Patents by Inventor Aiko TAKASAKI

Aiko TAKASAKI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10672762
    Abstract: A semiconductor device is provided to reduce thermal fatigue in a junction portion of an external wiring to enhance long-term reliability, where the semiconductor device includes a semiconductor substrate, a transistor portion and a diode portion that are alternately arranged along a first direction parallel to a front surface of the semiconductor substrate inside the semiconductor substrate, a surface electrode that is provided above the transistor portion and the diode portion and that is electrically connected to the transistor portion and the diode portion, an external wiring that is joined to the surface electrode and that has a contact width with the surface electrode in the first direction, the contact width being larger than at least one of a width of the transistor portion in the first direction and a width of the diode portion in the first direction.
    Type: Grant
    Filed: June 3, 2019
    Date of Patent: June 2, 2020
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Akio Yamano, Aiko Takasaki, Hiroaki Ichikawa
  • Publication number: 20190287964
    Abstract: A semiconductor device is provided to reduce thermal fatigue in a junction portion of an external wiring to enhance long-term reliability, where the semiconductor device includes a semiconductor substrate, a transistor portion and a diode portion that are alternately arranged along a first direction parallel to a front surface of the semiconductor substrate inside the semiconductor substrate, a surface electrode that is provided above the transistor portion and the diode portion and that is electrically connected to the transistor portion and the diode portion, an external wiring that is joined to the surface electrode and that has a contact width with the surface electrode in the first direction, the contact width being larger than at least one of a width of the transistor portion in the first direction and a width of the diode portion in the first direction.
    Type: Application
    Filed: June 3, 2019
    Publication date: September 19, 2019
    Inventors: Akio YAMANO, Aiko TAKASAKI, Hiroaki ICHIKAWA