Abstract: Processing methods may be performed to form an airgap spacer on a semiconductor substrate. The methods may include forming a spacer structure including a first material and a second material different from the first material. The methods may include forming a source/drain structure. The source/drain structure may be offset from the second material of the spacer structure by at least one other material. The methods may also include etching the second material from the spacer structure to form the airgap. The source/drain structure may be unexposed to etchant materials during the etching.

Abstract: Processing methods may be performed to form an airgap spacer on a semiconductor substrate. The methods may include forming a spacer structure including a first material and a second material different from the first material. The methods may include forming a source/drain structure. The source/drain structure may be offset from the second material of the spacer structure by at least one other material. The methods may also include etching the second material from the spacer structure to form the airgap. The source/drain structure may be unexposed to etchant materials during the etching.

Abstract: Processing methods may be performed to form an airgap spacer on a semiconductor substrate. The methods may include forming a spacer structure including a first material and a second material different from the first material. The methods may include forming a source/drain structure. The source/drain structure may be offset from the second material of the spacer structure by at least one other material. The methods may also include etching the second material from the spacer structure to form the airgap. The source/drain structure may be unexposed to etchant materials during the etching.

Abstract: Processing methods may be performed to expose a contact region on a semiconductor substrate. The methods may include selectively removing a first region of a silicon material between source/drain regions of a semiconductor substrate to expose a first region of oxide material. The methods may include forming a liner over the first region of oxide material and contacting second regions of the silicon material proximate the source/drain regions of the semiconductor substrate. The methods may also include selectively removing the second regions of the silicon material proximate the source/drain regions of the semiconductor substrate to expose a second region of the oxide material. The methods may further include selectively removing the second region of the oxide material from a surface of a contact in the semiconductor structure.

Abstract: Processing methods may be performed to expose a contact region on a semiconductor substrate. The methods may include selectively removing a first region of a silicon material between source/drain regions of a semiconductor substrate to expose a first region of oxide material. The methods may include forming a liner over the first region of oxide material and contacting second regions of the silicon material proximate the source/drain regions of the semiconductor substrate. The methods may also include selectively removing the second regions of the silicon material proximate the source/drain regions of the semiconductor substrate to expose a second region of the oxide material. The methods may further include selectively removing the second region of the oxide material from a surface of a contact in the semiconductor structure.

Abstract: Processing methods may be performed to form an airgap spacer on a semiconductor substrate. The methods may include forming a spacer structure including a first material and a second material different from the first material. The methods may include forming a source/drain structure. The source/drain structure may be offset from the second material of the spacer structure by at least one other material. The methods may also include etching the second material from the spacer structure to form the airgap. The source/drain structure may be unexposed to etchant materials during the etching.

Abstract: Systems and methods are provided for generating and implementing data auditing functionality supporting multiple database platforms. A database management computer system can engage a shadow audit module to automate and optimize the implementation of data auditing functionality for multiple database platforms that may be utilized by an enterprise application to record data interactions (e.g., insertions, updates, deletions, etc). The shadow audit module may run generated audit SQL code to create an audit trigger in the selected main data tables. Each audit trigger may be a procedure and/or a flag that is stored in the main data table to run or transmit a signal indicating a change may have occurred on the record indicating the required replication of the modification in the shadow audit data table.

Abstract: Processing methods may be performed to expose a contact region on a semiconductor substrate. The methods may include selectively removing a first region of a silicon material between source/drain regions of a semiconductor substrate to expose a first region of oxide material. The methods may include forming a liner over the first region of oxide material and contacting second regions of the silicon material proximate the source/drain regions of the semiconductor substrate. The methods may also include selectively removing the second regions of the silicon material proximate the source/drain regions of the semiconductor substrate to expose a second region of the oxide material. The methods may further include selectively removing the second region of the oxide material from a surface of a contact in the semiconductor structure.

Abstract: Processing methods may be performed to form a sidewall spacer on a semiconductor substrate. The methods may include laterally etching a first silicon-containing material relative to a second silicon-containing material. The first silicon-containing material and the second silicon-containing material may be disposed vertically from one another. The first silicon-containing material may also be positioned vertically between two regions of the second silicon-containing material. The methods may also include forming a spacer within a recess defined by the lateral etching between the two regions of the second silicon-containing material. The methods may further include forming a contact material adjacent to and contacting both the second silicon-containing material and the spacer.

Abstract: A method, computing device and computer program product are provided to establish and maintain resource availability. Methods may include generating a representation of a resource availability schedule including at least one resource entry, where each resource entry includes a resource identification, a date, a location, a start time, and a finish time. Generating the representation may include: dividing the availability for each resource for each date and location into at least one continuous time period of availability, where no continuous time period of availability for a resource is represented by more than one resource entry; and generating a resource entry for each continuous time period. Methods may include: processing a request to schedule a resource, the request including a requested resource identifier, date, start time, finish time, and location; identifying a resource entry corresponding to the request; and modifying the resource entry to remove the time period of the request.

Abstract: Embodiments described herein generally relate to forming a semiconductor structure. In one embodiment, a method of forming a semiconductor structure is formed herein. The method includes exposing an oxide layer of the semiconductor structure, depositing a polysilicon layer on the semiconductor structure, filling a first gap formed by exposing the oxide layer, depositing a hard mask on the polysilicon layer, selectively removing the hard mask and the polysilicon layer, depositing an oxide layer on the semiconductor structure, filling a second gap formed by selectively removing the hard mask and polysilicon layer, exposing the polysilicon layer deposited on the semiconductor structure, selectively removing the polysilicon layer from the first gap, and selectively removing an etch stop layer from a surface of a contact in the semiconductor structure.

Abstract: Systems and methods are provided for generating and implementing data auditing functionality supporting multiple database platforms. A computer system may engage a shadow audit module. The shadow audit module may generate audit code, and run the audit code against a main data table to create a corresponding shadow audit data table. The shadow audit module may also run the generated audit code to create one or more audit triggers that are placed in the main data table and are configured to run when a data modification is made to the main data table. The shadow audit module may replicate the data modification in the shadow audit data table when a data modification is made to the main data table and an audit trigger has run.

Abstract: A method of etching a substrate comprises forming on the substrate, a plurality of double patterning features composed of silicon oxide, silicon nitride, or silicon oxynitride. The substrate having the double patterning features is provided to a process zone. An etching gas comprising nitrogen tri-fluoride, ammonia and hydrogen is energized in a remote chamber. The energized etching gas is introduced into the process zone to etch the double patterning features to form a solid residue on the substrate. The solid residue is sublimated by heating the substrate to a temperature of at least about 100° C.

Abstract: A method of etching a substrate comprises forming on the substrate, a plurality of double patterning features composed of silicon oxide, silicon nitride, or silicon oxynitride. The substrate having the double patterning features is provided to a process zone. An etching gas comprising nitrogen tri-fluoride, ammonia and hydrogen is energized in a remote chamber. The energized etching gas is introduced into the process zone to etch the double patterning features to form a solid residue on the substrate. The solid residue is sublimated by heating the substrate to a temperature of at least about 100° C.

Abstract: The present invention describes a process for converting high free fatty acid containing feed stocks (FFA 20-85%) like palm fatty acid distillate (PFAD), restaurant grease, waste cooking oil, Soya deodistillate, acid oil, jatropha curcas oil, mohua oil etc. to biodiesel, which involves esterification of FFA containing oil with lower alcohols like methanol, ethanol, propanol etc. in presence of macro reticular and gel type acidic heterogenous resin as catalyst to bring down acid value in the range of 1-2 mgKOH/g followed by transesterification in presence of homogeneous basic catalyst metal oxides, hydroxides and alkoxides like sodium hydroxide, potassium hydroxide, sodium methoxide, potassium methoxide etc. and separation of biodiesel and glycerine.

Abstract: A method for forming a pre-metal dielectric (PMD) layer or an inter-metal dielectric (IMD) layer over a substrate includes placing the substrate in a chemical vapor deposition (CVD) process chamber and forming a first oxide layer over the substrate in the CVD process chamber. The first oxide layer is formed using a thermal CVD process at a temperature of about 450° C. or less and a sub-atmospheric pressure. The method also includes forming a second oxide layer over the first oxide layer in the CVD process chamber. The second oxide layer is formed using a plasma enhanced chemical vapor deposition (PECVD) process at a temperature of about 450° C. or less and a sub-atmospheric pressure. The substrate remains in the CVD process chamber during formation of the first oxide layer and the second oxide layer.

Abstract: A plasma cleaning method particularly useful for removing photoresist and oxide residue from a porous low-k dielectric with a high carbon content prior to sputter deposition. A remote plasma source produces a plasma primarily of hydrogen radicals. The hydrogen pressure may be kept relatively low, for example, at 30 milliTorr. Optionally, helium may be added to the processing gas with the hydrogen partial pressure held below 150 milliTorr. Superior results are obtained with 70% helium in 400 milliTorr of hydrogen and helium. Preferably, an ion filter, such as a magnetic filter, removes hydrogen and other ions from the output of the remote plasma source and a supply tube from the remote plasma source includes a removable dielectric liner in combination with dielectric showerhead and manifold liner.

Abstract: Fatty acid alkyl esters suitable for use as biodiesel are produced by a single step esterification of free fatty acids and transesterification of triglycerides from vegetable oils or animal fats or combinations thereof with a lower alcohol (e.g. methanol) in presence of alkyl Tin oxide as catalyst. The ester thus produced is purified by distillation, treatment with an adsorbent, washing with water or combination thereof to give esters suitable for use as biodiesel.

Abstract: A plasma cleaning method particularly useful for removing photoresist and oxide residue from a porous low-k dielectric with a high carbon content prior to sputter deposition. A remote plasma source produces a plasma primarily of hydrogen radicals. The hydrogen pressure may be kept relatively low, for example, at 30 milliTorr. Optionally, helium may be added to the processing gas with the hydrogen partial pressure held below 150 milliTorr. Superior results are obtained with 70% helium in 400 milliTorr of hydrogen and helium. Preferably, an ion filter, such as a magnetic filter, removes hydrogen and other ions from the output of the remote plasma source and a supply tube from the remote plasma source includes a removable dielectric liner in combination with dielectric showerhead and manifold liner.

Abstract: The present invention provides a combination for the treatment of a disease or condition which responds to aromatase inhibition, in particular a proliferative disease, especially a malignant disease such as breast cancer or similar soft tissue endocrine-sensitive cancer, most preferably breast cancer, comprising an aromatase inhibitor and a bisphosphonate for simultaneous, concurrent, separate or sequential use in the prevention of bone loss which is caused by the treatment with an aromatase inhibitor. Also provided is a method of treating a patient suffering from a disease or condition which responds to aromatase inhibition comprising administering to the patient an effective amount of a bisphosphonate and an effective amount of an aromatase inhibitor.