Abstract: Optical filters are used to compensate for changes in LED and pcLED performance resulting from technological advances in device design or manufacturing, with for example the filtered optical output from later generation devices matching or substantially matching the optical performance of earlier generation legacy devices. This can allow the advanced generation devices to be substituted in applications previously supported by the legacy devices, even if the optical performance of the unfiltered advanced generation devices does not satisfy the optical performance specifications required by the application. Somewhat paradoxically, the advantages of using the filters in combination with the advanced generation devices may arise from the filters making the optical performance of the devices worse according to one or more figures of merit.

Abstract: An LED structure includes an epi layer grown on a substrate and a plurality of dielectric nanoantennas positioned within the epi layer. The dielectric antennas can be periodically arranged to reduce reabsorption of light and redirect oblique incident light to improve overall light coupling efficiency. Each of the dielectric nanoantennas can have a top, a bottom, a height less than 1000 nm and greater than 200 nm and a diameter less than 2000 nm and greater than 300 nm.

Abstract: Optical filters are used to compensate for changes in LED and pcLED performance resulting from technological advances in device design or manufacturing, with for example the filtered optical output from later generation devices matching or substantially matching the optical performance of earlier generation legacy devices. This can allow the advanced generation devices to be substituted in applications previously supported by the legacy devices, even if the optical performance of the unfiltered advanced generation devices does not satisfy the optical performance specifications required by the application. Somewhat paradoxically, the advantages of using the filters in combination with the advanced generation devices may arise from the filters making the optical performance of the devices worse according to one or more figures of merit.

Abstract: In an embodiment a light emitting device includes a semiconductor layer stack with a first layer of a first doping type, a second layer of a second doping type, and an active region arranged between the first and the second layer, a first electric contact connected to an electric contact via, the electric contact via extending electrically isolated through the second layer and the active region and contacting the first layer and a second electric contact contacting the second layer, wherein the first electric contact and the second electric contact are arranged on the second layer on a bottom surface of the semiconductor layer stack, and wherein an interface between a top surface of the semiconductor layer stack and a medium above the top surface is roughened in an area smaller than an area of the top surface.

Abstract: A semiconductor light-emitting device includes a junction or active layer between doped semiconductor layers coextensive over a contiguous device area, corresponding sets of electrical contacts connected to the semiconductor layers, and multiple nanostructured optical elements at a surface of one semiconductor layer opposite the other semiconductor layer. Composite electrical contacts of one set include a conductive layer, a transparent dielectric layer between the conductive and semiconductor layers, and vias through the dielectric layer connecting the conductive and semiconductor layers. The nanostructured elements redirect light, propagating laterally in optical modes supported by the semiconductor layers, to exit the device. The composite electrical contacts can be independent and define independently addressable pixel areas of the device. The nanostructured elements and thin semiconductor layers can yield high contrast between adjacent pixel areas without trenches between them.

Abstract: A light-emitting array includes a semiconductor LED structure, multiple transparent dielectric bodies, a set of multiple, independent first electrical contacts, and a set of second electrical contacts. The LED structure extends contiguously over the array. The second electrical contacts are in electrical contact with the second semiconductor layer. Each dielectric body protrudes away from the first semiconductor layer and has on its surface an electrically conductive layer in electrical contact with the first semiconductor layer, forming a portion of a corresponding one of the first electrical contacts. Each dielectric body and corresponding first electrical contact define a corresponding discrete, circumscribed pixel region within the contiguous area of the array, each pixel region separate from the others.

Abstract: A semiconductor light-emitting device includes a junction or active layer between doped semiconductor layers coextensive over a contiguous device area, corresponding sets of electrical contacts connected to the semiconductor layers, and multiple nanostructured optical elements at a surface of one semiconductor layer opposite the other semiconductor layer. Composite electrical contacts of one set include a conductive layer, a transparent dielectric layer between the conductive and semiconductor layers, and vias through the dielectric layer connecting the conductive and semiconductor layers. The nanostructured elements redirect light, propagating laterally in optical modes supported by the semiconductor layers, to exit the device. The composite electrical contacts can be independent and define independently addressable pixel areas of the device. The nanostructured elements and thin semiconductor layers can yield high contrast between adjacent pixel areas without trenches between them.

Abstract: A light-emitting device includes a semiconductor diode structure with one or more light-emitting active layers, an anti-reflection coating on its front surface, and a redirection layer on its back surface. Active-layer output light propagates within the diode structure. The anti-reflection coating on the front surface increases transmission of active-layer output light incident below the critical angle ?c. Active-layer output light incident on the redirection layer at an incidence angle greater than ?c is redirected to propagate toward the front surface at an incidence angle that is less than ?c. Device output light is transmitted by the front surface to propagate in an ambient medium, and includes first and second portions of the active-layer output light incident on the front surface at an incidence angle less than ?c, the first portion without redirection by the redirection layer and the second portion with redirection by the redirection layer.

Abstract: A semiconductor light-emitting device includes a junction or active layer between doped semiconductor layers coextensive over a contiguous device area, corresponding sets of electrical contacts connected to the semiconductor layers, and multiple nanostructured optical elements at a surface of one semiconductor layer opposite the other semiconductor layer. Composite electrical contacts of one set include a conductive layer, a transparent dielectric layer between the conductive and semiconductor layers, and vias through the dielectric layer connecting the conductive and semiconductor layers. The nanostructured elements redirect light, propagating laterally in optical modes supported by the semiconductor layers, to exit the device. The composite electrical contacts can be independent and define independently addressable pixel areas of the device. The nanostructured elements and thin semiconductor layers can yield high contrast between adjacent pixel areas without trenches between them.

Abstract: A light-emitting array includes a semiconductor LED structure, multiple transparent dielectric bodies, a set of multiple, independent first electrical contacts, and a set of second electrical contacts. The LED structure extends contiguously over the array. The second electrical contacts are in electrical contact with the second semiconductor layer. Each dielectric body protrudes away from the first semiconductor layer and has on its surface an electrically conductive layer in electrical contact with the first semiconductor layer, forming a portion of a corresponding one of the first electrical contacts. Each dielectric body and corresponding first electrical contact define a corresponding discrete, circumscribed pixel region within the contiguous area of the array, each pixel region separate from the others.

Abstract: A semiconductor LED includes p-doped, n-doped, and active layers, and has anode and cathode electrical contacts, a lateral dielectric layer on the side surfaces of the LED, and an electrically conductive bonding layer on the lateral dielectric layer. The bonding layer is electrically coupled to the anode electrical contact and electrically insulated from side surfaces of the active and n-doped layers by the lateral dielectric layer. The LED has a cross-sectional area that increases monotonically with increasing distance from its anode contact surface toward its light-exit surface. Side-surface shape is arranged so that internal reflection within the LED or lateral dielectric layer redirects a portion of light, emitted by the active layer and propagating within the LED outside an escape cone, to propagate toward the exit surface of the n-doped layer within the escape cone.

Abstract: A light-emitting device includes a semiconductor diode structure with one or more light-emitting active layers, an anti-reflection coating on its front surface, and a redirection layer on its back surface. Active-layer output light propagates within the diode structure. The anti-reflection coating on the front surface increases transmission of active-layer output light incident below the critical angle ?C. Active-layer output light incident on the redirection layer at an incidence angle greater than ?C is redirected to propagate toward the front surface at an incidence angle that is less than ?C. Device output light is transmitted by the front surface to propagate in an ambient medium, and includes first and second portions of the active-layer output light incident on the front surface at an incidence angle less than ?C, the first portion without redirection by the redirection layer and the second portion with redirection by the redirection layer.

Abstract: A light-emitting device includes a semiconductor diode structure and a multi-layer reflector (MLR) structure. The diode structure includes first and second doped semiconductor layers and an active layer between them; the active layer emits output light at a nominal emission vacuum wavelength ?0 to propagate within the diode structure. The MLR structure is positioned against a back surface of the second semiconductor layer, includes two or more layers of dielectric materials of two or more different refractive indices, reflects incident output light within the diode structure, and is in near-field proximity to the active layer relative to ?0. At least a portion of the output light, propagating perpendicularly within the diode structure relative to a device exit surface, exits the diode structure as device output light. The MLR structure can include scattering elements that scatter some laterally propagating output light to propagate perpendicularly.

Abstract: A light-emitting device includes a semiconductor diode structure, a surface-lattice-mode (SLR) structure against the back of the diode structure, and a reflector against the back of the SLR structure. The diode structure includes first and second doped semiconductor layers and an active layer between them; the active layer emits output light at a nominal emission vacuum wavelength ?0 to propagate within the diode structure. The SLR structure includes an index-matched layer, a lower-index layer, and scattering elements, and is in near-field proximity to the active layer relative to ?0. At least a portion of the output light, propagating perpendicularly within the diode structure relative to a device exit surface, exits the diode structure as device output light. The scattering elements redirect output light propagating within the device, including in laterally propagating surface-lattice-resonance modes supported by the SLR structure, to propagate perpendicularly toward the device exit surface.

Abstract: A light-emitting device includes a semiconductor diode structure, a quasi-guided-mode (QGM) structure against the back of the diode structure, and a reflector against the back of the QGM structure. The diode structure includes first and second doped semiconductor layers and an active layer between them; the active layer emits output light at a nominal emission vacuum wavelength ?0 to propagate within the diode structure. The QGM structure includes a waveguide layer, a cladding layer, and scattering elements, and is in near-field proximity to the active layer relative to ?0. At least a portion of the output light, propagating perpendicularly within the diode structure relative to a device exit surface, exits the diode structure as device output light. The scattering elements redirect output light propagating within the device, including in laterally propagating quasi-guided modes supported by the QGM structure, to propagate perpendicularly toward the device exit surface.

Abstract: A semiconductor diode structure has one or more light-emitting active layers and a redirection layer on the back surface that includes one or more of an array of nano-antennae, a partial photonic bandgap structure, a photonic crystal, or an array of meta-atoms or meta-molecules, and exhibits non-specular internal reflective redirection of output light incident thereon within the diode structure. One or both of the front or back surfaces exhibit position-dependent redirection, reflection, or transmission of the output light, including one or both of (i) position-dependent internal reflective redirection of output light incident on the back-surface or (ii) position-dependent internal reflective redirection, or position-dependent transmissive redirection, of output light incident on a front-surface layer or coating. Position dependence of luminance of output light exiting the diode structure can differ from position dependence of emission from the active layer.

Abstract: A semiconductor light-emitting device includes a junction or active layer between doped semiconductor layers coextensive over a contiguous device area, corresponding sets of electrical contacts connected to the semiconductor layers, and multiple nanostructured optical elements at a surface of one semiconductor layer opposite the other semiconductor layer. Composite electrical contacts of one set include a conductive layer, a transparent dielectric layer between the conductive and semiconductor layers, and vias through the dielectric layer connecting the conductive and semiconductor layers. The nanostructured elements redirect light, propagating laterally in optical modes supported by the semiconductor layers, to exit the device. The composite electrical contacts can be independent and define independently addressable pixel areas of the device. The nanostructured elements and thin semiconductor layers can yield high contrast between adjacent pixel areas without trenches between them.

Abstract: A light-emitting device includes a semiconductor diode structure with one or more light-emitting active layers, an anti-reflection coating on its front surface, and a redirection layer on its back surface. Active-layer output light propagates within the diode structure. The anti-reflection coating on the front surface increases transmission of active-layer output light incident below the critical angle ?C. Active-layer output light incident on the redirection layer at an incidence angle greater than ?C is redirected to propagate toward the front surface at an incidence angle that is less than ?C. Device output light is transmitted by the front surface to propagate in an ambient medium, and includes first and second portions of the active-layer output light incident on the front surface at an incidence angle less than ?C, the first portion without redirection by the redirection layer and the second portion with redirection by the redirection layer.

Abstract: An LED structure includes an epi layer grown on a substrate and a plurality of dielectric nanoantennas positioned within the epi layer. The dielectric antennas can be periodically arranged to reduce reabsorption of light and redirect oblique incident light to improve overall light coupling efficiency. Each of the dielectric nanoantennas can have a top, a bottom, a height less than 1000 nm and greater than 200 nm and a diameter less than 2000 nm and greater than 300 nm.