn N. Vu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multi spectral sensor
    Patent number: 8071410
    Abstract: A light sensor having a light conversion element between first and second electrodes is disclosed. The light conversion element includes a body of semiconductor material having first and second surfaces. The body of semiconductor material is of a first conductivity type and has doping elements in a concentration gradient that creates a first electrostatic field having a magnitude that varies monotonically from the first surface to the second surface. A bias circuit applies a variable potential between the first and second electrodes to create a second electrostatic field having a direction opposite to that of the first electrostatic field and a magnitude determined by the potential. One of the electrodes is transparent to light in a predetermined band of wavelengths. The body of semiconductor material can include an epitaxial body having a monotonically increasing concentration of a doping element as a function of the distance from one the surfaces.
    Type: Grant
    Filed: December 14, 2009
    Date of Patent: December 6, 2011
    Assignee: BAE Systems Imaging Solutions Inc.
    Inventors: David D. Wen, Xinqiao Liu, Ahn N. Vu, Steven Kiyoshi Onishi
  • Multi Spectral Sensor
    Publication number: 20100091166
    Abstract: A light sensor having a light conversion element between first and second electrodes is disclosed. The light conversion element includes a body of semiconductor material having first and second surfaces. The body of semiconductor material is of a first conductivity type and has doping elements in a concentration gradient that creates a first electrostatic field having a magnitude that varies monotonically from the first surface to the second surface. A bias circuit applies a variable potential between the first and second electrodes to create a second electrostatic field having a direction opposite to that of the first electrostatic field and a magnitude determined by the potential. One of the electrodes is transparent to light in a predetermined band of wavelengths. The body of semiconductor material can include an epitaxial body having a monotonically increasing concentration of a doping element as a function of the distance from one the surfaces.
    Type: Application
    Filed: December 14, 2009
    Publication date: April 15, 2010
    Inventors: David D. Wen, Xinqiao Liu, Ahn N. Vu, Steven Kiyoshi Onishi
  • Multi spectral sensor
    Patent number: 7655493
    Abstract: A light sensor having a light conversion element between first and second electrodes is disclosed. The light conversion element includes a body of semiconductor material having first and second surfaces. The body of semiconductor material is of a first conductivity type and has doping elements in a concentration gradient that creates a first electrostatic field having a magnitude that varies monotonically from the first surface to the second surface. A bias circuit applies a variable potential between the first and second electrodes to create a second electrostatic field having a direction opposite to that of the first electrostatic field and a magnitude determined by the potential. One of the electrodes is transparent to light in a predetermined band of wavelengths. The body of semiconductor material can include an epitaxial body having a monotonically increasing concentration of a doping element as a function of the distance from one the surfaces.
    Type: Grant
    Filed: July 14, 2005
    Date of Patent: February 2, 2010
    Assignee: Fairchild Imaging, Inc
    Inventors: David D. Wen, Xinqiao Liu, Ahn N. Vu, Steven Kiyoshi Onishi