Patents by Inventor AILEEN LI

AILEEN LI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240104603
    Abstract: Methods and systems for matching user information between data sets, while preserving data privacy are provided. Some examples relate to matching subsets of users from a first device to subsets of users from a second device, based on a first set of indications and a second set of indications, respectively, to calculate how long it takes for a user to travel to a location of interest, after the user is provided with directed content. A conversion rate may be determined based on how many instances at which a user travels to the location of interest, within a conversion window, after the user is provided with the directed content. The conversion rate may be compared to a baseline conversion rate to determine a change in conversion rate. The change in conversion rate may correspond to an impact of the directed content in causing the user to travel to the location of interest. User data is not shared from the first device to the second device, and vice-versa.
    Type: Application
    Filed: September 27, 2022
    Publication date: March 28, 2024
    Inventors: Daniel Hebert, Aileen Li, James Kung
  • Publication number: 20230000961
    Abstract: A composition comprising mesoporous silica rods comprising an immune cell recruitment compound and an immune cell activation compound, and optionally comprising an antigen such as a tumor lysate. The composition is used to elicit an immune response to a vaccine antigen.
    Type: Application
    Filed: March 11, 2022
    Publication date: January 5, 2023
    Applicant: President and Fellows of Harvard College
    Inventors: Jaeyun Kim, Weiwei Aileen Li, David J. Mooney
  • Patent number: 11278604
    Abstract: A composition comprising mesoporous silica rods comprising an immune cell recruitment compound and an immune cell activation compound, and optionally comprising an antigen such as a tumor lysate. The composition is used to elicit an immune response to a vaccine antigen.
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: March 22, 2022
    Assignee: President and Fellows of Harvard College
    Inventors: Jaeyun Kim, Weiwei Aileen Li, David J. Mooney
  • Patent number: 10647959
    Abstract: The invention provides polymer scaffolds for cell-based tissue engineering.
    Type: Grant
    Filed: April 12, 2012
    Date of Patent: May 12, 2020
    Assignee: President and Fellows of Harvard College
    Inventors: David J. Mooney, Jaeyun Kim, Sidi A. Bencherif, Weiwei Aileen Li
  • Patent number: 10406216
    Abstract: The invention provides compositions and methods for utilizing scaffolds in cancer vaccines.
    Type: Grant
    Filed: November 7, 2016
    Date of Patent: September 10, 2019
    Assignee: President and Fellows of Harvard College
    Inventors: Jaeyun Kim, David J. Mooney, Weiwei Aileen Li, Praveen Arany, Or Gadish
  • Publication number: 20190216910
    Abstract: The provided herein are methods and compositions for eliciting an immune response to an antigen, such as cancer and microbial antigens.
    Type: Application
    Filed: January 31, 2019
    Publication date: July 18, 2019
    Inventors: David J. Mooney, W. Aileen Li, Omar Abdel-Rahman Ali, Ting-Yu Shih
  • Publication number: 20180344821
    Abstract: A composition comprising mesoporous silica rods comprising an immune cell recruitment compound and an immune cell activation compound, and optionally comprising an antigen such as a tumor lysate. The composition is used to elicit an immune response to a vaccine antigen.
    Type: Application
    Filed: March 26, 2018
    Publication date: December 6, 2018
    Inventors: Jaeyun Kim, Weiwei Aileen Li, David J. Mooney
  • Patent number: 9937249
    Abstract: A composition comprising mesoporous silica rods comprising an immune cell recruitment compound and an immune cell activation compound, and optionally comprising an antigen such as a tumor lysate. The composition is used to elicit an immune response to a vaccine antigen.
    Type: Grant
    Filed: April 16, 2013
    Date of Patent: April 10, 2018
    Assignee: President and Fellows of Harvard College
    Inventors: Jaeyun Kim, Weiwei Aileen Li, David J. Mooney
  • Publication number: 20170182138
    Abstract: The invention provides compositions and methods for utilizing scaffolds in cancer vaccines.
    Type: Application
    Filed: November 7, 2016
    Publication date: June 29, 2017
    Inventors: Jaeyun Kim, David J. Mooney, Weiwei Aileen Li, Praveen Arany, Or Gadish
  • Patent number: 9486512
    Abstract: The invention provides compositions and methods for utilizing scaffolds in cancer vaccines.
    Type: Grant
    Filed: June 4, 2012
    Date of Patent: November 8, 2016
    Assignee: President and Fellows of Harvard College
    Inventors: Jaeyun Kim, David J. Mooney, Weiwei Aileen Li, Praveen Arany, Or Gadish
  • Patent number: 9190282
    Abstract: A method is disclosed for fabricating a semiconductor structure. The method includes providing a semiconductor substrate, forming a first dielectric layer on a surface of the semiconductor substrate based on a first-type oxidation, and forming a high-K dielectric layer on a surface of the first dielectric layer. The method also includes performing a first thermal annealing process to remove the first dielectric layer between the semiconductor substrate and the high-K dielectric layer such that the high-K dielectric layer is on the surface of the semiconductor substrate. Further, the method includes performing a second thermal annealing process to form a second dielectric layer on the surface of the semiconductor substrate between the semiconductor substrate and the high-K dielectric layer, based on a second-type oxidation different from the first-type oxidation, such that high-K dielectric layer is on the second dielectric layer instead of the first dielectric layer.
    Type: Grant
    Filed: October 28, 2012
    Date of Patent: November 17, 2015
    Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP.
    Inventors: Aileen Li, Jinghua Ni
  • Patent number: 9147614
    Abstract: Various embodiments provide transistors and their fabrication methods. An exemplary method for forming a transistor includes removing a dummy gate to form a trench over a semiconductor substrate. A high-k dielectric layer can be conformally formed on surface of the trench and then be fluorinated to form a fluorinated high-k dielectric layer. A functional layer can be formed on the fluorinated high-k dielectric layer and a metal layer can be formed on the functional layer to fill the trench with the metal layer. Due to fluorination of the high-k dielectric layer, negative bias temperature instability of the formed transistor can be reduced and oxygen vacancies can be passivated to reduce positive bias temperature instability of the transistor.
    Type: Grant
    Filed: May 29, 2013
    Date of Patent: September 29, 2015
    Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP.
    Inventors: Aileen Li, Jinghua Ni
  • Patent number: 9035397
    Abstract: A method for manufacturing a gate structure may include the following steps: providing a stack on a substrate, the first stack including (from top to bottom) a dummy layer, a first TiN layer, a TaN layer, a second TiN layer, a high-k first dielectric layer, and an interfacial layer; etching the stack to result in a remaining stack that includes at least a remaining dummy layer, a first remaining TiN layer, and a remaining TaN layer; providing an etching stop layer on the substrate; providing a second dielectric layer on the etching stop layer; performing planarization according to the remaining dummy layer; removing the remaining dummy layer and a first portion of the first remaining TiN layer using a dry etching process; removing a second portion of the first remaining TiN layer using a wet etching process; and providing a metal gate layer on the remaining TaN layer.
    Type: Grant
    Filed: June 21, 2013
    Date of Patent: May 19, 2015
    Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
    Inventors: Aileen Li, Jinghua Ni, David Han
  • Publication number: 20150072009
    Abstract: A composition comprising mesoporous silica rods comprising an immune cell recruitment compound and an immune cell activation compound, and optionally comprising an antigen such as a tumor lysate. The composition is used to elicit an immune response to a vaccine antigen.
    Type: Application
    Filed: April 16, 2013
    Publication date: March 12, 2015
    Inventors: Jaeyun Kim, Weiwei Aileen Li, David J. Mooney
  • Patent number: 8853077
    Abstract: A method is provided for fabricating a through silicon via packaging structure. The method includes providing a first type substrate, and forming a second type substrate deferent from the first type substrate on the first type substrate. The method also includes forming a semiconductor device on a first surface of the second type substrate, and forming an interlayer dielectric layer on the first surface of the second type substrate. Further, the method includes forming a metal interconnection structure in the interlayer dielectric layer, and forming a through silicon via structure perforating the second type substrate and electrically connecting with the metal interconnection structure. Further, the method also includes removing the first type substrate using a gas etching process or a wet etching process to expose a second surface of the second type substrate and a bottom surface of the through silicon via structure.
    Type: Grant
    Filed: December 29, 2012
    Date of Patent: October 7, 2014
    Assignee: Semiconductor Manufacturing International Corp
    Inventors: Aileen Li, Jinghua Ni
  • Publication number: 20140193488
    Abstract: The invention provides compositions and methods for utilizing scaffolds in cancer vaccines.
    Type: Application
    Filed: June 4, 2012
    Publication date: July 10, 2014
    Applicant: PRESIDENT AND FELLOWS OF HARVARD COLLEGE
    Inventors: Jaeyun Kim, David J. Mooney, Weiwei Aileen Li, Praveen Arany, Or Gadish
  • Publication number: 20140117463
    Abstract: A method for manufacturing a gate structure may include the following steps: providing a stack on a substrate, the first stack including (from top to bottom) a dummy layer, a first TiN layer, a TaN layer, a second TiN layer, a high-k first dielectric layer, and an interfacial layer; etching the stack to result in a remaining stack that includes at least a remaining dummy layer, a first remaining TiN layer, and a remaining TaN layer; providing an etching stop layer on the substrate; providing a second dielectric layer on the etching stop layer; performing planarization according to the remaining dummy layer; removing the remaining dummy layer and a first portion of the first remaining TiN layer using a dry etching process; removing a second portion of the first remaining TiN layer using a wet etching process; and providing a metal gate layer on the remaining TaN layer.
    Type: Application
    Filed: June 21, 2013
    Publication date: May 1, 2014
    Inventors: Aileen LI, Jinghua NI, David HAN
  • Publication number: 20140077313
    Abstract: Various embodiments provide transistors and their fabrication methods. An exemplary method for forming a transistor includes removing a dummy gate to form a trench over a semiconductor substrate. A high-k dielectric layer can be conformally formed on surface of the trench and then be fluorinated to form a fluorinated high-k dielectric layer. A functional layer can be formed on the fluorinated high-k dielectric layer and a metal layer can be formed on the functional layer to fill the trench with the metal layer. Due to fluorination of the high-k dielectric layer, negative bias temperature instability of the formed transistor can be reduced and oxygen vacancies can be passivated to reduce positive bias temperature instability of the transistor.
    Type: Application
    Filed: May 29, 2013
    Publication date: March 20, 2014
    Applicant: Semiconductor Manufacturing International Corp.
    Inventors: AILEEN LI, JINGHUA NI
  • Publication number: 20140054791
    Abstract: A method is provided for fabricating a through silicon via packaging structure. The method includes providing a first type substrate, and forming a second type substrate deferent from the first type substrate on the first type substrate. The method also includes forming a semiconductor device on a first surface of the second type substrate, and forming an interlayer dielectric layer on the first surface of the second type substrate. Further, the method includes forming a metal interconnection structure in the interlayer dielectric layer, and forming a through silicon via structure perforating the second type substrate and electrically connecting with the metal interconnection structure. Further, the method also includes removing the first type substrate using a gas etching process or a wet etching process to expose a second surface of the second type substrate and a bottom surface of the through silicon via structure.
    Type: Application
    Filed: December 29, 2012
    Publication date: February 27, 2014
    Applicant: SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP.
    Inventors: AILEEN LI, JINGHUA NI
  • Publication number: 20130313658
    Abstract: A method is disclosed for fabricating a semiconductor structure. The method includes providing a semiconductor substrate, forming a first dielectric layer on a surface of the semiconductor substrate based on a first-type oxidation, and forming a high-K dielectric layer on a surface of the first dielectric layer. The method also includes performing a first thermal annealing process to remove the first dielectric layer between the semiconductor substrate and the high-K dielectric layer such that the high-K dielectric layer is on the surface of the semiconductor substrate. Further, the method includes performing a second thermal annealing process to form a second dielectric layer on the surface of the semiconductor substrate between the semiconductor substrate and the high-K dielectric layer, based on a second-type oxidation different from the first-type oxidation, such that high-K dielectric layer is on the second dielectric layer instead of the first dielectric layer.
    Type: Application
    Filed: October 28, 2012
    Publication date: November 28, 2013
    Inventors: AILEEN LI, JINGHUA NI