Patents by Inventor Aiden Martin

Aiden Martin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electron beam-induced etching
    Patent number: 10304658
    Abstract: Beam-induced etching uses a work piece maintained at a temperature near the boiling point of a precursor material, but the temperature is sufficiently high to desorb reaction byproducts. In one embodiment, NF3 is used as a precursor gas for electron-beam induced etching of silicon at a temperature below room temperature.
    Type: Grant
    Filed: July 17, 2015
    Date of Patent: May 28, 2019
    Assignee: FEI Company
    Inventors: Aiden Martin, Milos Toth
  • Charged particle beam processing using process gas and cooled surface
    Patent number: 9799490
    Abstract: A cold trap is provided to reduce contamination gases that react with the beam during operations that use a process gas. The cold trap is set to a temperature that condenses the contamination gas but does not condense the process gas. Cold traps may be used in the sample chamber and in the gas line.
    Type: Grant
    Filed: March 31, 2015
    Date of Patent: October 24, 2017
    Assignee: FEI Company
    Inventors: Aiden Martin, Geoff McCredie, Milos Toth
  • CHARGED PARTICLE BEAM PROCESSING USING PROCESS GAS AND COOLED SURFACE
    Publication number: 20160293380
    Abstract: A cold trap is provided to reduce contamination gases that react with the beam during operations that use a process gas. The cold trap is set to a temperature that condenses the contamination gas but does not condense the process gas. Cold traps may be used in the sample chamber and in the gas line.
    Type: Application
    Filed: March 31, 2015
    Publication date: October 6, 2016
    Applicant: FEI Company
    Inventors: Aiden Martin, Geoff McCredie, Milos Toth
  • ELECTRON BEAM-INDUCED ETCHING
    Publication number: 20160020068
    Abstract: Beam-induced etching uses a work piece maintained at a temperature near the boiling point of a precursor material, but the temperature is sufficiently high to desorb reaction byproducts. In one embodiment, NF3 is used as a precursor gas for electron-beam induced etching of silicon at a temperature below room temperature.
    Type: Application
    Filed: July 17, 2015
    Publication date: January 21, 2016
    Inventors: Aiden Martin, Milos Toth
  • Electron beam-induced etching
    Patent number: 9123506
    Abstract: Beam-induced etching uses a work piece maintained at a temperature near the boiling point of a precursor material, but the temperature is sufficiently high to desorb reaction byproducts. In one embodiment, NF3 is used as a precursor gas for electron-beam induced etching of silicon at a temperature below room temperature.
    Type: Grant
    Filed: June 10, 2013
    Date of Patent: September 1, 2015
    Assignee: FEI COMPANY
    Inventors: Aiden Martin, Milos Toth
  • Electron Beam-Induced Etching
    Publication number: 20140363978
    Abstract: Beam-induced etching uses a work piece maintained at a temperature near the boiling point of a precursor material, but the temperature is sufficiently high to desorb reaction byproducts. In one embodiment, NF3 is used as a precursor gas for electron-beam induced etching of silicon at a temperature below room temperature.
    Type: Application
    Filed: June 10, 2013
    Publication date: December 11, 2014
    Inventors: Aiden Martin, Milos Toth