Abstract: A method for manufacturing a semiconductor device includes: forming an insulating film on a surface of a semiconductor layer of a semiconductor substrate; forming a contact hole in the insulating film; forming a conductor material on the insulating film to be in contact with the semiconductor layer through the contact hole; and patterning the conductor material using an alignment key included in the conductor material.

Abstract: A silicon carbide semiconductor device includes a substrate, a drift layer disposed above the substrate, a base region disposed above the drift layer, a source region disposed above the base region, a gate trench formed deeper than the base region from a surface of the source region, a gate insulating film covering an inner wall surface of the gate trench, a gate electrode disposed on the gate insulating film, an interlayer insulating film covering the gate electrode and the gate insulating film and having a contact hole, a source electrode brought in ohmic contact with the source region through the contact hole, and a drain electrode disposed to a rear surface of the substrate. The source region has a lower impurity concentration on a side close to the base region than on a surface side brought in ohmic contact with the source region.

Abstract: A silicon carbide semiconductor device includes a substrate, a drift layer disposed above the substrate, a base region disposed above the drift layer, a source region disposed above the base region, a gate trench formed deeper than the base region from a surface of the source region, a gate insulating film covering an inner wall surface of the gate trench, a gate electrode disposed on the gate insulating film, an interlayer insulating film covering the gate electrode and the gate insulating film and having a contact hole, a source electrode brought in ohmic contact with the source region through the contact hole, and a drain electrode disposed to a rear surface of the substrate. The source region has a lower impurity concentration on a side close to the base region than on a surface side brought in ohmic contact with the source region.

Abstract: A silicon carbide semiconductor device includes a substrate, a drift layer disposed above the substrate, a base region disposed above the drift layer, a source region disposed above the base region, a gate trench formed deeper than the base region from a surface of the source region, a gate insulating film covering an inner wall surface of the gate trench, a gate electrode disposed on the gate insulating film, an interlayer insulating film covering the gate electrode and the gate insulating film and having a contact hole, a source electrode brought in ohmic contact with the source region through the contact hole, and a drain electrode disposed to a rear surface of the substrate. The source region has a lower impurity concentration on a side close to the base region than on a surface side brought in ohmic contact with the source region.

Abstract: A silicon carbide semiconductor device includes: a substrate; a first impurity region on the substrate; a base region on the first impurity region; a second impurity region in the base region; a trench gate structure including a gate insulation film and a gate electrode in a trench; a first electrode connected to the second impurity region and the base region; a second electrode on a rear surface of the substrate; a first current dispersion layer between the first impurity region and the base region; a plurality of first deep layers in the second current dispersion layer; a second current dispersion layer between the first current dispersion layer and the base region; and a second deep layer between the first current dispersion layer and the base region apart from the trench.

Abstract: A method for manufacturing a semiconductor device includes: forming an insulating film on a surface of a semiconductor layer of a semiconductor substrate; forming a contact hole in the insulating film; forming a conductor material on the insulating film to be in contact with the semiconductor layer through the contact hole; and patterning the conductor material using an alignment key included in the conductor material.

Abstract: A manufacturing method of a semiconductor device includes: forming a second conductive type layer over a first conductive type layer; and forming a trench by etching the second conductivity type layer by a plasma etching process to expose the first conductivity type layer. The etching of the second conductivity type layer includes: performing a spectroscopic analysis of light emission of plasma; detecting an interface between the first conductivity type layer and the second conductivity type layer based on a change in emission intensity; and stopping the etching of the second conductivity type layer when an end point is determined based on a detection result of the interface.

Abstract: A manufacturing method of a semiconductor device includes: forming a second conductive type layer over a first conductive type layer; and forming a trench by etching the second conductivity type layer by a plasma etching process to expose the first conductivity type layer. The etching of the second conductivity type layer includes: performing a spectroscopic analysis of light emission of plasma; detecting an interface between the first conductivity type layer and the second conductivity type layer based on a change in emission intensity; and stopping the etching of the second conductivity type layer when an end point is determined based on a detection result of the interface.

Abstract: A silicon carbide semiconductor device includes a substrate, a drift layer disposed above the substrate, a base region disposed above the drift layer, a source region disposed above the base region, a gate trench formed deeper than the base region from a surface of the source region, a gate insulating film covering an inner wall surface of the gate trench, a gate electrode disposed on the gate insulating film, an interlayer insulating film covering the gate electrode and the gate insulating film and having a contact hole, a source electrode brought in ohmic contact with the source region through the contact hole, and a drain electrode disposed to a rear surface of the substrate. The source region has a lower impurity concentration on a side close to the base region than on a surface side brought in ohmic contact with the source region.

Abstract: A silicon carbide semiconductor device includes: a substrate; a first impurity region on the substrate; a base region on the first impurity region; a second impurity region in the base region; a trench gate structure including a gate insulation film and a gate electrode in a trench; a first electrode connected to the second impurity region and the base region; a second electrode on a rear surface of the substrate; a first current dispersion layer between the first impurity region and the base region; a plurality of first deep layers in the second current dispersion layer; a second current dispersion layer between the first current dispersion layer and the base region; and a second deep layer between the first current dispersion layer and the base region apart from the trench.