Abstract: A method of singulating a silicon carbide (SiC) semiconductor wafer can include defining a cut within the silicon carbide (SiC) semiconductor wafer by performing a partial dicing operation where the SiC semiconductor wafer is aligned along a plane and the cut has a depth less than a first thickness of the SiC semiconductor wafer. The cut is aligned along a vertical direction orthogonal to the plane such that a portion of the SiC semiconductor wafer has a second thickness that extends between a bottom of the cut and an outer surface of the SiC semiconductor wafer. The method can further include defining a cleave, by performing a cleaving operation, through the portion of the SiC semiconductor wafer having the second thickness. The cleave can be aligned with the cut and extending to the outer surface of the SiC semiconductor wafer.

Abstract: A method of singulating a silicon carbide (SiC) semiconductor wafer can include defining a cut within the silicon carbide (SiC) semiconductor wafer by performing a partial dicing operation where the SiC semiconductor wafer is aligned along a plane and the cut has a depth less than a first thickness of the SiC semiconductor wafer. The cut is aligned along a vertical direction orthogonal to the plane such that a portion of the SiC semiconductor wafer has a second thickness that extends between a bottom of the cut and an outer surface of the SiC semiconductor wafer. The method can further include defining a cleave, by performing a cleaving operation, through the portion of the SiC semiconductor wafer having the second thickness. The cleave can be aligned with the cut and extending to the outer surface of the SiC semiconductor wafer.

Abstract: A method of singulating a silicon carbide (SiC) semiconductor wafer can include defining a cut within the silicon carbide (SiC) semiconductor wafer by performing a partial dicing operation where the SiC semiconductor wafer is aligned along a plane and the cut has a depth less than a first thickness of the SiC semiconductor wafer. The cut is aligned along a vertical direction orthogonal to the plane such that a portion of the SiC semiconductor wafer has a second thickness that extends between a bottom of the cut and an outer surface of the SiC semiconductor wafer. The method can further include defining a cleave, by performing a cleaving operation, through the portion of the SiC semiconductor wafer having the second thickness. The cleave can be aligned with the cut and extending to the outer surface of the SiC semiconductor wafer.

Abstract: In a general aspect, a method for producing a packaged semiconductor device can include coupling a semiconductor device to a leadframe structure having a signal lead that is electrically coupled with the semiconductor device. The method can also include forming, with a laser, a groove in the signal lead, the groove having a first sidewall and a second sidewall, and applying solder plating to the signal lead, including the first sidewall and the second sidewall of the groove. The method can further include separating, at the groove, the signal lead into a first portion and a second portion, such that the second portion of the signal lead is separated from the metal leadframe structure.

Abstract: In a general aspect, a method for producing a packaged semiconductor device can include coupling a semiconductor device to a leadframe structure having a signal lead that is electrically coupled with the semiconductor device. The method can also include forming, with a laser, a groove in the signal lead, the groove having a first sidewall and a second sidewall, and applying solder plating to the signal lead, including the first sidewall and the second sidewall of the groove.

Abstract: In a general aspect, a method for producing a packaged semiconductor device can include coupling a semiconductor device to a leadframe structure having a signal lead that is electrically coupled with the semiconductor device. The method can also include encapsulating at least a portion of the semiconductor device and at least a portion of the leadframe structure in a molding compound. At least a segment of the signal lead can be exposed outside the molding compound. A surface of the molding compound can define a primary plane of the packaged semiconductor device. The method can further include forming, with a laser, a groove in the segment, applying solder plating to the segment, including the groove, and separating, at the groove, the segment into a first portion and a second portion, such that the second portion of the segment is separated from the leadframe structure.

Abstract: A method of singulating a silicon carbide (SiC) semiconductor wafer can include defining a cut within the silicon carbide (SiC) semiconductor wafer by performing a partial dicing operation where the SiC semiconductor wafer is aligned along a plane and the cut has a depth less than a first thickness of the SiC semiconductor wafer. The cut is aligned along a vertical direction orthogonal to the plane such that a portion of the SiC semiconductor wafer has a second thickness that extends between a bottom of the cut and an outer surface of the SiC semiconductor wafer. The method can further include defining a cleave, by performing a cleaving operation, through the portion of the SiC semiconductor wafer having the second thickness. The cleave can be aligned with the cut and extending to the outer surface of the SiC semiconductor wafer.

Abstract: In a general aspect, a method for producing a packaged semiconductor device can include coupling a semiconductor device to a leadframe structure having a signal lead that is electrically coupled with the semiconductor device. The method can also include encapsulating at least a portion of the semiconductor device and at least a portion of the leadframe structure in a molding compound. At least a segment of the signal lead can be exposed outside the molding compound. A surface of the molding compound can define a primary plane of the packaged semiconductor device. The method can further include forming, with a laser, a groove in the segment, applying solder plating to the segment, including the groove, and separating, at the groove, the segment into a first portion and a second portion, such that the second portion of the segment is separated from the leadframe structure.

Abstract: In a general aspect, a packaged semiconductor device can include a semiconductor device and a metal leadframe structure having a signal lead that is electrically coupled with the semiconductor device. The device can also include a molding compound encapsulating at least a portion of the metal leadframe structure. At least a portion of the signal lead can be exposed outside the molding compound. The device can further include a solder plating disposed on exposed portions of the metal leadframe structure. In the device, a flank of the signal lead can have a surface area. At first portion of the surface area of the flank can be defined by the solder plating, and a second portion of the surface area of the flank can be defined by exposed metal of the metal leadframe structure. A perimeter of a surface of the exposed metal can have at least one curved edge.

Abstract: In a general aspect, a packaged semiconductor device can include a semiconductor die having at least a first terminal on a first side of the semiconductor die and a second terminal on a second side of the semiconductor die. The device can include a leadframe portion electrically coupled to the first terminal of the semiconductor die and a clip portion electrically coupled to the second terminal of the semiconductor die. The device can include a molding compound. A surface of the leadframe portion and a first surface of the molding compound can define at least a portion of a first surface of the device. A surface of the clip portion and a second surface of the molding compound can define at least a portion of a second surface of the device that is parallel to the first surface of the device.

Abstract: In a general aspect, a packaged semiconductor device can include a semiconductor die having at least a first terminal on a first side of the semiconductor die and a second terminal on a second side of the semiconductor die. The device can include a leadframe portion electrically coupled to the first terminal of the semiconductor die and a clip portion electrically coupled to the second terminal of the semiconductor die. The device can include a molding compound. A surface of the leadframe portion and a first surface of the molding compound can define at least a portion of a first surface of the device. A surface of the clip portion and a second surface of the molding compound can define at least a portion of a second surface of the device that is parallel to the first surface of the device.