Abstract: The disclosed and claimed subject matter is directed to an etching composition that includes (A) phosphoric acid and (B) a mixture that includes (i) a silicon-containing compound and (ii) an aqueous solvent. In some embodiments, the etching compositions include additional ingredients. The etching compositions are useful for the selective removal of silicon nitride over silicon oxide from a microelectronic device having such material(s) thereon during its manufacture.

Abstract: The disclosed and claimed subject matter relates to a stripping composition having a controlled oxide etch and ITO (Indium Tin oxide) etch as well as sidewall polymer and polymer etch residue removal capability and to a process for stripping and etching utilizing the composition.

Abstract: The disclosed and claimed subject matter is directed to an etching composition that includes (A) phosphoric acid and (B) a mixture that includes (i) a silicon-containing compound and (ii) an aqueous solvent. In some embodiments, the etching compositions include additional ingredients. The etching compositions are useful for the selective removal of silicon nitride over silicon oxide from a microelectronic device having such material(s) thereon during its manufacture.

Abstract: A microelectronic device (semiconductor substrate) cleaning composition is provided that comprises water; oxalic acid, and two or more corrosion inhibitors and methods of using the same.

Abstract: A microelectronic device (semiconductor substrate) cleaning composition is provided that comprises water; oxalic acid, and two or more corrosion inhibitors and methods of using the same.

Abstract: A composition and method using same useful for etching a semiconductor substrate comprising: from about 25 to 86% by weight of water; from about 0 to about 60% by weight of a water-miscible organic solvent; from about 1 to about 30% by weight of a base comprising a quartenary ammonium compound; from about 1 to about 50% by weight of an amine compound wherein the amine compound is selected from the group consisting of a secondary amine, a tertiary amine, and mixtures thereof; from about 0 to about 5% by weight of a buffering agent; from about 0 to about 15% by weight of a corrosion inhibitor.

Abstract: A photoresist or semiconductor manufacturing residue stripping and cleaning composition comprising water, one or more alkaline compounds, one or more corrosion inhibitors, and one or more oxidized products of one or more antioxidants, the method of making the composition and the method of using the composition.

Abstract: A composition and method using same useful for etching a semiconductor substrate comprising: from about 25 to 86% by weight of water; from about 0 to about 60% by weight of a water-miscible organic solvent; from about 1 to about 30% by weight of a base comprising a quartenary ammonium compound; from about 1 to about 50% by weight of an amine compound wherein the amine compound is selected from the group consisting of a secondary amine, a tertiary amine, and mixtures thereof; from about 0 to about 5% by weight of a buffering agent; from about 0 to about 15% by weight of a corrosion inhibitor.

Abstract: A composition and method for removing copper-containing post-etch and/or post-ash residue from patterned microelectronic devices is described. The removal composition includes water, a water-miscible organic solvent, an amine compound, an organic acid, and a fluoride ion source. The compositions effectively remove the copper-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials.

Abstract: A photoresist or semiconductor manufacturing residue stripping and cleaning composition comprising water, one or more alkaline compounds, one or more corrosion inhibitors, and one or more oxidized products of one or more antioxidants, the method of making the composition and the method of using the composition.

Abstract: Stripping and cleaning compositions suitable for the removal of film resists include about 2-55% by weight of at least one alkanolamine or at least one morpholine or mixtures thereof; about 20-94% by weight of at least one organic solvent; and about 0.5-60% by weight water based on the total weight of the composition.

Abstract: The present invention relates to water-rich formulations and the method using same, to remove bulk photoresists, post-etched and post-ashed residues, residues from Al back-end-of-the-line interconnect structures, as well as contaminations. The formulation comprises: hydroxylamine; corrosion inhibitor containing a mixture of alkyl dihydroxybenzene and hydroxyquinoline; an alkanolamine, a water-soluble solvent or the combination of the two; and at least 50% by weight of water.

Abstract: The invention discloses a voltage source converter and a voltage source converter system. The voltage source converter comprises: a multi-level voltage source converter, being adapted to output a multiple levels of a first voltage at one of two first output terminals through a multiple of first conducting paths; a first energy store; and a first switching element, being arranged to directly connected with the first output terminal, and being adapted to switch the first energy store in or out of the first conducting path so as to combine a level of the voltage of the first energy store with the level of the first voltage as a second voltage output at a second output terminal. By having the topology as above, the voltage class of each of the power semiconductors can be kept lower with the number of the power semiconductors unchanged. Besides, VDRM is lowed as compared to conventional topology. This renders the reduction of the cost and the increase of the liability.

Abstract: A water-rich hydroxylamine formulation for photoresist and post-etch/post-ash residue removal in applications wherein a semiconductor substrate comprises aluminum. The cleaning composition comprises from about 2 to about 15% by wt. of hydroxylamine; from about 50 to about 80% by wt. of water; from about 0.01 to about 5.0% by wt. of a corrosion inhibitor; from about 5 to about 45% by wt. of a component selected from the group consisting of: an alkanolamine having a pKa<9.0, a water-miscible solvent, and a mixture thereof. Employment of such composition exhibits efficient cleaning capability for Al substrates, minimal silicon etch while protecting aluminum for substrates comprising both materials.

Abstract: A composition and method for removing residues such as, without limitation, post etched and/or post ashed photoresist, plasma etching, ashing, and mixtures thereof from a substrate is described herein. In one aspect, there is provided a method for removing residues from a substrate comprising: contacting the substrate with a composition comprising: water; a quaternary ammonium hydroxide compound; a fluoride containing compound; and optionally a corrosion inhibitor wherein the composition is free of an added organic solvent and wherein the composition has a pH greater than 9.

Abstract: A composition and method for removing copper-containing post-etch and/or post-ash residue from patterned microelectronic devices is described. The removal composition includes water, a water-miscible organic solvent, an amine compound, an organic acid, and a fluoride ion source. The compositions effectively remove the copper-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials.

Abstract: Stripping and cleaning compositions suitable for the removal of film resists include about 2-55% by weight of at least one alkanolamine or at least one morpholine or mixtures thereof; about 20-94% by weight of at least one organic solvent; and about 0.5-60% by weight water based on the total weight of the composition.

Abstract: Described herein is a method for removing at least a portion of the carbon-containing species within an organosilicate (OSG) film by treating the OSG film with a chemical, such as but not limited to an oxidizer, exposing the OSG film to an energy source comprising ultraviolet light, or treating the OSG film with a chemical and exposing the OSG film to an energy source.

Abstract: The present invention relates to water-rich formulations and the method using same, to remove bulk photoresists, post-etched and post-ashed residues, residues from Al back-end-of-the-line interconnect structures, as well as contaminations. The formulation comprises: hydroxylamine; corrosion inhibitor containing a mixture of alkyl dihydroxybenzene and hydroxyquinoline; an alkanolamine, a water-soluble solvent or the combination of the two; and at least 50% by weight of water.

Abstract: The present invention relates to water-rich formulations and the method using same, to remove bulk photoresists, post-etched and post-ashed residues, residues from Al back-end-of-the-line interconnect structures, as well as contaminations. The formulation comprises: hydroxylamine; corrosion inhibitor containing a mixture of alkyl dihydroxybenzene and hydroxyquinoline; an alkanolamine, a water-soluble solvent or the combination of the two; and at least 50% by weight of water.