Abstract: The present invention provides a mutant beetle luciferase and the like, having mutation in which the amino acid corresponding to valine at position 288 in the amino acid sequence of wild-type Photinus pyralis luciferase is isoleucine, leucine or phenylalanine, mutation in which the amino acid corresponding to leucine at position 376 in the aforementioned sequence is proline, mutation in which the amino acid corresponding to glutamic acid at position 455 in the aforementioned sequence is valine, alanine, serine, leucine, isoleucine or phenylalanine, or mutation in which the amino acid corresponding to glutamic acid at position 488 in the aforementioned sequence is valine, alanine, serine, leucine, isoleucine or phenylalanine, in the amino acid sequence encoding a wild-type beetle luciferase, and characterized in that a luminescence intensity due to a luciferin-luciferase luminescence reaction in a 0.9% by mass NaCl solution is 50% or more of that in a NaCl-free solution.

Abstract: The present invention provides a mutant beetle luciferase and the like, having mutation in which the amino acid corresponding to valine at position 288 in the amino acid sequence of wild-type Photinus pyralis luciferase is isoleucine, leucine or phenylalanine, mutation in which the amino acid corresponding to leucine at position 376 in the aforementioned sequence is proline, mutation in which the amino acid corresponding to glutamic acid at position 455 in the aforementioned sequence is valine, alanine, serine, leucine, isoleucine or phenylalanine, or mutation in which the amino acid corresponding to glutamic acid at position 488 in the aforementioned sequence is valine, alanine, serine, leucine, isoleucine or phenylalanine, in the amino acid sequence encoding a wild-type beetle luciferase, and characterized in that a luminescence intensity due to a luciferin-luciferase luminescence reaction in a 0.9% by mass NaCl solution is 50% or more of that in a NaCl-free solution.

Abstract: According to one embodiment, a pixel array unit includes a matrix of first and second two-pixel green photoelectric conversion layers that are arranged obliquely with respect to a column direction, a two-pixel blue photoelectric conversion that is arranged adjacent to the first and second green photoelectric conversion layers, and a red photoelectric conversion layer that overlaps the blue photoelectric conversion layer in a depth direction. A green filter that is provided consecutively for two pixels on the first and second green photoelectric conversion layers, and a magenta filter or a white filter is provided consecutively for two pixels on the blue photoelectric conversion layer.

Abstract: According to one embodiment, a solid-state image pickup device includes a photoelectric converter, transfer, reset and amplifier transistors and a floating diffusion layer formed on a semiconductor substrate. The photoelectric converter coverts incident light to a signal charge. The transfer transistor transfers the signal charge converted by the photoelectric converter. The floating diffusion layer stores the signal charge transferred by the transfer transistor. The reset transistor resets the signal charge stored in the floating diffusion layer. The amplifier transistor amplifies the signal charge stored in the floating diffusion layer. Source and drain regions of the reset transistor, and its channel region are formed in an L-shape on the semiconductor substrate.

Abstract: According to one embodiment, a solid-state image pickup device includes a photoelectric converter, transfer, reset and amplifier transistors and a floating diffusion layer formed on a semiconductor substrate. The photoelectric converter coverts incident light to a signal charge. The transfer transistor transfers the signal charge converted by the photoelectric converter. The floating diffusion layer stores the signal charge transferred by the transfer transistor. The reset transistor resets the signal charge stored in the floating diffusion layer. The amplifier transistor amplifies the signal charge stored in the floating diffusion layer. Source and drain regions of the reset transistor, and its channel region are formed in an L-shape on the semiconductor substrate.