Patents by Inventor Aihua (Steven) Chen

Aihua (Steven) Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for forming a high quality low temperature silicon nitride layer
    Patent number: 7972663
    Abstract: A method of forming a silicon nitride layer is described. According to the present invention, a silicon nitride layer is deposited by thermally decomposing a silicon/nitrogen containing source gas or a silicon containing source gas and a nitrogen containing source gas at low deposition temperatures (e.g., less than 550° C.) to form a silicon nitride layer. The thermally deposited silicon nitride layer is then treated with hydrogen radicals to form a treated silicon nitride layer.
    Type: Grant
    Filed: December 19, 2003
    Date of Patent: July 5, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Shulin Wang, Errol Antonio C. Sanchez, Aihua (Steven) Chen
  • Methods for forming silicon comprising films using hexachlorodisilane in a single-wafer deposion chamber
    Publication number: 20040086640
    Abstract: A silicon comprising film and its method of fabrication is described. The silicon comprising film is grown on a substrate. A hexachlorodisilane (HCD) source gas is one of the reactant species used to form the silicon comprising film. The silicon comprising film is formed under a pressure between 10 Torr and 350 Torr.
    Type: Application
    Filed: November 4, 2002
    Publication date: May 6, 2004
    Applicant: Applied Materials, Inc.
    Inventors: Lee Luo, R. Suryanarayanan Iyer, Janardhanan Anand Subramony, Errol Antonio C. Sanchez, Xiaoliang Jin, Aihua Steven Chen, Chang-Lian Yan, Nobuo Tokai, Yuji Maeda, Randhir P. Singh Thakur
  • Method of annealing an oxide film
    Publication number: 20030124873
    Abstract: The present invention is a method of annealing an oxide film. According to the present invention, an oxide film is deposited over a substrate. The oxide film is then annealed by exposing the oxide film to an ambient containing atomic oxygen for a predetermined period of time. In an embodiment of the present invention, the ambient containing atomic oxygen (O) is formed in the chamber by reacting a hydrogen containing gas and an oxygen containing gas together. In another embodiment of the present invention, the ambient containing atomic oxygen (O) is formed by decomposing N2O.
    Type: Application
    Filed: December 28, 2001
    Publication date: July 3, 2003
    Inventors: Guangcai Xing, Lee Luo, Aihua (Steven) Chen, Errol Antonio C. Sanchez, Christopher G. Quentin, Kuan-Ting (James) Lin, Shih-Che (Jeff) Lin