Abstract: The present invention provides a true average wide dynamic range (TA-WDR) power sensor that can be used to make accurate power measurements from −70 dBm to +20 dBm or more (wide dynamic range), regardless of the format of the signal (true average). In one preferred embodiment, the present invention provides a true average wide dynamic range power sensor comprising an input for receiving RF signals having wide dynamic power ranges, a first RF path including a low power diode sensor for measuring RF signals having low power ranges, a second RF path including an attenuator high power sensor for measuring RF signals having high power ranges, and a switch for isolating the first RF path when the high power RF signals exceeds the square law region of the diode sensor.

Abstract: The invention provides a true average, wide dynamic range microwave power sensor using a diode-stack-attenuator diode stack technology. The invention provides a diode stack microwave power sensor which includes an RF signals receiver having wide dynamic power ranges; a low power sensor path connected between the receiver and ground for sensing relatively low power RF input signals. The low power sensor path includes one or more stacked RF diodes in which a number of diode pairs may be coupled to ground through respective capacitors. An impedance network including attenuating resistors R1 and R2 are connected in series between the receiver and ground. A high power sensor path is connected in parallel between the attenuating resistors R1 and R2 and ground for sensing attenuated relatively high power RF input signals.