Patents by Inventor AILEEN LI
AILEEN LI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240104603Abstract: Methods and systems for matching user information between data sets, while preserving data privacy are provided. Some examples relate to matching subsets of users from a first device to subsets of users from a second device, based on a first set of indications and a second set of indications, respectively, to calculate how long it takes for a user to travel to a location of interest, after the user is provided with directed content. A conversion rate may be determined based on how many instances at which a user travels to the location of interest, within a conversion window, after the user is provided with the directed content. The conversion rate may be compared to a baseline conversion rate to determine a change in conversion rate. The change in conversion rate may correspond to an impact of the directed content in causing the user to travel to the location of interest. User data is not shared from the first device to the second device, and vice-versa.Type: ApplicationFiled: September 27, 2022Publication date: March 28, 2024Inventors: Daniel Hebert, Aileen Li, James Kung
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Publication number: 20230000961Abstract: A composition comprising mesoporous silica rods comprising an immune cell recruitment compound and an immune cell activation compound, and optionally comprising an antigen such as a tumor lysate. The composition is used to elicit an immune response to a vaccine antigen.Type: ApplicationFiled: March 11, 2022Publication date: January 5, 2023Applicant: President and Fellows of Harvard CollegeInventors: Jaeyun Kim, Weiwei Aileen Li, David J. Mooney
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Patent number: 11278604Abstract: A composition comprising mesoporous silica rods comprising an immune cell recruitment compound and an immune cell activation compound, and optionally comprising an antigen such as a tumor lysate. The composition is used to elicit an immune response to a vaccine antigen.Type: GrantFiled: March 26, 2018Date of Patent: March 22, 2022Assignee: President and Fellows of Harvard CollegeInventors: Jaeyun Kim, Weiwei Aileen Li, David J. Mooney
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Patent number: 10647959Abstract: The invention provides polymer scaffolds for cell-based tissue engineering.Type: GrantFiled: April 12, 2012Date of Patent: May 12, 2020Assignee: President and Fellows of Harvard CollegeInventors: David J. Mooney, Jaeyun Kim, Sidi A. Bencherif, Weiwei Aileen Li
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Patent number: 10406216Abstract: The invention provides compositions and methods for utilizing scaffolds in cancer vaccines.Type: GrantFiled: November 7, 2016Date of Patent: September 10, 2019Assignee: President and Fellows of Harvard CollegeInventors: Jaeyun Kim, David J. Mooney, Weiwei Aileen Li, Praveen Arany, Or Gadish
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Publication number: 20190216910Abstract: The provided herein are methods and compositions for eliciting an immune response to an antigen, such as cancer and microbial antigens.Type: ApplicationFiled: January 31, 2019Publication date: July 18, 2019Inventors: David J. Mooney, W. Aileen Li, Omar Abdel-Rahman Ali, Ting-Yu Shih
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Publication number: 20180344821Abstract: A composition comprising mesoporous silica rods comprising an immune cell recruitment compound and an immune cell activation compound, and optionally comprising an antigen such as a tumor lysate. The composition is used to elicit an immune response to a vaccine antigen.Type: ApplicationFiled: March 26, 2018Publication date: December 6, 2018Inventors: Jaeyun Kim, Weiwei Aileen Li, David J. Mooney
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Patent number: 9937249Abstract: A composition comprising mesoporous silica rods comprising an immune cell recruitment compound and an immune cell activation compound, and optionally comprising an antigen such as a tumor lysate. The composition is used to elicit an immune response to a vaccine antigen.Type: GrantFiled: April 16, 2013Date of Patent: April 10, 2018Assignee: President and Fellows of Harvard CollegeInventors: Jaeyun Kim, Weiwei Aileen Li, David J. Mooney
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Publication number: 20170182138Abstract: The invention provides compositions and methods for utilizing scaffolds in cancer vaccines.Type: ApplicationFiled: November 7, 2016Publication date: June 29, 2017Inventors: Jaeyun Kim, David J. Mooney, Weiwei Aileen Li, Praveen Arany, Or Gadish
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Patent number: 9486512Abstract: The invention provides compositions and methods for utilizing scaffolds in cancer vaccines.Type: GrantFiled: June 4, 2012Date of Patent: November 8, 2016Assignee: President and Fellows of Harvard CollegeInventors: Jaeyun Kim, David J. Mooney, Weiwei Aileen Li, Praveen Arany, Or Gadish
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Patent number: 9190282Abstract: A method is disclosed for fabricating a semiconductor structure. The method includes providing a semiconductor substrate, forming a first dielectric layer on a surface of the semiconductor substrate based on a first-type oxidation, and forming a high-K dielectric layer on a surface of the first dielectric layer. The method also includes performing a first thermal annealing process to remove the first dielectric layer between the semiconductor substrate and the high-K dielectric layer such that the high-K dielectric layer is on the surface of the semiconductor substrate. Further, the method includes performing a second thermal annealing process to form a second dielectric layer on the surface of the semiconductor substrate between the semiconductor substrate and the high-K dielectric layer, based on a second-type oxidation different from the first-type oxidation, such that high-K dielectric layer is on the second dielectric layer instead of the first dielectric layer.Type: GrantFiled: October 28, 2012Date of Patent: November 17, 2015Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP.Inventors: Aileen Li, Jinghua Ni
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Patent number: 9147614Abstract: Various embodiments provide transistors and their fabrication methods. An exemplary method for forming a transistor includes removing a dummy gate to form a trench over a semiconductor substrate. A high-k dielectric layer can be conformally formed on surface of the trench and then be fluorinated to form a fluorinated high-k dielectric layer. A functional layer can be formed on the fluorinated high-k dielectric layer and a metal layer can be formed on the functional layer to fill the trench with the metal layer. Due to fluorination of the high-k dielectric layer, negative bias temperature instability of the formed transistor can be reduced and oxygen vacancies can be passivated to reduce positive bias temperature instability of the transistor.Type: GrantFiled: May 29, 2013Date of Patent: September 29, 2015Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP.Inventors: Aileen Li, Jinghua Ni
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Patent number: 9035397Abstract: A method for manufacturing a gate structure may include the following steps: providing a stack on a substrate, the first stack including (from top to bottom) a dummy layer, a first TiN layer, a TaN layer, a second TiN layer, a high-k first dielectric layer, and an interfacial layer; etching the stack to result in a remaining stack that includes at least a remaining dummy layer, a first remaining TiN layer, and a remaining TaN layer; providing an etching stop layer on the substrate; providing a second dielectric layer on the etching stop layer; performing planarization according to the remaining dummy layer; removing the remaining dummy layer and a first portion of the first remaining TiN layer using a dry etching process; removing a second portion of the first remaining TiN layer using a wet etching process; and providing a metal gate layer on the remaining TaN layer.Type: GrantFiled: June 21, 2013Date of Patent: May 19, 2015Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATIONInventors: Aileen Li, Jinghua Ni, David Han
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Publication number: 20150072009Abstract: A composition comprising mesoporous silica rods comprising an immune cell recruitment compound and an immune cell activation compound, and optionally comprising an antigen such as a tumor lysate. The composition is used to elicit an immune response to a vaccine antigen.Type: ApplicationFiled: April 16, 2013Publication date: March 12, 2015Inventors: Jaeyun Kim, Weiwei Aileen Li, David J. Mooney
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Patent number: 8853077Abstract: A method is provided for fabricating a through silicon via packaging structure. The method includes providing a first type substrate, and forming a second type substrate deferent from the first type substrate on the first type substrate. The method also includes forming a semiconductor device on a first surface of the second type substrate, and forming an interlayer dielectric layer on the first surface of the second type substrate. Further, the method includes forming a metal interconnection structure in the interlayer dielectric layer, and forming a through silicon via structure perforating the second type substrate and electrically connecting with the metal interconnection structure. Further, the method also includes removing the first type substrate using a gas etching process or a wet etching process to expose a second surface of the second type substrate and a bottom surface of the through silicon via structure.Type: GrantFiled: December 29, 2012Date of Patent: October 7, 2014Assignee: Semiconductor Manufacturing International CorpInventors: Aileen Li, Jinghua Ni
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Publication number: 20140193488Abstract: The invention provides compositions and methods for utilizing scaffolds in cancer vaccines.Type: ApplicationFiled: June 4, 2012Publication date: July 10, 2014Applicant: PRESIDENT AND FELLOWS OF HARVARD COLLEGEInventors: Jaeyun Kim, David J. Mooney, Weiwei Aileen Li, Praveen Arany, Or Gadish
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Publication number: 20140117463Abstract: A method for manufacturing a gate structure may include the following steps: providing a stack on a substrate, the first stack including (from top to bottom) a dummy layer, a first TiN layer, a TaN layer, a second TiN layer, a high-k first dielectric layer, and an interfacial layer; etching the stack to result in a remaining stack that includes at least a remaining dummy layer, a first remaining TiN layer, and a remaining TaN layer; providing an etching stop layer on the substrate; providing a second dielectric layer on the etching stop layer; performing planarization according to the remaining dummy layer; removing the remaining dummy layer and a first portion of the first remaining TiN layer using a dry etching process; removing a second portion of the first remaining TiN layer using a wet etching process; and providing a metal gate layer on the remaining TaN layer.Type: ApplicationFiled: June 21, 2013Publication date: May 1, 2014Inventors: Aileen LI, Jinghua NI, David HAN
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Publication number: 20140077313Abstract: Various embodiments provide transistors and their fabrication methods. An exemplary method for forming a transistor includes removing a dummy gate to form a trench over a semiconductor substrate. A high-k dielectric layer can be conformally formed on surface of the trench and then be fluorinated to form a fluorinated high-k dielectric layer. A functional layer can be formed on the fluorinated high-k dielectric layer and a metal layer can be formed on the functional layer to fill the trench with the metal layer. Due to fluorination of the high-k dielectric layer, negative bias temperature instability of the formed transistor can be reduced and oxygen vacancies can be passivated to reduce positive bias temperature instability of the transistor.Type: ApplicationFiled: May 29, 2013Publication date: March 20, 2014Applicant: Semiconductor Manufacturing International Corp.Inventors: AILEEN LI, JINGHUA NI
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Publication number: 20140054791Abstract: A method is provided for fabricating a through silicon via packaging structure. The method includes providing a first type substrate, and forming a second type substrate deferent from the first type substrate on the first type substrate. The method also includes forming a semiconductor device on a first surface of the second type substrate, and forming an interlayer dielectric layer on the first surface of the second type substrate. Further, the method includes forming a metal interconnection structure in the interlayer dielectric layer, and forming a through silicon via structure perforating the second type substrate and electrically connecting with the metal interconnection structure. Further, the method also includes removing the first type substrate using a gas etching process or a wet etching process to expose a second surface of the second type substrate and a bottom surface of the through silicon via structure.Type: ApplicationFiled: December 29, 2012Publication date: February 27, 2014Applicant: SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP.Inventors: AILEEN LI, JINGHUA NI
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Publication number: 20130313658Abstract: A method is disclosed for fabricating a semiconductor structure. The method includes providing a semiconductor substrate, forming a first dielectric layer on a surface of the semiconductor substrate based on a first-type oxidation, and forming a high-K dielectric layer on a surface of the first dielectric layer. The method also includes performing a first thermal annealing process to remove the first dielectric layer between the semiconductor substrate and the high-K dielectric layer such that the high-K dielectric layer is on the surface of the semiconductor substrate. Further, the method includes performing a second thermal annealing process to form a second dielectric layer on the surface of the semiconductor substrate between the semiconductor substrate and the high-K dielectric layer, based on a second-type oxidation different from the first-type oxidation, such that high-K dielectric layer is on the second dielectric layer instead of the first dielectric layer.Type: ApplicationFiled: October 28, 2012Publication date: November 28, 2013Inventors: AILEEN LI, JINGHUA NI