Patents by Inventor Ai Ji WANG

Ai Ji WANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure and fabrication method
    Patent number: 11682586
    Abstract: A semiconductor structure is provided. The semiconductor structure includes: a base substrate having an opening; and a first gate layer formed in the opening. In the first gate layer closes a top of the opening and the first gate layer includes at least one void. The semiconductor structure further includes a second gate layer formed on the first gate layer. An atomic radius of the material of the second gate layer is smaller than gaps among atoms of the material of the first gate layer and the void is filled by atoms of one of the material of the first gate layer and the material of the second gate layer.
    Type: Grant
    Filed: December 14, 2021
    Date of Patent: June 20, 2023
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: Jian Qiang Liu, Chao Tian, Zi Rui Liu, Ching Yun Chang, Ai Ji Wang
  • SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD
    Publication number: 20220108925
    Abstract: A semiconductor structure is provided. The semiconductor structure includes: a base substrate having an opening; and a first gate layer formed in the opening. In the first gate layer closes a top of the opening and the first gate layer includes at least one void. The semiconductor structure further includes a second gate layer formed on the first gate layer. An atomic radius of the material of the second gate layer is smaller than gaps among atoms of the material of the first gate layer and the void is filled by atoms of one of the material of the first gate layer and the material of the second gate layer.
    Type: Application
    Filed: December 14, 2021
    Publication date: April 7, 2022
    Inventors: Jian Qiang LIU, Chao TIAN, Zi Rui LIU, Ching Yun CHANG, Ai Ji WANG
  • Semiconductor structure and fabrication method
    Patent number: 11227803
    Abstract: Semiconductor structures and fabrication methods are provided. An exemplary fabrication method includes providing a base substrate having an opening and forming a first gate layer in the opening. The first gate layer closes a top of the opening and includes a void. The method also includes forming a second gate layer on the first gate layer. An atomic radius of a material of the second gate layer is smaller than gaps among the atoms of the material of the first gate layer. Further, the method includes performing a thermal annealing process to cause atoms of the material of the second layer to pass through the first gate layer to fill the void.
    Type: Grant
    Filed: June 25, 2019
    Date of Patent: January 18, 2022
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: Jian Qiang Liu, Chao Tian, Zi Rui Liu, Ching Yun Chang, Ai Ji Wang
  • SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD
    Publication number: 20190393093
    Abstract: Semiconductor structures and fabrication methods are provided. An exemplary fabrication method includes providing a base substrate having an opening and forming a first gate layer in the opening. The first gate layer closes a top of the opening and includes a void. The method also includes forming a second gate layer on the first gate layer. An atomic radius of a material of the second gate layer is smaller than gaps among the atoms of the material of the first gate layer. Further, the method includes performing a thermal annealing process to cause atoms of the material of the second layer to pass through the first gate layer to fill the void.
    Type: Application
    Filed: June 25, 2019
    Publication date: December 26, 2019
    Inventors: Jian Qiang LIU, Chao TIAN, Zi Rui LIU, Ching Yun CHANG, Ai Ji WANG