Abstract: A blowing port of an apparatus for washing semiconductor materials, has a plurality of passages defined within the duct of the blowing port. At least the upper portion of each passage is formed convergently to its end. The end of each passage of the blowing port forms a transverse slit so as to form laminar flow of clean air flowing substantially horizontally from the blowing port to an opposite suction port. Such laminar air flow covers the respective washing tanks, and thus it prevents vapor generated in chemical washing tanks from entering final washing tanks. Accordingly semiconductor materials washed in final washing tank or tanks are not badly influenced with the described vapor.

Abstract: An over-flow tank for a semiconductor wafer washing apparatus includes a pair of opposed extensions integrally formed on a pair of opposed side walls of the tank. One of the extensions is provided with pipes and/or other devices. This form of attachment prevents formation of a stepped portion on which dust may accumulate. The extensions also act to guide the flow of clean air over the tanks, so that vapor formed in a chemical liquid tank in one row of such tanks is prevented from entering a pure water tank in an adjacent row.

Abstract: A spin drier comprising a rotating rotor for spin-drying semiconductor materials, in which the rotor is made of aluminum to lessen the weight of the rotor and has therein reinforcing rods fastened between the upper ring and the base plate of the rotor in order to bring higher strength of the rotor. Such arrangements enable a highly accelerated starting in rotation of the rotor. Due to such highly accelerated starting, the spin drier can remove water droplets stuck on wafers completely so as to obviate occurrence of water marks.

Abstract: This disclosure includes an improvement relating to a square basin for applying a treatment such as etching, development, plating or washing to surfaces of semiconductor materials housed in a carrier which is supported in the basin, by a treatment liquid introduced upwardly through a passage formed in the bottom portion of the basin and then overflown at a top periphery of the basin. The improvement exists in the formation of two rows of holes in the bottom portion of the basin. These holes are adapted to discharge a treatment liquid in an inward-upward direction so as to cause a up and down swirling in the treatment liquid in the basin. This obviates local or partial stagnations of treatment liquid in the basin and effects a treatment.