Abstract: A semiconductor device and a manufacturing method therefor are provided. The semiconductor device includes a semiconductor substrate including a trench used for a source/drain region; and a SiGe seed layer formed simultaneously on the sidewall and bottom of the trench, and the SiGe seed layer on the sidewall of the trench has an uneven thickness with a maximum thickness at a location corresponding to the channel region in the semiconductor substrate. The semiconductor device and the manufacturing method therefor according to the present disclosure enable the SiGe seed layer to block diffusion of elements such as boron more effectively.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a plurality of trenches in a semiconductor substrate, on opposite sides of a gate electrode of a P-type metal-oxide-semiconductor (PMOS) disposed on the semiconductor substrate. The method further includes forming an embedded silicon germanium layer inside the trenches, and forming a capping layer on the embedded silicon germanium layer, wherein the embedded silicon germanium layer and the capping layer are doped with boron (B).

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a plurality of trenches in a semiconductor substrate, on opposite sides of a gate electrode of a P-type metal-oxide-semiconductor (PMOS) disposed on the semiconductor substrate. The method further includes forming an embedded silicon germanium layer inside the trenches, and forming a capping layer on the embedded silicon germanium layer, wherein the embedded silicon germanium layer and the capping layer are doped with boron (B).

Abstract: A semiconductor device and a manufacturing method therefor are provided. The semiconductor device includes a semiconductor substrate including a trench used for a source/drain region; and a SiGe seed layer formed simultaneously on the sidewall and bottom of the trench, and the SiGe seed layer on the sidewall of the trench has an uneven thickness with a maximum thickness at a location corresponding to the channel region in the semiconductor substrate. The semiconductor device and the manufacturing method therefor according to the present disclosure enable the SiGe seed layer to block diffusion of elements such as boron more effectively.