Patents by Inventor Ai-Hwa Lim

Ai-Hwa Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9198303
    Abstract: A manufacturing method for a multi-layer circuit board includes the following steps. Firstly, two core layers are compressed to form a substrate having two surfaces opposite to each other. Then, a via connecting the surfaces is formed. A patterned circuit layer including a concentric-circle pattern is then formed on each surface by using the via as an alignment target. Next, a first stacking layer is formed on each surface. Then, a first through hole penetrating regions of the first stacking layer and the substrate where a first concentric circle from the center of the concentric-circle pattern is orthogonally projected thereon is formed. A second stacking layer is then formed on each first stacking layer. Afterward, a second through hole penetrating regions of the first, the second stacking layers and the substrate where a second concentric circle from the center of the concentric-circle pattern is orthogonally projected thereon is formed.
    Type: Grant
    Filed: November 7, 2013
    Date of Patent: November 24, 2015
    Assignee: Unimicron Technology Corp.
    Inventors: Pei-Chang Huang, Cheng-Po Yu, Han-Pei Huang, Ai-Hwa Lim
  • Publication number: 20150121693
    Abstract: A manufacturing method for a multi-layer circuit board includes the following steps. Firstly, two core layers are compressed to form a substrate having two surfaces opposite to each other. Then, a via connecting the surfaces is formed. A patterned circuit layer including a concentric-circle pattern is then formed on each surface by using the via as an alignment target. Next, a first stacking layer is formed on each surface. Then, a first through hole penetrating regions of the first stacking layer and the substrate where a first concentric circle from the center of the concentric-circle pattern is orthogonally projected thereon is formed. A second stacking layer is then formed on each first stacking layer. Afterward, a second through hole penetrating regions of the first, the second stacking layers and the substrate where a second concentric circle from the center of the concentric-circle pattern is orthogonally projected thereon is formed.
    Type: Application
    Filed: November 7, 2013
    Publication date: May 7, 2015
    Applicant: Unimicron Technology Corp.
    Inventors: Pei-Chang Huang, Cheng-Po Yu, Han-Pei Huang, Ai-Hwa Lim