Abstract: Device and method for immersed synthesis and continuous growth of phosphides under a magnetic field are disclosed in the field of semiconductor material preparation. In particular, device and method for synthesizing and growing semiconductor phosphides by means of immersing phosphorus into a metal melt under the action of a static magnetic field are disclosed. The device includes a furnace body, an injection synthesis system and a static magnetic field generator. The method includes A, heating the crucible to melt the metal and a covering material boron oxide in the crucible; B, immersing red phosphorus into the crucible; C, applying a static magnetic field surrounding the crucible, and adjusting the temperature gradient to start the synthesis; and D, performing crystal growth after completion of the synthesis.

Abstract: A method includes: oxidizing a target N+-type gallium oxide substrate to obtain a first N?-type gallium oxide drift layer formed on an upper surface of the target N+-type gallium oxide substrate and a second N?-type gallium oxide drift layer formed on a lower surface of the target N+-type gallium oxide substrate; preparing a first anode electrode on an upper surface of the first N?-type gallium oxide drift layer and a second anode electrode on a lower surface of the second N?-type gallium oxide drift layer; cutting the target N+-type gallium oxide substrate, to obtain a first N+-type gallium oxide substrate and a second N+-type gallium oxide substrate; and preparing a first cathode electrode on a lower surface of the first N+-type gallium oxide substrate and a second cathode electrode on an upper surface of the second N+-type gallium oxide substrate, to obtain two Schottky diodes.

Abstract: Device and method for immersed synthesis and continuous growth of phosphides under a magnetic field are disclosed in the field of semiconductor material preparation. In particular, device and method for synthesizing and growing semiconductor phosphides by means of immersing phosphorus into a metal melt under the action of a static magnetic field are disclosed. The device includes a furnace body, an injection synthesis system and a static magnetic field generator. The method includes A, heating the crucible to melt the metal and a covering material boron oxide in the crucible; B, immersing red phosphorus into the crucible; C, applying a static magnetic field surrounding the crucible, and adjusting the temperature gradient to start the synthesis; and D, performing crystal growth after completion of the synthesis.

Abstract: The present invention discloses a method for preparing a compound semiconductor crystal by continuous LEC and VGF combination after injection synthesis, including: step A, vacuuming a system for preparing compounds and filling the system with an inert gas; step B, heating to melt the metallic raw material and boron oxide I in a synthesis crucible; step C, heating to melt boron oxide II, and moving the synthesis injection system downwards to move the end of the injection synthesis tube until the metallic raw material in the crucible is synthesized into a first melt; step D, slowly reducing the pressure inside the VGF crucible so that the first melt enters the VGF crucible to form a second melt; etc. In the present invention, the upper part is a VGF growth part and the lower part is a synthesis part; the synthesis part entering the VGF growth part by reverse sucking, while the VGF growth part is configured with a seed crystal rod and an observation system, and also can be subjected to gas control.