Abstract: The present disclosure provides a Schottky barrier diode. The Schottky barrier diode includes: a semiconductor substrate of a first conductivity type; a semiconductor layer of the first conductivity type and having a region of the first conductivity type and an impurity region of the first conductivity type; a first electrode layer; a second electrode layer; a first external terminal electrically connected to the first electrode layer; and a second external terminal electrically connected to the second electrode layer. The first electrode layer includes a first base portion, a first extending portion and a second extending portion. The second electrode layer includes a second base portion and a third extending portion located between the first extending portion and the second extending portion in a second direction.