Patents by Inventor Aixi ZHANG
Aixi ZHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12272551Abstract: Embodiments of the disclosure relate to methods for selectively removing metal material from the top surface and sidewalls of a feature. The metal material which is covered by a flowable polymer material remains unaffected. In some embodiments, the metal material is formed by physical vapor deposition resulting in a relatively thin sidewall thickness. Any metal material remaining on the sidewall after removal of the metal material from the top surface may be etched by an additional etch process. The resulting metal layer at the bottom of the feature facilitates selective metal gapfill of the feature.Type: GrantFiled: May 25, 2022Date of Patent: April 8, 2025Assignee: Applied Materials, Inc.Inventors: Liqi Wu, Feng Q. Liu, Bhaskar Jyoti Bhuyan, James Hugh Connolly, Zhimin Qi, Jie Zhang, Wei Dou, Aixi Zhang, Mark Saly, Jiang Lu, Rongjun Wang, David Thompson, Xianmin Tang
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Patent number: 12272659Abstract: Methods for reducing resistivity of metal gapfill include depositing a conformal layer in an opening of a feature and on a field of a substrate with a first thickness of the conformal layer of approximately 10 microns or less, depositing a non-conformal metal layer directly on the conformal layer at a bottom of the opening and directly on the field using an anisotropic deposition process. A second thickness of the non-conformal metal layer on the field and on the bottom of the feature is approximately 30 microns or greater. And depositing a metal gapfill material in the opening of the feature and on the field where the metal gapfill material completely fills the opening without any voids.Type: GrantFiled: September 14, 2022Date of Patent: April 8, 2025Assignee: APPLIED MATERIALS, INC.Inventors: Yi Xu, Yu Lei, Zhimin Qi, Aixi Zhang, Xianyuan Zhao, Wei Lei, Xingyao Gao, Shirish A. Pethe, Tao Huang, Xiang Chang, Patrick Po-Chun Li, Geraldine Vasquez, Dien-yeh Wu, Rongjun Wang
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Publication number: 20250079199Abstract: A method of selective metal removal via gradient oxidation for a gap-fill includes performing process cycles, each process cycle including placing a wafer having a semiconductor structure thereon into a first processing station, the semiconductor structure including a dielectric layer patterned with a feature formed therein and a seed layer formed on sidewalls and a bottom surface of the feature and a top surface of the dielectric layer, performing a reduction process on the wafer in the first processing station, performing a gradient oxidation process on the wafer in the second processing station, performing a gradient etch process on the wafer in the third processing station, and performing the gradient etch process on the wafer in the fourth processing station, wherein the first, second, third, and fourth processing stations are located in an interior volume of a processing chamber.Type: ApplicationFiled: August 29, 2023Publication date: March 6, 2025Inventors: Shiyu YUE, Sahil Jaykumar PATEL, Yu LEI, Wei LEI, Chih-Hsun HSU, Yi XU, Abulaiti HAIRISHA, Cong TRINH, Yixiong YANG, Ju Hyun OH, Aixi ZHANG, Xingyao GAO, Rongjun WANG
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Publication number: 20250006518Abstract: Embodiments herein relate to a method, semiconductor device structures, and multi-chamber processing system for exposing a semiconductor device structure to an oxidizing plasma to form an oxide layer on at least one electrical connection formed in at least one feature formed within a dielectric layer of the semiconductor device structure, performing an etch process to remove the oxide layer and form an etch recess between a portion of the electrical connection and the dielectric layer At least a portion of the etch recess extends underneath at least a portion of the dielectric layer, and filling the at least one feature and the etch recess with a metal material.Type: ApplicationFiled: June 25, 2024Publication date: January 2, 2025Inventors: Shiyu YUE, Wei LEI, Yu LEI, Ju Hyun OH, Zhimin QI, Sahil Jaykumar PATEL, Yi XU, Aixi ZHANG, Bingqian LIU, Cong TRINH, Xianmin TANG, Hayrensa ABLAT
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Publication number: 20240420947Abstract: A method of pre-cleaning in a semiconductor structure includes performing a plasma pre-treatment process to remove impurities from a surface of a semiconductor structure comprising a metal layer and a dielectric layer, performing a selective etch process to remove molybdenum oxide from a surface of the metal layer, the selective etch process comprising soaking the semiconductor structure in a precursor including molybdenum chloride (MoCl5, MoCl6) at a temperature of between 250° C. and 350° C., and performing a post-treatment process to remove chlorine residues and by-products of the selective etch process on the surface of the semiconductor structure.Type: ApplicationFiled: June 16, 2023Publication date: December 19, 2024Inventors: Shiyu YUE, Jiajie CEN, Sahil Jaykumar PATEL, Zhimin QI, Ju Hyun OH, Aixi ZHANG, Xingyao GAO, Wei LEI, Yi XU, Yu LEI, Tsung-Han YANG, Xiaodong WANG, Xiangjin XIE, Yixiong YANG, Kevin KASHEFI, Rongjun WANG
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Publication number: 20240395614Abstract: A method of metal gapfill including depositing a metal layer on a dielectric layer present on a field and/or in an opening of a feature via plasma enhanced atomic layer deposition utilizing a metal halide precursor and a plasma comprising hydrogen and a noble gas; and depositing a metal gapfill material on the field and in the opening directly over the metal layer, wherein the metal gapfill material completely fills the opening.Type: ApplicationFiled: May 26, 2023Publication date: November 28, 2024Applicants: TOYOTA RESEARCH INSTITUTE, INC., TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Yi XU, Yu LEI, Aixi ZHANG, Bingqian LIU, Zhimin QI, Wei LEI, Rongjun WANG
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Publication number: 20240222192Abstract: Embodiments of the disclosure are directed to methods of removing metal oxide from a substrate surface by exposing the substrate surface to a hydrogen (H2) plasma and pulses of RF. In some embodiments, the substrate surface has at least one feature thereon, the at least one feature defining a trench having a top surface, a bottom surface, and two opposed sidewalls. The hydrogen (H2) plasma and pulses of RF remove substantially all of the metal oxide, e.g., tungsten oxide (WOx), molybdenum oxide (MoOx), or ruthenium oxide (RuOx), from the substrate surface, without damaging the dielectric and/or critical dimension (CD)/profile of the structure. A metal fill can then be selectively deposited in the trench.Type: ApplicationFiled: January 4, 2023Publication date: July 4, 2024Applicant: Applied Materials, Inc.Inventors: Yi Xu, Yu Lei, Zhimin Qi, Aixi Zhang, Xianyuan Zhao
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Publication number: 20240194527Abstract: Methods and apparatus for processing a substrate are provided. In some embodiments, a method includes depositing an amorphous interlayer atop a first layer on a substrate, wherein the first layer is a metal-containing layer, and depositing a metal layer atop the amorphous interlayer.Type: ApplicationFiled: May 16, 2023Publication date: June 13, 2024Inventors: Sahil Jaykumar PATEL, Xianyuan ZHAO, Wei LEI, Aixi ZHANG, Yi XU, Yu LEI
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Publication number: 20240178062Abstract: A method of gap fill may include depositing a sacrificial Si layer in an opening of a feature and on a field of a substrate. In addition, the method may include depositing a metal layer in the opening and on the field, where at least a portion of the sacrificial Si layer is replaced with the metal layer. The method may also include depositing a metal gapfill material in the opening and on the field directly over the metal layer, where the metal gapfill material completely fills the opening.Type: ApplicationFiled: December 16, 2022Publication date: May 30, 2024Inventors: Yi XU, Yu LEI, Aixi ZHANG, Rongjun WANG
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Publication number: 20240087955Abstract: A method and apparatus for forming tungsten features in semiconductor devices is provided. The method includes exposing a top opening of a feature formed in a substrate to a physical vapor deposition (PVD) process to deposit a tungsten liner layer within the feature. The PVD process is performed in a first processing region of a first processing chamber and the tungsten liner layer forms an overhang portion, which partially obstructs the top opening of the feature. The substrate is transferred from the first processing region of the first processing chamber to a second processing region of a second processing chamber without breaking vacuum. The overhang portion is exposed to nitrogen-containing radicals in the second processing region to inhibit subsequent growth of tungsten along the overhang portion. The feature is exposed to a tungsten-containing precursor gas to form a tungsten fill layer over the tungsten liner layer within the feature.Type: ApplicationFiled: September 1, 2023Publication date: March 14, 2024Inventors: Yi XU, Xianyuan ZHAO, Zhimin QI, Aixi ZHANG, Geraldine VASQUEZ, Dien-Yeh WU, Wei LEI, Xingyao GAO, Shirish PETHE, Wenting HOU, Chao DU, Tsung-Han YANG, Kyoung-Ho BU, Chen-Han LIN, Jallepally RAVI, Yu LEI, Rongjun WANG, Xianmin TANG
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Publication number: 20240088071Abstract: Methods for reducing resistivity of metal gapfill include depositing a conformal layer in an opening of a feature and on a field of a substrate with a first thickness of the conformal layer of approximately 10 microns or less, depositing a non-conformal metal layer directly on the conformal layer at a bottom of the opening and directly on the field using an anisotropic deposition process. A second thickness of the non-conformal metal layer on the field and on the bottom of the feature is approximately 30 microns or greater. And depositing a metal gapfill material in the opening of the feature and on the field where the metal gapfill material completely fills the opening without any voids.Type: ApplicationFiled: September 14, 2022Publication date: March 14, 2024Inventors: Yi XU, Yu LEI, Zhimin QI, Aixi ZHANG, Xianyuan ZHAO, Wei LEI, Xingyao GAO, Shirish A. PETHE, Tao HUANG, Xiang CHANG, Patrick Po-Chun LI, Geraldine VASQUEZ, Dien-yeh WU, Rongjun WANG
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Publication number: 20240018648Abstract: Embodiments of a purge ring for use in a process chamber are provided herein. In some embodiments, a purge ring includes: an annular body having an inner portion and an outer portion, wherein the inner portion includes an inner surface of the annular body, the inner surface comprising a first inner sidewall, a second inner sidewall, and a third inner sidewall, wherein the inner portion has an upper inner notch that defines the first inner sidewall and a lower inner notch that defines the second inner sidewall, wherein a third inner sidewall is disposed between the first inner sidewall and the second inner sidewall, and wherein the first inner sidewall and the second inner sidewall are disposed radially outward of the third inner sidewall.Type: ApplicationFiled: July 11, 2023Publication date: January 18, 2024Inventors: Geraldine VASQUEZ, Yi XU, Dien-yeh WU, Aixi ZHANG, Jallepally RAVI, Yu LEI
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Publication number: 20240014072Abstract: A method of forming a semiconductor device structure includes forming a nucleation layer within at least one feature. The method includes exposing the nucleation layer to a nitrogen plasma treatment. The nitrogen plasma treatment preferentially treats the top field and sidewalls while leaving the bottom surface substantially untreated to encourage bottom up metal growth.Type: ApplicationFiled: June 21, 2023Publication date: January 11, 2024Inventors: Tsung-Han YANG, Zhimin QI, Yongqian GAO, Rongjun WANG, Yi XU, Yu LEI, Xingyao GAO, Chih-Hsun HSU, Xi CEN, Wei LEI, Shiyu YUE, Aixi ZHANG, Kai WU, Xianmin TANG
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Publication number: 20230420295Abstract: A method and apparatus for tungsten gap-fill in semiconductor devices are provided. The method includes performing a gradient oxidation process to oxidize exposed portions of a liner layer, wherein the gradient oxidation process preferentially oxidizes an overhang portion of the liner layer, which obstructs or blocks top openings of one or more features formed within a field region of a substrate. The method further includes performing an etchback process to remove or reduce the oxidized overhang portion of the liner layer, exposing the liner layer to a chemical vapor transport (CVT) process to remove metal oxide remaining from the gradient oxidation process and the etchback process, and performing a tungsten gap-fill process to fill or partially fill the one or more features.Type: ApplicationFiled: April 11, 2023Publication date: December 28, 2023Inventors: Tsung-Han YANG, Xingyao GAO, Shiyu YUE, Chih-Hsun HSU, Shirish PETHE, Rongjun WANG, Yi XU, Wei LEI, Yu LEI, Aixi ZHANG, Xianyuan ZHAO, Zhimin QI, Jiang LU, Xianmin TANG
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Publication number: 20230386833Abstract: Embodiments of the disclosure relate to methods for selectively removing metal material from the top surface and sidewalls of a feature. The metal material which is covered by a flowable polymer material remains unaffected. In some embodiments, the metal material is formed by physical vapor deposition resulting in a relatively thin sidewall thickness. Any metal material remaining on the sidewall after removal of the metal material from the top surface may be etched by an additional etch process. The resulting metal layer at the bottom of the feature facilitates selective metal gapfill of the feature.Type: ApplicationFiled: May 25, 2022Publication date: November 30, 2023Applicant: Applied Materials, Inc.Inventors: Liqi Wu, Feng Q. Liu, Bhaskar Jyoti Bhuyan, James Hugh Connolly, Zhimin Qi, Jie Zhang, Wei Dou, Aixi Zhang, Mark Saly, Jiang Lu, Rongjun Wang, David Thompson, Xianmin Tang
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Publication number: 20230343643Abstract: A method and apparatus for a gap-fill in semiconductor devices are provided. The method includes forming a metal seed layer on an exposed surface of the substrate, wherein the substrate has features in the form of trenches or vias formed in a top surface of the substrate, the features having sidewalls and a bottom surface extending between the sidewalls. A gradient oxidation process is performed to oxidize exposed portions of the metal seed layer to form a metal oxide, wherein the gradient oxidation process preferentially oxidizes a field region of the substrate over the bottom surface of the features. An etch back process removes or reduces the oxidized portion of the seed layer. A metal gap-fill process fills or partially fills the features with a gap fill material.Type: ApplicationFiled: July 19, 2022Publication date: October 26, 2023Inventors: Chih-Hsun HSU, Shiyu YUE, Wei LEI, Yi XU, Jiang LU, Yu LEI, Ziye XIONG, Tsung-Han YANG, Zhimin QI, Aixi ZHANG, Jie ZHANG, Liqi WU, Rongjun WANG, Shihchung CHEN, Meng-Shan WU, Chun-Chieh WANG, Annamalai LAKSHMANAN, Yixiong YANG, Xianmin TANG
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Publication number: 20230323543Abstract: Embodiments of the disclosure advantageously provide in situ selectively deposited molybdenum films having reduced resistivity and methods of reducing or eliminating lateral growth of a selectively deposited molybdenum layer. Additional embodiments provide integrated clean and deposition processes which improve the selectivity of in situ selectively deposited molybdenum films on features, such as a via. Further embodiments advantageously provide methods of improving uniformity and selectivity of bottom-up gap fill for vias with improved film properties.Type: ApplicationFiled: April 6, 2022Publication date: October 12, 2023Applicant: Applied Materials, Inc.Inventors: Tuerxun Ailihumaer, Yixiong Yang, Annamalai Lakshmanan, Srinivas Gandikota, Yogesh Sharma, Pei Hsuan Lin, Yi Xu, Zhimin Qi, Aixi Zhang, Shiyu Yue, Yu Lei
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Publication number: 20230326791Abstract: Embodiments of methods and associated apparatus for filling a feature in a substrate are provided herein. In some embodiments, a method of depositing tungsten in features of a substrate includes: depositing a seed layer consisting essentially of tungsten in the features via a physical vapor deposition (PVD) process; and depositing a bulk layer consisting essentially of tungsten in the features via a chemical vapor deposition (CVD) process to fill the features such that the deposition of the bulk layer is selective to within the features as compared to a field region of the substrate, wherein the CVD process is performed by flowing hydrogen gas (H2) at a first flow rate and a tungsten precursor at a second flow rate, and wherein the first flow rate is less than the second flow rate.Type: ApplicationFiled: April 11, 2022Publication date: October 12, 2023Inventors: Zhimin QI, Yi XU, Shirish A. PETHE, Xingyao GAO, Shiyu YUE, Aixi ZHANG, Wei LEI, Yu LEI, Geraldine VASQUEZ, Dien-yeh WU, Da HE
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Patent number: 11270126Abstract: A person tracking method, comprising: acquiring N frames in units of time windows; acquiring, in time windows, tracking paths of a target person according to the N frames; and constructing continuous tracking paths by means of continuous time windows, so as to obtain the tracking results of the target person.Type: GrantFiled: September 18, 2018Date of Patent: March 8, 2022Assignees: BEIJING JINGDONG SHANGKE INFORMATION TECHNOLOGY CO., LTD., BEIJING JINGDONG CENTURY TRADING CO., LTD.Inventors: Peiming Zhou, Yun Ye, Aixi Zhang, Junhui Wu, Yu Chen, Zhi Weng
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Patent number: 11263446Abstract: The present disclosure provides a method, system, and terminal device for re-identifying a person in a closed place, relating to the field of video processing technologies. The method comprises: dividing a closed place into a plurality of regions comprising an entrance region, any of the regions comprising at least one camera for photographing; confirming a person first entering based on a trajectory tracking of the person in the entrance area, and assigning a unique identity number to the person, acquiring and recording feature information thereof and binding the identity number with the feature information; and when re-identification of a person in the closed place is performed, matching person's feature information captured by the camera of the region where the person is, with recorded feature information selecting the identity number bound with recorded feature information that best matches the feature information of the person as the identity number of the person.Type: GrantFiled: September 18, 2018Date of Patent: March 1, 2022Assignees: BEIJING JINGDONG SHANGKE INFORMATION TECHNOLOGY CO., LTD., BEIJING JINGDONG CENTURY TRADING CO., LTD.Inventors: Peiming Zhou, Yu Chen, Yun Ye, Aixi Zhang, Junhui Wu, Zhi Weng