Abstract: Provided is a snubber circuit. The snubber circuit may include a first snubber diode connected to a first node connected to a DC-DC converter, a snubber capacitor connected between the first snubber diode and a second node connected to the DC-DC converter, a snubber voltage source connected to the first node, a snubber inductor connected to a third node between the first snubber diode and the snubber capacitor, and a second snubber diode connected between the snubber inductor and the snubber voltage source.

Abstract: The present disclosure relates to a method of controlling a plasma processing apparatus, and a plasma processing apparatus for performing the method. According to one embodiment of the present disclosure, a method of controlling a plasma processing apparatus includes supplying power having a sine wave from a high-frequency power source to a lower electrode to generate a plasma; and supplying power from the high-frequency power source to the lower electrode, to control an ion in the generated plasma, and when a voltage of a wafer disposed on the lower electrode has a negative peak value in a phase region, inputting a negative DC voltage to a focusing ring by a DC power source.