Patents by Inventor Aimée SAVOUREY

Aimée SAVOUREY has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing a substoichiometric layer of titanium, vanadium, tungsten or molybdenum oxide
    Patent number: 12473629
    Abstract: The present invention relates to a method for producing a substoichiometric oxygen layer from titanium, vanadium, tungsten or molybdenum oxide on a substrate by magnetron sputtering a target in a chamber, the method being characterised in that the target consists of titanium, vanadium, tungsten or molybdenum oxide and in that it comprises the steps of: a) creating a vacuum in the chamber and adding an inert gas to same; b) simultaneously applying a first radiofrequency potential to the target and a second radiofrequency potential to the substrate so as to generate, in the chamber, a plasma that is suitable for simultaneously i) sputtering the target to deposit a layer of the titanium, vanadium, tungsten or molybdenum oxide on the substrate; and ii) sputtering the layer of titanium, vanadium, tungsten or molybdenum oxide deposited on the substrate to remove oxygen atoms from the layer.
    Type: Grant
    Filed: December 20, 2022
    Date of Patent: November 18, 2025
    Assignees: SOCIETE DES CERAMIQUES TECHNIQUES, UNIVERSITE PAUL SABATIER TOULOUSE III, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS)
    Inventors: Aimée Savourey, Lionel Presmanes, Yohann Thimont, Antoine Barnabe
  • Method for Producing a Substoichiometric Layer of Titanium, Vanadium, Tungsten or Molybdenum Oxide
    Publication number: 20250051906
    Abstract: The present invention relates to a method for producing a substoichiometric oxygen layer from titanium, vanadium, tungsten or molybdenum oxide on a substrate by magnetron sputtering a target in a chamber, the method being characterised in that the target consists of titanium, vanadium, tungsten or molybdenum oxide and in that it comprises the steps of: a) creating a vacuum in the chamber and adding an inert gas to same; b) simultaneously applying a first radiofrequency potential to the target and a second radiofrequency potential to the substrate so as to generate, in the chamber, a plasma that is suitable for simultaneously i) sputtering the target to deposit a layer of the titanium, vanadium, tungsten or molybdenum oxide on the substrate; and ii) sputtering the layer of titanium, vanadium, tungsten or molybdenum oxide deposited on the substrate to remove oxygen atoms from the layer.
    Type: Application
    Filed: December 20, 2022
    Publication date: February 13, 2025
    Inventors: Aimée SAVOUREY, Lionel PRESMANES, Yohann THIMONT, Antoine BARNABE