Abstract: A pixel structure comprises at least one radiation-sensing element, for generating charges when exposed to radiation. The pixel structure includes a first connection arrangement between the at least one radiation-sensing element and a first source follower. The first connection arrangement has a switchable connection to a first reset voltage. At least one second connection arrangement is between the at least one radiation-sensing element and at least one second source follower. The second connection arrangement has a switchable connection to a second reset voltage. The first and at least one second source followers have a common output. The first and second connection arrangements and source followers are configured to provide each a different offset to the common output.

Abstract: The present invention provides a pixel circuit comprising a pinned photodiode, at least one first transfer gate for electrically connecting the pinned photodiode to at least one storage node and at least one further transfer gate. The at least one further gate can connect the at least one storage node with at least one floating diffusion node. At least one merging switch is included for allowing connection between the at least one floating diffusion node with one or more capacitor nodes, which can accept charge that exceeds the maximum storage capacity of the storage node.

Abstract: The present invention provides a pixel circuit comprising a pinned photodiode, at least one first transfer gate for electrically connecting the pinned photodiode to at least one storage node and at least one further transfer gate. The at least one further gate can connect the at least one storage node with at least one floating diffusion node. At least one merging switch is included for allowing connection between the at least one floating diffusion node with one or more capacitor nodes, which can accept charge that exceeds the maximum storage capacity of the storage node.