Abstract: An apparatus for grouping work request contents selected from a work request content list including one or more processors and a memory storing instructions, an execution of the instructions configuring the one or more processors to display a work request content list, the work request content list including work request contents associated with a function for requesting handling by a user are enumerated, receive a user selection of two or more work request contents from among a plurality of work request contents enumerated in the displayed work request content list, and group two or more selected work request contents according to a classification criteria.

Abstract: A semiconductor chip includes; an intermetal dielectric (IMD) layer on a substrate, an uppermost insulation layer on the IMD layer, the uppermost insulation layer having a dielectric constant different from a dielectric constant of the IMD layer, a metal wiring in the IMD layer, the metal wiring including a via contact and a metal pattern, a metal pad in the uppermost insulation layer, the metal pad being electrically connected to the metal wiring, and a bump pad on the metal pad. An interface portion between the IMD layer and the uppermost insulation layer is disposed at a height of a portion between an upper surface and a lower surface of an uppermost metal pattern in the IMD layer.

Abstract: A semiconductor chip includes; an intermetal dielectric (IMD) layer on a substrate, an uppermost insulation layer on the IMD layer, the uppermost insulation layer having a dielectric constant different from a dielectric constant of the IMD layer, a metal wiring in the IMD layer, the metal wiring including a via contact and a metal pattern, a metal pad in the uppermost insulation layer, the metal pad being electrically connected to the metal wiring, and a bump pad on the metal pad. An interface portion between the IMD layer and the uppermost insulation layer is disposed at a height of a portion between an upper surface and a lower surface of an uppermost metal pattern in the IMD layer.