Patents by Inventor Ajit Pramond Paranjpe

Ajit Pramond Paranjpe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Approaches for shallow junction formation
    Patent number: 5882991
    Abstract: A method for forming shallow junctions using rapid thermal gas-phase doping (RTGPD). A wafer (26) is placed in a process chamber (14). After evacuating the chamber, a dopant gas combined with a carrier gas is introduced to the chamber (14) while the pressure is increased from a base pressure to on the order of 200-3000 Torr. The gas flow is shut off when the desired elevated pressure is reached. A rapid thermal cycle is then performed using a static gas flow and elevated pressures to create a shallow junction (40).
    Type: Grant
    Filed: September 20, 1996
    Date of Patent: March 16, 1999
    Assignee: Texas Instruments Incorporated
    Inventor: Ajit Pramond Paranjpe