Patents by Inventor Aiko Shiga
Aiko Shiga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10910219Abstract: The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.Type: GrantFiled: July 26, 2019Date of Patent: February 2, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Koichiro Tanaka, Hidekazu Miyairi, Aiko Shiga, Akihisa Shimomura, Atsuo Isobe
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Publication number: 20190348286Abstract: The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.Type: ApplicationFiled: July 26, 2019Publication date: November 14, 2019Inventors: Koichiro TANAKA, Hidekazu MIYAIRI, Aiko SHIGA, Akihisa SHIMOMURA, Atsuo ISOBE
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Patent number: 10366885Abstract: The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.Type: GrantFiled: November 14, 2016Date of Patent: July 30, 2019Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Koichiro Tanaka, Hidekazu Miyairi, Aiko Shiga, Akihisa Shimomura, Atsuo Isobe
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Patent number: 9748099Abstract: A method of manufacturing a semiconductor device includes modifying a first laser beam from a first laser to form a first linear-shaped laser beam and modifying a second laser beam from a second laser to form a second linear-shaped laser beam. The method further includes overlaying the first linear-shaped laser beam and the second linear-shaped laser beam to form an overlayed linear-shaped laser beam, wherein the overlayed linear-shaped laser beam has a width and a length where the length is ten times or more as large as the width. The method also includes scanning a semiconductor film formed over a substrate with the overlayed linear-shaped laser beam to increase crystallinity of the semiconductor film, and patterning the semiconductor film to form a semiconductor layer which includes a channel formation region of a transistor.Type: GrantFiled: December 31, 2013Date of Patent: August 29, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Koichiro Tanaka, Hidekazu Miyairi, Aiko Shiga, Akihisa Shimomura, Atsuo Isobe
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Publication number: 20170062214Abstract: The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.Type: ApplicationFiled: November 14, 2016Publication date: March 2, 2017Inventors: Koichiro TANAKA, Hidekazu MIYAIRI, Aiko SHIGA, Akihisa SHIMOMURA, Atsuo ISOBE
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Publication number: 20170025546Abstract: A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above region so as to crystallize the first shape of semiconductor region. A continuous wave laser beam condensed in one or plural lines is used for the laser beam. The first shape of semiconductor region is etched to form a second shape of semiconductor region in which a channel forming region and a source and drain region are formed. The second shape of semiconductor region is disposed so that a channel forming range would be formed on respective crystal regions extending from the plurality of convex end portions. A semiconductor region adjacent to the channel forming region is eliminated.Type: ApplicationFiled: October 5, 2016Publication date: January 26, 2017Inventors: Chiho KOKUBO, Aiko SHIGA, Shunpei YAMAZAKI, Hidekazu MIYAIRI, Koji DAIRIKI, Koichiro TANAKA
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Publication number: 20140113440Abstract: The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.Type: ApplicationFiled: December 31, 2013Publication date: April 24, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Koichiro TANAKA, Hidekazu MIYAIRI, Aiko SHIGA, Akihisa SHIMOMURA, Atsuo ISOBE
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Patent number: 8696808Abstract: Each region, which should be left on a substrate after patterning, of a semiconductor film is grasped in accordance with a mask. Then, each region to be scanned with laser light is determined so that at least the region to be obtained through the patterning is crystallized, and a beam spot is made to hit the region to be scanned, thereby partially crystallizing the semiconductor film. Each portion with low output energy of the beam spot is shielded by a slit. In the present invention, the laser light is not scanned and irradiated onto the entire surface of the semiconductor film but is scanned such that at least each indispensable portion is crystallized to a minimum. With the construction described above, it becomes possible to save time taken to irradiate the laser light onto each portion to be removed through the patterning after the crystallization of the semiconductor film.Type: GrantFiled: September 5, 2006Date of Patent: April 15, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Hisashi Ohtani, Masaaki Hiroki, Koichiro Tanaka, Aiko Shiga, Satoshi Murakami, Mai Akiba
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Patent number: 8686315Abstract: The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.Type: GrantFiled: May 15, 2006Date of Patent: April 1, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Koichiro Tanaka, Hidekazu Miyairi, Aiko Shiga, Akihisa Shimomura, Atsuo Isobe
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Patent number: 8198173Abstract: To improve bonding strength and improve reliability of an SOI substrate in bonding a semiconductor substrate and a base substrate to each other even when an insulating film containing nitrogen is used as a bonding layer, an oxide film is provided on the semiconductor substrate side, a nitrogen-containing layer is provided on the base substrate side, and the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate are bonded to each other. Further, plasma treatment is performed on at least one of the oxide film and the nitrogen-containing layer before bonding the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate to each other. Plasma treatment can be performed in a state in which a bias voltage is applied.Type: GrantFiled: October 22, 2010Date of Patent: June 12, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hideto Ohnuma, Kenichiro Makino, Yoichi Iikubo, Masaharu Nagai, Aiko Shiga
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Publication number: 20120097963Abstract: A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above region so as to crystallize the first shape of semiconductor region. A continuous wave laser beam condensed in one or plural lines is used for the laser beam. The first shape of semiconductor region is etched to form a second shape of semiconductor region in which a channel forming region and a source and drain region are formed. The second shape of semiconductor region is disposed so that a channel foaming range would be formed on respective crystal regions extending from the plurality of convex end portions. A semiconductor region adjacent to the channel forming region is eliminated.Type: ApplicationFiled: December 30, 2011Publication date: April 26, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Chiho KOKUBO, Aiko Shiga, Shunpei Yamazaki, Hidekazu Miyairi, Koji Dairiki, Koichiro Tanaka
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Patent number: 8093593Abstract: A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above region so as to crystallize the first shape of semiconductor region. A continuous wave laser beam condensed in one or plural lines is used for the laser beam. The first shape of semiconductor region is etched to form a second shape of semiconductor region in which a channel forming region and a source and drain region are formed. The second shape of semiconductor region is disposed so that a channel forming range would be formed on respective crystal regions extending from the plurality of convex end portions. A semiconductor region adjacent to the channel forming region is eliminated.Type: GrantFiled: September 7, 2006Date of Patent: January 10, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Chiho Kokubo, Aiko Shiga, Shunpei Yamazaki, Hidekazu Miyairi, Koji Dairiki, Koichiro Tanaka
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Patent number: 8044372Abstract: Continuous wave laser apparatus with enhanced processing efficiency is provided as well as a method of manufacturing a semiconductor device using the laser apparatus. The laser apparatus has: a laser oscillator; a unit for rotating a process object; a unit for moving the center of the rotation along a straight line; and an optical system for processing laser light that is outputted from the laser oscillator to irradiate with the laser light a certain region within the moving range of the process object. The laser apparatus is characterized in that the certain region is on a line extended from the straight line and that the position at which the certain region overlaps the process object is moved by rotating the process object while moving the center of the rotation along the straight line.Type: GrantFiled: June 20, 2007Date of Patent: October 25, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Koichiro Tanaka, Hidekazu Miyairi, Aiko Shiga, Akihisa Shimomura, Mai Akiba
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Patent number: 7943885Abstract: By laser beam being slantly incident to the diffractive optics, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the device has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.Type: GrantFiled: May 15, 2006Date of Patent: May 17, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Koichiro Tanaka, Hidekazu Miyairi, Aiko Shiga, Akihisa Shimomura, Atsuo Isobe
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Patent number: 7892952Abstract: Provided are a laser apparatus of continuous oscillation that is capable of enhancing the efficiency of substrate processing, a laser irradiation method, and a manufacturing method for a semiconductor device using the laser apparatus. A portion of a semiconductor film that should be left on a substrate after patterning is grasped in accordance with a mask. Then, a portion to be scanned with a laser light is determined so that it is possible to crystallize at least the portion to be obtained through the patterning. Also, a beam spot is made to strike the portion to be scanned. As a result, the semiconductor film is partially crystallized. That is, with the present invention, the laser light is not scanned and irradiated onto the entire surface of a semiconductor film but is scanned so that at least an indispensable portion is crystallized.Type: GrantFiled: July 21, 2005Date of Patent: February 22, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Hisashi Ohtani, Masaaki Hiroki, Koichiro Tanaka, Aiko Shiga, Mai Akiba
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Publication number: 20110039395Abstract: To improve bonding strength and improve reliability of an SOI substrate in bonding a semiconductor substrate and a base substrate to each other even when an insulating film containing nitrogen is used as a bonding layer, an oxide film is provided on the semiconductor substrate side, a nitrogen-containing layer is provided on the base substrate side, and the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate are bonded to each other. Further, plasma treatment is performed on at least one of the oxide film and the nitrogen-containing layer before bonding the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate to each other. Plasma treatment can be performed in a state in which a bias voltage is applied.Type: ApplicationFiled: October 22, 2010Publication date: February 17, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Hideto OHNUMA, Kenichiro MAKINO, Yoichi IIKUBO, Masaharu NAGAI, Aiko SHIGA
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Patent number: 7829432Abstract: To improve bonding strength and improve reliability of an SOI substrate in bonding a semiconductor substrate and a base substrate to each other even when an insulating film containing nitrogen is used as a bonding layer, an oxide film is provided on the semiconductor substrate side, a nitrogen-containing layer is provided on the base substrate side, and the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate are bonded to each other. Further, plasma treatment is performed on at least one of the oxide film and the nitrogen-containing layer before bonding the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate to each other. Plasma treatment can be performed in a state in which a bias voltage is applied.Type: GrantFiled: June 23, 2009Date of Patent: November 9, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hideto Ohnuma, Kenichiro Makino, Yoichi Iikubo, Masaharu Nagai, Aiko Shiga
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Patent number: 7736917Abstract: A laser beam irradiation method that achieves uniform crystallization, even if a film thickness of an a-Si film or the like fluctuates, is provided. The present invention provides a laser beam irradiation method in which a non-single crystal semiconductor film is formed on a substrate having an insulating surface and a laser beam having a wavelength longer than 350 nm is irradiated to the non-single crystal semiconductor film, thus crystallizing the non-single crystal silicon film. The non-single crystal semiconductor film has a film thickness distribution within the surface of the substrate, and a differential coefficient of a laser beam absorptivity with respect to the film thickness of the non-single crystal semiconductor film is positive.Type: GrantFiled: February 9, 2007Date of Patent: June 15, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Akihisa Shimomura, Kenji Kasahara, Aiko Shiga, Hidekazu Miyairi, Koichiro Tanaka, Koji Dairiki
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Patent number: 7670935Abstract: Island-like semiconductor films and markers are formed prior to laser irradiation. Markers are used as positional references so as not to perform laser irradiation all over the semiconductor within a substrate surface, but to perform a minimum crystallization on at least indispensable portion. Since the time required for laser crystallization can be reduced, it is possible to increase the substrate processing speed. By applying the above-described constitution to a conventional SLS method, a means for solving such problem in the conventional SLS method that the substrate processing efficiency is insufficient, is provided.Type: GrantFiled: February 16, 2006Date of Patent: March 2, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Akihisa Shimomura, Hisashi Ohtani, Masaaki Hiroki, Koichiro Tanaka, Aiko Shiga, Mai Akiba, Kenji Kasahara
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Publication number: 20090325363Abstract: To improve bonding strength and improve reliability of an SOI substrate in bonding a semiconductor substrate and a base substrate to each other even when an insulating film containing nitrogen is used as a bonding layer, an oxide film is provided on the semiconductor substrate side, a nitrogen-containing layer is provided on the base substrate side, and the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate are bonded to each other. Further, plasma treatment is performed on at least one of the oxide film and the nitrogen-containing layer before bonding the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate to each other. Plasma treatment can be performed in a state in which a bias voltage is applied.Type: ApplicationFiled: June 23, 2009Publication date: December 31, 2009Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Hideto OHNUMA, Kenichiro MAKINO, Yoichi IIKUBO, Masaharu NAGAI, Aiko SHIGA