Abstract: A photoelectric conversion device includes photoelectric conversion elements and element isolation regions, both of which are arranged on a semiconductor substrate. The photoelectric conversion device further includes a plurality of interlayer insulation layers including a first interlayer insulation layer arranged nearest to the semiconductor substrate, and a second interlayer insulation layer arranged to cover the first interlayer insulation layer. Gaps extending from at least the second interlayer insulation layer to the first interlayer insulation layer are arranged in first and second interlayer insulation layer regions corresponding to the element isolation regions.

Abstract: A photoelectric converter includes a substrate, photoelectric converting elements formed in the substrate and each having a light-receiving surface, an antireflection film arranged above at least a part of the light-receiving surface of each photoelectric converting element, an element isolation region including an insulator, a plurality of transistors including read transistors configured to read electric charges of the photoelectric converting elements, an interlayer insulating film arranged above the photoelectric conversion elements and the read transistors, and contacts electrically connected to active regions of the transistors. The antireflection film is arranged above the element isolation region and the active region connected to each contact. The antireflection film serves as an etch stop film when the interlayer insulating film is etched.

Abstract: A photoelectric conversion device includes photoelectric conversion elements and element isolation regions, both of which are arranged on a semiconductor substrate. The photoelectric conversion device further includes a plurality of interlayer insulation layers including a first interlayer insulation layer arranged nearest to the semiconductor substrate, and a second interlayer insulation layer arranged to cover the first interlayer insulation layer. Gaps extending from at least the second interlayer insulation layer to the first interlayer insulation layer are arranged in first and second interlayer insulation layer regions corresponding to the element isolation regions.

Abstract: A photoelectric converter includes a substrate, photoelectric converting elements formed in the substrate and each having a light-receiving surface, an antireflection film arranged above at least a part of the light-receiving surface of each photoelectric converting element, an element isolation region including an insulator, a plurality of transistors including read transistors configured to read electric charges of the photoelectric converting elements, an interlayer insulating film arranged above the photoelectric conversion elements and the read transistors, and contacts electrically connected to active regions of the transistors. The antireflection film is arranged above the element isolation region and the active region connected to each contact. The antireflection film serves as an etch stop film when the interlayer insulating film is etched.