Patents by Inventor Ajay

Ajay has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Gated protection device structures for an electrostatic discharge protection circuit
    Patent number: 12660221
    Abstract: Device structures including a silicon-controlled rectifier and methods of forming a device structure including a silicon-controlled rectifier. The device structure comprises a first well and a second well in a semiconductor substrate, a first terminal including a first doped region in the first well, and a second terminal including a second doped region in the second well. The first well and the second doped region have a first conductivity type, and the second well and the first doped region have a second conductivity type opposite from the first conductivity type. The second well adjoins the first well along an interface. A third doped region includes a first portion in the first well and a second portion in the second well, and a gate structure that overlaps with a portion of the second well.
    Type: Grant
    Filed: September 1, 2022
    Date of Patent: June 16, 2026
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Prantik Mahajan, Ajay, Souvick Mitra, Robert J. Gauthier
  • Silicon-controlled rectifiers with a segmented floating region
    Patent number: 12575189
    Abstract: Structures for a silicon-controlled rectifier and methods of forming same. The structure comprises a first well, a second well, and a third well in a semiconductor substrate. The third well is positioned between the first well and the second well. A first terminal includes a first doped region in the first well, and a second terminal includes a second doped region in the second well. The first well, the second well, and the second doped region have a first conductivity type, and the third well and the first doped region have a second conductivity type opposite to the first conductivity type. The structure further comprises a third doped region in the third well. The third doped region includes a first segment and a second segment, and the first segment is separated from the second segment by a portion of the first well and a portion of the third well.
    Type: Grant
    Filed: September 16, 2022
    Date of Patent: March 10, 2026
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Ajay, Ruchil Kumar Jain, Prantik Mahajan, Alban Zaka
  • Electrostatic discharge protection devices including a silicon-controlled rectifier
    Patent number: 12446322
    Abstract: Structures for an electrostatic discharge device including a silicon-controlled rectifier and methods of forming a structure for an electrostatic discharge device that includes a silicon-controlled rectifier. The structure includes a first well in a semiconductor substrate, a second well and a third well in the first well, and a fourth well in the first well. The first well has a first conductivity type, and the second well and the third well have the first conductivity type. The fourth well positioned in a lateral direction between the second well and the third well, and the fourth well has a second conductivity type opposite to the first conductivity type. The second well, the third well, and the fourth well are positioned in a vertical direction between the first well and a top surface of the semiconductor substrate.
    Type: Grant
    Filed: April 20, 2022
    Date of Patent: October 14, 2025
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Prantik Mahajan, Ajay, Vishal Ganesan, Ruchil Jain, Souvick Mitra
  • SILICON-CONTROLLED RECTIFIERS WITH A SEGMENTED FLOATING REGION
    Publication number: 20240096868
    Abstract: Structures for a silicon-controlled rectifier and methods of forming same. The structure comprises a first well, a second well, and a third well in a semiconductor substrate. The third well is positioned between the first well and the second well. A first terminal includes a first doped region in the first well, and a second terminal includes a second doped region in the second well. The first well, the second well, and the second doped region have a first conductivity type, and the third well and the first doped region have a second conductivity type opposite to the first conductivity type. The structure further comprises a third doped region in the third well. The third doped region includes a first segment and a second segment, and the first segment is separated from the second segment by a portion of the first well and a portion of the third well.
    Type: Application
    Filed: September 16, 2022
    Publication date: March 21, 2024
    Inventors: Ajay, Ruchil Kumar Jain, Prantik Mahajan, Alban Zaka
  • ELECTROSTATIC DISCHARGE PROTECTION DEVICES INCLUDING A SILICON-CONTROLLED RECTIFIER
    Publication number: 20230343778
    Abstract: Structures for an electrostatic discharge device including a silicon-controlled rectifier and methods of forming a structure for an electrostatic discharge device that includes a silicon-controlled rectifier. The structure includes a first well in a semiconductor substrate, a second well and a third well in the first well, and a fourth well in the first well. The first well has a first conductivity type, and the second well and the third well have the first conductivity type. The fourth well positioned in a lateral direction between the second well and the third well, and the fourth well has a second conductivity type opposite to the first conductivity type. The second well, the third well, and the fourth well are positioned in a vertical direction between the first well and a top surface of the semiconductor substrate.
    Type: Application
    Filed: April 20, 2022
    Publication date: October 26, 2023
    Inventors: Prantik Mahajan, Ajay, Vishal Ganesan, Ruchil Jain, Souvick Mitra