Abstract: A method for smelting low-phosphorus high-manganese steel based on reduction dephosphorization of ferromanganese is provided in the present application, relating to the technical field of high-manganese steel smelting, where the dephosphorization of ferromanganese is carried out under reducing atmosphere conditions through mediate-frequency induction furnace to obtain molten ferromanganese with lower phosphorus content, which is subsequently mixed with low phosphorus molten steel obtained by smelting in oxidative period of electric arc furnace in LF ladle refining furnace to make the Mn content of steel reach the requirement of high-manganese steel, and smelting is carried out under the condition of reducing atmosphere by adjusting the composition and temperature of the molten steel to meet the requirements of the target composition of the steel grade before tapping the steel.

Abstract: The present invention discloses an optical encoder assembly composed of an encoder mechanical unit and a photoelectric unit, wherein the encoder mechanical unit comprises a base (1) and a cover (2), the photoelectric unit is a circuit board (4) mounted with an optical module (3), the optical module (3) including a light-emitting element (31) and a photosensitive element (32), the encoder mechanical unit is combined with the circuit board (4) as a photoelectric unit via the base (1), and the encoder mechanical unit cooperates with the photoelectric unit to generate photoelectric signals. This encoder adopts a light path module (51) with an innovative structure, and uses a light-blocking turntable (5) to cooperate with the light path module(51)to realize change of the light path. This structure ingeniously simplifies a light path switch module such that the structure is lighter and thinner, the layout is more reasonable. The present application has a compact structure, and-makes full use of space.

Abstract: A processing apparatus for semiconductor work pieces and related methodology is disclosed and which includes a processing chamber having an internal cavity, and which has a plurality of rotatable processing stations positioned therein and wherein the rotatable processing stations each process a semiconductor work piece.

Abstract: Provided is a new catalyst capable of removing carbon monoxide economically without adding particular reaction gas externally. Also provided are a process for producing and an apparatus using such a catalyst. Impregnation of a Ni—Al composite oxide precursor of a nonstoichiometric composition prepared by the solution-spray plasma technique with a ruthenium salt to be supported and performing reduction treatment allows CO methanation reaction to selectively proceed even in the high-temperature range in which CO2 methanation reaction and reverse water-gas-shift reaction proceed preferentially with conventional catalysts. Selective CO methanation reaction occurs reproducibly with another Ni—Al composite oxide precursor or an additive metallic species.

Abstract: A S-shaped visible hard intubating stylet comprises a LCD display, a handler and a hard stylet which are connected successively; the hard stylet has an outer end provided with a camera and a light emitter which are connecting to the LCD display, respectively; the hard stylet is formed to comprise, from one end to the other end, successively, a first linear section, an arc-shaped section, a circular arc-shaped section and a second linear section; a tangential direction of a tail end of the circular arc-shaped section that is adjacent to the arc-shaped section, and an axis direction of the handler, have an included angle which is ranging from no 20°; the circular arc-shaped section has a circular arc radius which is ranging from 45 mm to 75 mm; the circular arc-shaped section has a circular arc corresponding to a central angle which is ranging from 60° to 80°; the second linear section and the axis direction of the handler have an included angle which is ranging from 50° to 70°.

Abstract: A semiconductor processing system and related methodology is disclosed and which includes a processing chamber having an internal cavity and a transfer port; a transfer chamber which is positioned adjacent to the processing chamber; and a transfer apparatus having at least two extendible arms which are positioned within the transfer chamber, and wherein each of the extendible arms carry a semiconductor work piece into and out of the processing chamber by way of the transfer port, and wherein the at least two extendible arms are selectively vertically moveable, and further are each selectively moveable in the direction of the transfer port.

Abstract: A plasma chamber is constructed to have a chamber body defining therein a plurality of process stations. A plurality of rotating substrate holders are each situated in one of the process stations and a plurality of in-situ plasma generation regions are each provided above one of the substrate holders. A plurality of quasi-remote plasma generation regions are each provided above a corresponding in-situ plasma generation region and being in gaseous communication with the corresponding in-situ plasma generation region. An RF energy source is coupled to each of the quasi-remote plasma generation regions.

Abstract: Provided is a new catalyst capable of removing carbon monoxide economically without adding particular reaction gas externally. Also provided are a process for producing and an apparatus using such a catalyst. Impregnation of a Ni—Al composite oxide precursor of a nonstoichiometric composition prepared by the solution-spray plasma technique with a ruthenium salt to be supported and performing reduction treatment allows CO methanation reaction to selectively proceed even in the high-temperature range in which CO2 methanation reaction and reverse water-gas-shift reaction proceed preferentially with conventional catalysts. Selective CO methanation reaction occurs reproducibly with another Ni—Al composite oxide precursor or an additive metallic species.

Abstract: A processing apparatus for semiconductor work pieces and related methodology is disclosed and which includes a processing chamber having an internal cavity, and which has a plurality of rotatable processing stations positioned therein and wherein the rotatable processing stations each process a semiconductor work piece.

Abstract: In one embodiment, a method for forming a tungsten barrier material on a substrate is provided which includes depositing a tungsten layer on a substrate during a vapor deposition process and exposing the substrate sequentially to a tungsten precursor and a nitrogen precursor to form a tungsten nitride layer on the tungsten layer. Some examples provide that the tungsten layer may be deposited by sequentially exposing the substrate to the tungsten precursor and a reducing gas (e.g., diborane or silane) during an atomic layer deposition process. The tungsten layer may have a thickness of about 50 ? or less and tungsten nitride layer may have an electrical resistivity of about 380 ??-cm or less. Other examples provide that a tungsten bulk layer may be deposited on the tungsten nitride layer by a chemical vapor deposition process.

Abstract: A semiconductor work piece processing reactor is described and which includes a processing chamber defining a deposition region; a pedestal which supports and moves a semiconductor work piece to be processed within the deposition region of the processing chamber; and a gas distribution assembly mounted within the processing chamber and which defines first and second reactive gas passageways which are separated from each other, and which deliver two reactant gases to a semiconductor work piece which is positioned near the gas distribution assembly.

Abstract: A method of forming a silicon nitride layer is described. According to the present invention, a silicon nitride layer is deposited by thermally decomposing a silicon/nitrogen containing source gas or a silicon containing source gas and a nitrogen containing source gas at low deposition temperatures to form a silicon nitride layer. The thermally deposited silicon nitride layer is then treated with hydrogen radicals to form a treated silicon nitride layer.

Abstract: A plasma chamber is constructed to have a chamber body defining therein a plurality of process stations. A plurality of rotating substrate holders are each situated in one of the process stations and a plurality of in-situ plasma generation regions are each provided above one of the substrate holders. A plurality of quasi-remote plasma generation regions are each provided above a corresponding in-situ plasma generation region and being in gaseous communication with the corresponding in-situ plasma generation region. An RF energy source is coupled to each of the quasi-remote plasma generation regions.

Abstract: In one embodiment, a method for forming a tungsten barrier material on a substrate is provided which includes depositing a tungsten layer on a substrate during a vapor deposition process and exposing the substrate sequentially to a tungsten precursor and a nitrogen precursor to form a tungsten nitride layer on the tungsten layer. Some examples provide that the tungsten layer may be deposited by sequentially exposing the substrate to the tungsten precursor and a reducing gas (e.g., diborane or silane) during an atomic layer deposition process. The tungsten layer may have a thickness of about 50 ? or less and tungsten nitride layer may have an electrical resistivity of about 380 ??-cm or less. Other examples provide that a tungsten bulk layer may be deposited on the tungsten nitride layer by a chemical vapor deposition process.