Abstract: A thin film transistor substrate presented herein includes a substrate, a first gate electrode on the substrate, the first gate electrode including a first portion and a second portion, an active layer on the first gate electrode, a second gate electrode on the active layer, the second gate electrode overlapping at least the first portion of the first gate electrode, a source electrode connected to a first side of the active layer, and a drain electrode connected to a second side of the active layer, wherein the first portion overlaps the second gate electrode, the second portion protrudes from an end of the first portion in a direction towards the source electrode or the drain electrode, and a thickness of the second portion is smaller than a thickness of the first portion. A display device includes the thin film transistor substrate as presented herein.

Abstract: A thin film transistor for a display device can include an active layer disposed on a substrate, a gate electrode overlapping with the active layer, a source electrode electrically connected to the active layer, a drain electrode electrically connected to the active layer, and at least one hole in the active layer, in which the at least one hole at least partially overlaps with an edge of the gate electrode. Also, the at least one hole in the active layer can control or block diffusion of a dopant within the active layer.

Abstract: Disclosed herein are a method of forming a transition metal dichalcogenide thin film and a method of manufacturing a device including the same. The method of forming a transition metal dichalcogenide thin film includes: depositing a transition metal dichalcogenide thin film on a substrate; and heat-treating the deposited transition metal dichalcogenide thin film.

Abstract: Disclosed herein are a method of forming a transition metal dichalcogenide thin film and a method of manufacturing a device including the same. The method of forming a transition metal dichalcogenide thin film includes: providing a substrate in a reaction chamber; depositing a transition metal dichalcogenide thin film on the substrate using a sputtering process that uses a transition metal precursor and a chalcogen precursor and is performed at a first temperature; and injecting the chalcogen precursor in a gas state and heat-treating the transition metal dichalcogenide thin film at a second temperature that is higher than the first temperature. The substrate may include a sapphire substrate, a silicon oxide (SiO2) substrate, a nanocrystalline graphene substrate, or a molybdenum disulfide (MoS2) substrate.

Abstract: Disclosed herein are a method of forming a transition metal dichalcogenide thin film and a method of manufacturing a device including the same. The method of forming a transition metal dichalcogenide thin film includes: providing a substrate in a reaction chamber; depositing a transition metal dichalcogenide thin film on the substrate using a sputtering process that uses a transition metal precursor and a chalcogen precursor and is performed at a first temperature; and injecting the chalcogen precursor in a gas state and heat-treating the transition metal dichalcogenide thin film at a second temperature that is higher than the first temperature. The substrate may include a sapphire substrate, a silicon oxide (SiO2) substrate, a nanocrystalline graphene substrate, or a molybdenum disulfide (MoS2) substrate.

Abstract: Disclosed herein are a method of forming a transition metal dichalcogenide thin film and a method of manufacturing a device including the same. The method of forming a transition metal dichalcogenide thin film includes: providing a substrate in a reaction chamber; depositing a transition metal dichalcogenide thin film on the substrate using a sputtering process that uses a transition metal precursor and a chalcogen precursor and is performed at a first temperature; and injecting the chalcogen precursor in a gas state and heat-treating the transition metal dichalcogenide thin film at a second temperature that is higher than the first temperature. The substrate may include a sapphire substrate, a silicon oxide (SiO2) substrate, a nanocrystalline graphene substrate, or a molybdenum disulfide (MoS2) substrate.

Abstract: Disclosed herein are a method of forming a transition metal dichalcogenide thin film and a method of manufacturing a device including the same. The method of forming a transition metal dichalcogenide thin film includes: depositing a transition metal dichalcogenide thin film on a substrate; and heat-treating the deposited transition metal dichalcogenide thin film.

Abstract: Disclosed herein are a method of forming a transition metal dichalcogenide thin film and a method of manufacturing a device including the same. The method of forming a transition metal dichalcogenide thin film includes: providing a substrate in a reaction chamber; depositing a transition metal dichalcogenide thin film on the substrate using a sputtering process that uses a transition metal precursor and a chalcogen precursor and is performed at a first temperature; and injecting the chalcogen precursor in a gas state and heat-treating the transition metal dichalcogenide thin film at a second temperature that is higher than the first temperature. The substrate may include a sapphire substrate, a silicon oxide (SiO2) substrate, a nanocrystalline graphene substrate, or a molybdenum disulfide (MoS2) substrate.

Abstract: A solar cell module having a light guide member and a method of fabricating the same are provided. The solar cell module includes a light guide member including a light receiving surface for receiving external light and a side surface formed to be inclined to or perpendicular to the light receiving surface, and at least one solar cell mounted on the side surface, the at least one solar cell being configured to receive the external light through the light guide member and perform photoelectric transformation on the received external light. The light guide member includes a plurality of air pores, and the light guide member guides the received external light to a direction of the side surface. The solar cell module may be configured in various manners according to embodiments.