Abstract: In one implementation, a power converter with over-voltage protection includes a power switch coupled to a power supply through a tank circuit, and a control circuit coupled to a gate of the power switch. The control circuit is configured to turn the power switch OFF based on a current from the tank circuit, thereby providing the over-voltage protection to the power converter. In one implementation, the power converter is a class-E power converter. In one implementation, the control circuit is configured to sense the current from the tank circuit based on a voltage drop across a sense resistor coupled to the power switch.

Abstract: In one implementation, a power converter with over-voltage protection includes a power switch coupled to a power supply through a tank circuit, and a control circuit coupled to a gate of the power switch. The control circuit is configured to turn the power switch OFF based on a current from the tank circuit, thereby providing the over-voltage protection to the power converter. In one implementation, the power converter is a class-E power converter. In one implementation, the control circuit is configured to sense the current from the tank circuit based on a voltage drop across a sense resistor coupled to the power switch.

Abstract: In one implementation, a power converter with over-voltage protection includes a power switch coupled to a power supply through a tank circuit, and a control circuit coupled to a gate of the power switch. The control circuit is configured to turn the power switch OFF based on a current from the tank circuit, thereby providing the over-voltage protection to the power converter. In one implementation, the power converter is a class-E power converter. In one implementation, the control circuit is configured to sense the current from the tank circuit based on a voltage drop across a sense resistor coupled to the power switch.

Abstract: In one implementation, a power converter with over-voltage protection includes a power switch coupled to a power supply through a tank circuit, and a control circuit coupled to a gate of the power switch. The control circuit is configured to turn the power switch OFF based on a current from the tank circuit, thereby providing the over-voltage protection to the power converter. In one implementation, the power converter is a class-E power converter. In one implementation, the control circuit is configured to sense the current from the tank circuit based on a voltage drop across a sense resistor coupled to the power switch.

Abstract: An audio amplifier assembly that includes a semiconductor package having a semiconductor power die tuned for class D amplifier applications and a conductive clip used for low inductance integration into the amplifier circuit.

Abstract: A semiconductor package that includes two semiconductor die each disposed on a respective die pad and a large tracking distance interposed between at least two leads of the package for better creepage characteristics.

Abstract: A switch in an inductive circuit is prevented from avalanche operation when the switch is turned off. By preventing avalanche, the associated EMI is reduced or eliminated. Switch avalanche can be prevented using an active component, such as a transistor, or a passive component, such as a resistor, coupled to the switch gate to control current in the switch gate. By controlling current in the switch gate during turn-off, avalanche operation can be prevented without a significant increase in turn-off energy.

Abstract: A semiconductor package that includes two power semiconductor dies, such as power MOSFET dies, including vertical conduction MOSFETs, arranged in a half-bridge configuration is disclosed. The package may be mounted on a split conductive pad including two isolated die pads, each die pad being electrically connected to the second power electrode of the die that is on it. The split pad may include several conductive leads, including at least one output lead electrically connected to a first electrode of the first semiconductor die on the same side of the die as the control electrode and to the second electrode of the second die located on the opposite side of the second die from the control electrode.

Abstract: A low profile semiconductor device package includes a lead frame with terminal leads and two die pads for receiving at least two semiconductor die that are interconnected to form a circuit. A further low profile semiconductor device package includes a lead frame with two die pads for receiving at least two semiconductor die that are interconnected to form a circuit and also has a reduced height through removal of a mounting tab. An example of such device packages is a package that includes first and second MOSFET die, each connected to a respective die pad. The source of one MOSFET is connected to the drain of the other MOSFET, thereby forming a low profile device package that provides a half-bridge circuit. Other example device packages include different arrangements of two interconnected MOSFET die, two interconnected IGBTs, or a combination of a MOSFET die and a diode.

Abstract: A power module including a power circuit having heat generating power devices including one or more heatsinks not isolated from the power devices by an insulating body.

Abstract: An audio amplifier assembly that includes a semiconductor package having a semiconductor power die tuned for class D amplifier applications and a conductive clip used for low inductance integration into the amplifier circuit.

Abstract: A semiconductor package which includes two power semiconductor die arranged in a half-bridge configuration.

Abstract: A reverse battery protection circuit comprising a first controlled semiconductor switch for providing current to a load and coupled in series with load terminals across which load terminals the load is adapted to be connected and a second controlled semiconductor switch disposed in a series circuit with a free wheeling diode, the series circuit being coupled across the load terminals.

Abstract: An inductive load driven by power MOSFETs, such as in a low voltage motor drive, using synchronous rectification to reduce the voltage drop across a body diode of a power MOSFET. A comparative feed back circuit measures voltage across the power MOSFET to determine when the body diode is conducting, and turns the MOSFET ON during conductive cycles, and OFF to block reverse current. The obtained synchronous rectification function is highly sensitive to current flow, while using a very small number of parts in a configuration that has less complexity.

Abstract: A low profile semiconductor device package includes a lead frame with terminal leads and two die pads for receiving at least two semiconductor die that are interconnected to form a circuit. A further low profile semiconductor device package includes a lead frame with two die pads for receiving at least two semiconductor die that are interconnected to form a circuit and also has a reduced height through removal of a mounting tab. An example of such device packages is a package that includes first and second MOSFET die, each connected to a respective die pad. The source of one MOSFET is connected to the drain of the other MOSFET, thereby forming a low profile device package that provides a half-bridge circuit. Other example device packages include different arrangements of two interconnected MOSFET die, two interconnected IGBTs, or a combination of a MOSFET die and a diode.

Abstract: A semiconductor package that includes two semiconductor die each disposed on a respective die pad and a large tracking distance interposed between at least two leads of the package for better creepage characteristics.

Abstract: A small capacity FET is coupled to a power MOSFET to sense voltage across the power MOSFET for determining current carried through the power MOSFET. The FET is turned on when the power MOSFET is turned on to obtain a sense voltage that is fed to a comparator to determine if the voltage across the power MOSFET exceeds a threshold voltage. The output of the comparator is used to shut off the drive for the power MOSFET if the threshold is exceeded. The voltage across the FET can be used with a temperature sense and knowledge of the FET RDSON to obtain a sense feedback of current through the power MOSFET. The FET is controlled with a delay to turn on after the power MOSFET is turned on, and turns off before the power MOSFET turns off.

Abstract: A semiconductor module has a conductive heat sink base which receives a power semiconductor and a printed circuit board mounted above the heat sink and carrying control circuits for the power semiconductor. A rigid L-shaped terminal connected to one electrode of the power semiconductor is mounted on the base and extends upward and adjacent an edge of the printed circuit board. A Hall sensor is mounted on the printed circuit board and is disposed in and intercepts the magnetic field produced by current in the terminal. Magnetic bodies are mounted on opposite sides of the Hall element to concentrate the magnetic field through the Hall sensor.

Abstract: A reverse battery protection circuit comprising a first controlled semiconductor switch for providing current to a load and coupled in series with load terminals across which load terminals the load is adapted to be connected and a second controlled semiconductor switch disposed in a series circuit with a free wheeling diode, the series circuit being coupled across the load terminals.

Abstract: A liquid cooled electronic device and a method for sealing a liquid cooled electronic device are disclosed. The liquid cooled electronic device has at least one heat generating electronic device suspended in an electrically insulative heat transfer fluid. The heat generating device or devices are electrically connected to at least two electrodes, which pass through and are sealed in electrically insulating portion of a sealed housing that encloses the electrically insulative heat transfer fluid. At least one thermally conductive surface is in direct contact with the electrically insulative heat transfer fluid, and at least one thermally conductive surface is sealed to the remainder of the housing, for example.