Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

Abstract: A remote plasma source is enclosed by a pair of counter electrodes of conical or similar shape that are mirror images of one another and connected across a plasma power source.

Abstract: A remote plasma source is enclosed by a pair of counter electrodes of conical or similar shape that are mirror images of one another and connected across a plasma power source.

Abstract: Electron beam-confining electromagnets of an electron beam generator are aligned with an electron beam axis, each of the electromagnets being folded to define a main section and a pair of angled wing sections disposed at respective angles relative to said main section, and a conductor wound around the edge.

Abstract: Methods and apparatus for regulating the temperature of a component in a plasma-enhanced process chamber are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber and an RF source to provide RF energy to form a plasma in the process chamber. A component is disposed in the process chamber so as to be heated by the plasma when formed. A heater is configured to heat the component and a heat exchanger is configured to remove heat from the component. A chiller is coupled to the heat exchanger via a first flow conduit having an on/off flow control valve disposed therein and a bypass loop to bypass the flow control valve, wherein the bypass loop has a flow ratio valve disposed therein.

Abstract: Methods and apparatus for controlling a plasma are provided herein. In some embodiments, a method may include supplying a first RF signal having a first frequency and a first period from an RF power source to a first electrode, wherein the first period is a first integer number of first cycles at the first frequency; supplying a second RF signal having a second frequency and a second period from the RF power source to the first electrode, wherein the second period is a second integer number of second cycles at the second frequency and wherein a first multiplicative product of the first frequency and the first integer number is equal to a second multiplicative product of the second frequency and the second integer number; and controlling the phase between the first and second periods to control an ion energy distribution of the plasma formed in a process chamber.

Abstract: Embodiments of the present invention provide apparatus and methods for reducing non-uniformity and/or skews during substrate processing. One embodiment of the present invention provides a flow equalizer assembly for disposing between a vacuum port and a processing volume in a processing chamber. The flow equalizing assembly includes a first plate having at least one first opening, and a second plate having two or more second openings. The first and second plates define a flow redistributing volume therebetween, and the at least one first opening and the two or more second openings are staggered.

Abstract: Methods and apparatus for regulating the temperature of a component in a plasma-enhanced process chamber are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber and an RF source to provide RF energy to form a plasma in the process chamber. A component is disposed in the process chamber so as to be heated by the plasma when formed. A heater is configured to heat the component and a heat exchanger is configured to remove heat from the component. A chiller is coupled to the heat exchanger via a first flow conduit having an on/off flow control valve disposed therein and a bypass loop to bypass the flow control valve, wherein the bypass loop has a flow ratio valve disposed therein.

Abstract: A plasma reactor employs an e-beam source to generate plasma, and the e-beam source has a configurable magnetic shield.

Abstract: Embodiments of the present disclosure generally provide various apparatus and methods for reducing particles in a semiconductor processing chamber. One embodiment of present disclosure provides a vacuum screen assembly disposed over a vacuum port to prevent particles generated by the vacuum pump from entering substrate processing regions. Another embodiment of the present disclosure provides a perforated chamber liner around a processing region of the substrate. Another embodiment of the present disclosure provides a gas distributing chamber liner for distributing a cleaning gas around the substrate support under the substrate supporting surface.

Abstract: Electron beam-confining electromagnets of an electron beam generator are aligned with an electron beam axis, each of the electromagnets being folded to define a main section and a pair of angled wing sections disposed at respective angles relative to said main section, and a conductor wound around the edge.

Abstract: A plasma reactor for processing a workplace includes a reactor chamber having a ceiling and a sidewali and a workplace support facing the ceiling and defining a processing region, and a pair of concentric independently excited RF coil antennas overlying the ceiling and a side RF coil concentric with the side wall and facing the side wall below the ceiling, and being excited independently.

Abstract: A plasma reactor enclosure has a metallic portion and a dielectric portion of plural dielectric windows supported on the metallic portion, each of the dielectric windows extending around an axis of symmetry. Plural concentric coil antennas are disposed on an external side of the enclosure, respective ones of the coil antennas facing respective ones of the dielectric windows.

Abstract: A plasma reactor has an overhead multiple coil inductive plasma source with symmetric RF feeds and a symmetrical chamber exhaust with plural struts through the exhaust region providing access to a confined workplace support. A grid may be included for masking spatial effects of the struts from the processing region.

Abstract: A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.

Abstract: A plasma reactor employs an e-beam source to generate plasma, and the e-beam source has a configurable magnetic shield.

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

Abstract: A tunable gas flow equalizer is described. In an embodiment, the tunable flow equalizer includes a gas flow equalizer plate having primary opening and a secondary opening. The primary opening may surround a substrate support, and the secondary opening may be configured with a tuner. In an embodiment, the substrate support may be vertically adjustable with respect to the gas flow equalizer plate. The flow uniformity may be fine tuned by adjusting a tuner configured with a secondary opening in the gas flow equalizer plate and/or by adjusting the height of a vertically positionable substrate support plate having an inwardly tapered skirt 528 with respect to the gas flow equalizer plate 520.

Abstract: Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having an inner volume and an exhaust system coupled thereto, wherein the exhaust system includes a plurality of first conduits, each first conduit having an inlet adapted to receive exhaust from the inner volume of the process chamber. A pumping plenum is coupled to each of the plurality of first conduits. The pumping plenum has a pumping port adapted to pump the exhaust from the chamber. The conductance between each inlet of the plurality of first conduits and the pumping port is substantially equivalent.