Abstract: Semiconductor substrates electroplated with nickel-palladium alloy consisting of above 50 to 80 atomic percent nickel and below 50 to 20 atomic percent palladium exhibit excellent thermal stability.

Abstract: A Schottky barrier semiconductor device comprising a semiconductor substrate having a hole in part of one of its main surfaces, a surface protecting film formed on the main surface and having a flange-like part extending over the edge of the hole, and a barrier metal formed on the entire wall of the hole including areas underneath the flange-like portion. The barrier metal film thus formed prevents concentration of an electric field at the edge of the interface between the barrier metal and the semiconductor substrate, thereby improving the reverse breakdown characteristics.

Abstract: A nickel-palladium alloy in the form of a layer is contacted by one portion of one main face of a semiconductor substrate to form a Schottky barrier. A gold layer is disposed upon the nickel-palladium layer and an electrically insulating film is disposed on the remaining portion of the one main substrate face to contact and surround both layers. The film has a thickness equal to or greater than the sum of thicknesses of both layers.BACKGROUND OF THE INVENTIONThis invention relates to a semiconductor device including a Schottky barrier and more particularly to means for thermally stabilizing electric characteristics of a Schottky barrier included in a semiconductor device.It is well known that the Schottky barrier is formed in semiconductors adjacent those portions thereof contacted by metallic members and there have been previously propsed many types of semiconductor devices utilizing the electric characteristics of the Schottky barrier.