Abstract: Provided are an oxide semiconductor excellent in transparency, mobility, and weatherability, etc., and a semiconductor device having the oxide semiconductor, a p-type semiconductor being realizable in the oxide semiconductor. The oxide semiconductor consists of a composite oxide, which has a crystal structure including a pyrochlore structure, containing at least one or more kinds of elements selected from Nb and Ta, and containing Sn element, and its holes become charge carriers by the condition that Sn4+/(Sn2++Sn4+) which is a ratio of Sn4+ to a total amount of Sn in the composite oxide is 0.124?Sn4+/(Sn2++Sn4+)?0.148.

Abstract: Provided are an oxide semiconductor excellent in transparency, mobility, and weatherability, etc., and a semiconductor device having the oxide semiconductor, a p-type semiconductor being realizable in the oxide semiconductor. The oxide semiconductor consists of a composite oxide, which has a crystal structure including a foordite structure and contains Nb and Sn elements, and its holes become charge carriers by the condition that Sn4+/(Sn2++Sn4+) which is a ratio of Sn4+ to a total amount of Sn in the composite oxide is 0.006?Sn4+/(Sn2++Sn4+)?0.013.

Abstract: Provided are an oxide semiconductor excellent in transparency, mobility, and weatherability, etc., and a semiconductor device having the oxide semiconductor, a p-type semiconductor being realizable in the oxide semiconductor. The oxide semiconductor consists of a composite oxide, which has a crystal structure including a pyrochlore structure, containing at least one or more kinds of elements selected from Nb and Ta, and containing Sn element, and its holes become charge carriers by the condition that Sn4+/(Sn2++Sn4+) which is a ratio of Sn4+ to a total amount of Sn in the composite oxide is 0.124?Sn4+/(Sn2++Sn4+)?0.148.

Abstract: There is provided an oxide semiconductor that is capable of achieving p-type semiconductor properties in the oxide semiconductor and has excellent transparency, mobility and weather resistance. The oxide semiconductor is achieved by an oxide composite having a pyrochlore structure that contains Sn and Nb whose composition ratio Sn/Nb is 0.81?Sn/Nb<1.0. The oxide semiconductor has a wide bandgap of 2.2 eV, indicating that the oxide semiconductor has transparency in a visible spectrum and is a p-type semiconductor with high mobility. When Sn is less than a stoichiometric composition ratio in a composition formula of Sn2Nb2O7, that is, when Sn/Nb<1, p-type semiconductor properties can be achieved by generation of a structural defect V?Sn, and when the composition ratio Sn/Nb is greater than or equal to 0.81, the pyrochlore structure is obtained.