Abstract: A method for analysing lattice distortion in a specimen is provided. The method comprises, for each of a plurality of target locations in a specimen: obtaining crystal lattice orientation information for the specimen at each of a plurality of perimeter locations along a path corresponding to a perimeter of a region of the specimen that contains the target location; and generating, in accordance with the obtained crystal lattice orientation information, distortion information for the target location within the region, the distortion information being representative of crystal lattice distortion attributable to crystal lattice dislocations within the region. Each region containing one of the plurality of target locations partially overlaps another region, containing a different one of the said target locations. The method further comprises outputting a set of output data comprising the generated distortion information for the plurality of target locations.

Abstract: A method of indexing an electron diffraction pattern comprises obtaining a number of experimental electron diffraction patterns at a low resolution from a sample of material using a detector. A master simulation dataset is loaded into the primary memory of a computer system for each phase of the sample material. A simulated template is generated at the low resolution in the primary memory of the computer by using the master simulation dataset from the primary memory wherein the simulated template represents a simulated electron diffraction pattern for a nominal crystallographic orientation. The simulated template is compared with the experimental electron diffraction pattern so as to generate a corresponding similarity measure which is stored. The process is repeated for all crystallographic orientations using crystallographic orientation intervals, and for each phase and each location on the sample.

Abstract: A method is provided of indexing an electron diffraction pattern obtained from a crystalline sample. Indexing data comprising phase and crystallographic orientation information is obtained for first set of locations on the sample. A second set of locations to be indexed is identified. For each nominal location in the second set an experimental electron diffraction pattern is obtained, together with a simulated template from a number of previously indexed locations in the first set, the previously indexed locations being in a proximal region of the sample to the nominal location. Further simulated templates are generated by modifying the crystallographic orientation for the previously indexed locations at angular sub-intervals. The templates are compared with the experimental pattern for the nominal location and, using a similarity measure, a resultant indexing of the location is produced. A corresponding system is also disclosed.

Abstract: The present invention refers to a method for determining a position of a divergent radiation source (1), comprising Irradiating a pixel detector (2) with a predetermined intensity distribution of radiation with wavelength ? originated from the radiation source (1), wherein the pixel detector (2) comprises a plurality of pixels with pixel coordinates (xi, yi, zi); Detecting, for each of the plurality of pixels, an intensity of the incident radiation (10); Determining, for each of the plurality of pixels, an incidence direction of the incident radiation using information on an orientation of an internal periodic structure at the pixel and the predetermined intensity distribution, wavelength ? and the detected intensity; and Determining the position (xp, yp, zp) of the radiation source (1) using the pixel coordinates (xi, yi, zi) and the incidence direction for each of the plurality of pixels.

Abstract: The present invention refers to a method for determining a position of a divergent radiation source (1), comprising Irradiating a pixel detector (2) with a predetermined intensity distribution of radiation with wavelength ? originated from the radiation source (1), wherein the pixel detector (2) comprises a plurality of pixels with pixel coordinates (xi, yi, zi); Detecting, for each of the plurality of pixels, an intensity of the incident radiation (10); Determining, for each of the plurality of pixels, an incidence direction of the incident radiation using information on an orientation of an internal periodic structure at the pixel and the predetermined intensity distribution, wavelength ? and the detected intensity; and Determining the position (xp, yp, zp) of the radiation source (1) using the pixel coordinates (xi, yi, zi) and the incidence direction for each of the plurality of pixels.

Abstract: The present invention refers to a method for determining a position of a divergent radiation source (1), comprising Irradiating a pixel detector (2) with a predetermined intensity distribution of radiation with wavelength ? originated from the radiation source (1), wherein the pixel detector (2) comprises a plurality of pixels with pixel coordinates (xi, yi, zi); Detecting, for each of the plurality of pixels, an intensity of the incident radiation (10); Determining, for each of the plurality of pixels, an incidence direction of the incident radiation using information on an orientation of an internal periodic structure at the pixel and the predetermined intensity distribution, wavelength ? and the detected intensity; and Determining the position (xp, yp, zp) of the radiation source (1) using the pixel coordinates (xi, yi, zi) and the incidence direction for each of the plurality of pixels.